LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR BC856ALT1, BLT1 BC857ALT1, BLT1 BC858ALT1, BLT1 CLT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol BC856 BC857 BC858 Unit Collector–Emitter Voltage V CEO –65 –45 –30 V Collector–Base Voltage V CBO –80 –50 –30 V Emitter–Base Voltage V –5.0 –5.0 –5.0 V –100 –100 –100 mAdc Collector Current — Continuous EBO IC 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 556 mW mW/°C °C/W 300 2.4 417 –55 to +150 mW mW/°C °C/W °C PD R θJA PD R θJA T J , T stg DEVICE MARKING BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F; BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max – 65 – 45 – 30 – 80 – 50 – 30 – 80 – 50 – 30 – 5.0 – 5.0 – 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — – 15 – 4.0 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) BC856 Series BC857 Series BC858 Series Collector–Emitter Breakdown Voltage BC856 Series (IC = –10 µA, VEB = 0) BC857 Series BC858 Series Collector–Base Breakdown Voltage BC856 Series (IC = – 10 µA) BC857 Series BC858 Series Emitter–Base Breakdown Voltage BC856 Series (IE = – 1.0 µA) BC857 Series, BC858 Series Collector Cutoff Current (VCB = – 30 V) (VCB = – 30 V, TA = 150°C) V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO I CBO v v v v nA µA 1.FR–5=1.0 x 0.75 x 0.062in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M5–1/5 LESHAN RADIO COMPANY, LTD. BC856ALT1, BLT1 BC857ALT1, BLT1 BC858ALT1, BLT1, CLT1 ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit h FE — — — 125 220 420 — — — — – 0.6 — 90 150 270 180 290 520 — — – 0.7 – 0.9 — — — — — 250 475 800 – 0.3 – 0.65 — — – 0.75 – 0.82 — fT 100 — — MHz C ob — — 4.5 pF NF –– –– 10 dB ON CHARACTERISTICS DC Current Gain (I C = –10 µA, V CE = –5.0 V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C, (I C = –2.0 mA, V CE = –5.0 V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C Collector–Emitter Saturation Voltage (I C = –10 mA, I B = – 0.5 mA) Collector–Emitter Saturation Voltage (I C = –100 mA, I B = – 5.0 mA) Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) Base–Emitter on Voltage (I C = –2.0 mA, V CE = –5.0 V) Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V) V CE(sat) V BE(sat) V BE(on) V V V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = – 10 mA, V CE = – 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = – 10 V, f = 1.0 MHz) Noise Figure (I C= – 0.2 mA,V CE= – 5.0 Vdc, R S= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz) M5–2/5 LESHAN RADIO COMPANY, LTD. BC856ALT1, BLT1 BC857ALT1, BLT1, BC858ALT1, BLT1, CLT1 BC857/BC858 –1.0 1.5 VCE= –10 V –0.9 T A = 25°C –0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 T A = 25°C V BE(sat) @ I C /I B=10 –0.7 V BE(on) @ V CE = –10 V –0.6 –0.5 –0.4 –0.3 –0.2 0.3 V CE(sat) @ I C /I B = 10 –0.1 0 0.2 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1 T A = 25°C –1.6 –1.2 IC= I C= –50 mA I C= –200 mA –10 mA I C= –100 mA I C= –20 mA –0.4 –1.0 –2.0 –5.0 –10 –20 –50 –100 I C , COLLECTOR CURRENT (mAdc) –2.0 –0.8 –0.5 Figure 2. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE, COLLECTOR– EMITTER VOLTAGE (V) I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain –0.2 1.0 –55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0 –0.02 –0.1 –1.0 –10 –20 –0.2 I B , BASE CURRENT (mA) Figure 3. Collector Saturation Region –1.0 –10 –100 I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient 400 300 C ib 7.0 T A=25°C V, VOLTAGE (VOLTS) 5.0 C ob 3.0 2.0 fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) 10.0 200 V CE =–10V T A = 25°C 100 80 60 40 30 20 1.0 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product M5–3/5 LESHAN RADIO COMPANY, LTD. BC856ALT1, BLT1 BC857ALT1, BLT1, BC858ALT1, BLT1, CLT1 –1.0 T J= 25°C V CE = –5.0V T A = 25°C V, VOLTAGE (VOLTS) –0.8 2.0 1.0 0.5 0.2 –0.2 VCE(sat) @ I C /I B= 10 0 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. DC Current Gain Figure 8. “On” Voltage –1.6 IC = –10 mA –20mA –50mA –100mA –200mA –0.8 –0.4 TJ= 25°C 0 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –1.0 –1.4 –1.8 θ VB for V BE –55°C to 125°C –2.2 –2.6 –3.0 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 I B , BASE CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient 40 C, CAPACITANCE (pF) VBE @VCE= –5.0 V –0.4 –1.0–2.0 –5.0–10–20 –50–100–200 –2.0 –1.2 –0.6 θVB , TEMPERATURE COEFFICIENT (mV/°C) –0.1–0.2 VBE(sat) @ I C/I B= 10 T J= 25°C 20 C ib 10 8.0 6.0 C ob 4.0 2.0 –0.1–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 fT, CURRENT– GAIN – BANDWIDTH PRODUCT T V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) BC856 500 VCE= –5.0 V 200 100 50 20 –1.0 –10 –100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product M5–4/5 LESHAN RADIO COMPANY, LTD. r( t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BC856ALT1, BLT1 BC857ALT1, BLT1, BC858ALT1, BLT1, CLT1 1.0 0.7 0.5 D=0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 SINGLE PULSE 0.07 0.05 Z θJC (t) = r(t) R θJC R θJC = 83.3°C/W MAX Z θJA (t) = r(t) R θJA R θJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) P(pk) t1 t2 0.03 0.02 DUTY CYCLE, D = t 1 /t 2 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k t, TIME (ms) Figure 13. Thermal Response –200 1s 3 ms I C , COLLECTOR CURRENT (mA) –100 TJ= 25°C TA= 25°C –50 BC558 BC557 –10 BC556 –5.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT –2.0 –1.0 –0.5 –10 The safe operating area curves indicate I C –V CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. –30 –45 –65 –100 V CE , COLLECTOR–EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area M5–5/5