DMP2004TK P-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability • • • • Case: SOT523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.002 grams (approximate) Drain SOD523 D Gate Gate Protection Diode Equivalent Circuit Top View ESD PROTECTED Source S G Top View Ordering Information (Note 4) Part Number DMP2004TK-7 Notes: Case SOT523 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information PAB Date Code Key Year 2006 Code T Month Code Jan 1 PAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) YM 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z 2013 A 2014 B 2015 C 2016 D 2017 E Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D DMP2004TK Document number: DS30932 Rev. 5 - 2 1 of 5 www.diodes.com August 2012 © Diodes Incorporated DMP2004TK Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Steady State TA = +25°C TA = +85°C Pulsed Drain Current (Note 6) Symbol VDSS VGSS Value -20 ±8 Units V V ID -430 -310 mA IDM -750 mA Value 150 833 -55 to +150 Units mW °C/W °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.0 ±1.0 V μA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) -0.5 ⎯ -1.0 V RDS (ON) ⎯ 0.7 1.1 1.7 1.1 1.6 2.4 Ω |Yfs| VSD 200 ⎯ ⎯ ⎯ ⎯ -1.4 ms V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS =10V, ID = 0.2A VGS = 0V, IS = -115mA Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 175 30 20 pF pF pF VDS = -16V, VGS = 0V f = 1.0MHz 5. Device mounted on FR-4 PCB. 6. Pulse width ≤10μS, Duty Cycle ≤1% 7. Short duration pulse test used to minimize self-heating effect. DMP2004TK Document number: DS30932 Rev. 5 - 2 2 of 5 www.diodes.com August 2012 © Diodes Incorporated -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) DMP2004TK 0 0 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics -VGS(th), GATE THRESHOLD VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics TA, AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature -ID, DRAIN-SOURCE CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMP2004TK Document number: DS30932 Rev. 5 - 2 -ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Static Drain-Source On-Resistance vs. Drain-Source Current 3 of 5 www.diodes.com August 2012 © Diodes Incorporated DMP2004TK -VDS, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature 150 120 90 60 30 0 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance -ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A B C G H K J DMP2004TK Document number: DS30932 Rev. 5 - 2 M N D L 4 of 5 www.diodes.com SOT523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 ⎯ ⎯ G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0° 8° α ⎯ All Dimensions in mm August 2012 © Diodes Incorporated DMP2004TK Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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