AP4415GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ Fast Switching Characteristic
BVDSS
-35V
RDS(ON)
36mΩ
ID
-24A
G
S
Description
G
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP4415GJ) is
available for low-profile applications.
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-35
V
VGS
Gate-Source Voltage
±25
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-24
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-15
A
-80
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
31.25
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
4
℃/W
110
℃/W
1
200805263
AP4415GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-35
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-16A
-
-
36
mΩ
VGS=-4.5V, ID=-12A
-
-
60
mΩ
VGS=0V, ID=-250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-16A
-
18
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
ID=-16A
-
11
18
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
VDS=-15V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-16A
-
52
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
20
-
ns
tf
Fall Time
RD=0.94Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
990
1580
pF
Coss
Output Capacitance
VDS=-25V
-
220
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
150
-
pF
Min.
Typ.
IS=-16A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-16A, VGS=0V,
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4415GH/J
50
50
-10V
-7.0V
o
T C = 25 C
40
-ID , Drain Current (A)
40
-ID , Drain Current (A)
-10V
-7.0V
T C = 150 o C
-5.0V
30
-4.5V
20
10
-5.0V
-4.5V
30
20
10
V G = -3.0 V
V G = -3.0 V
0
0
0
2
4
6
8
0
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
6
8
Fig 2. Typical Output Characteristics
105
1.6
I D = - 12 A
T C =25 ℃
I D = - 16 A
V G = -10V
1.4
Normalized R DS(ON)
85
RDS(ON) (m Ω)
2
-V DS , Drain-to-Source Voltage (V)
65
1.2
1.0
45
0.8
25
0.6
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
50
100
150
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
Normalized -VGS(th) (V)
7.0
5.3
-IS(A)
0
T j , Junction Temperature ( C)
3.5
T j =150 o C
T j =25 o C
1.8
1.5
1.0
2.01E+08
0.5
0.0
0.0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4415GH/J
f=1.0MHz
10000
I D = - 16 A
V DS = - 24 V
10
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C iss
1000
4
C oss
2
C rss
100
0
0
10
20
30
1
40
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
100us
10
-ID (A)
1ms
10ms
100ms
DC
1
o
T c =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
-V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
D
Millimeters
A
c1
SYMBOLS MIN
D1
NOM
MAX
Original Original
E2
E1
E
A1
B2
F
B1
Original
A
2.10
2.30
2.50
A1
0.60
1.20
1.80
B1
0.40
0.60
0.80
B2
0.60
0.95
1.25
c
c1
0.40
0.50
0.65
0.40
0.55
0.70
D
6.00
6.50
7.00
D1
4.80
5.40
5.90
E1
5.00
5.50
6.00
E2
1.20
1.70
2.20
e
----
2.30
----
F
7.00
---
16.70
1.All Dimensions Are in Millimeters.
c
e
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-251
Part Number
4415GJ
LOGO
YWWSSS
meet Rohs requirement
Package Code
Date Code (YWWSSS)
Y ：Last Digit Of The Year
WW ：Week
SSS ：Sequence
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
E3
E1
B1
F1
e
Millimeters
SYMBOLS
F
2.20
2.63
3.05
F1
0.5
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part Number
Package Code
meet Rohs requirement
4415GH
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
6