ASB ASX201 250 ~ 5000 mhz mmic amplifier Datasheet

ASX201
250 ~ 5000 MHz MMIC Amplifier
Features
Description
 16 dB Gain at 2 GHz
 21 dBm P1dB at 2 GHz
 34.5 dBm Output IP3 at 2 GHz
 MTTF > 100 Years
 Single Supply
The ASX201, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication sys-
ASX201
tems up to 5 GHz. The amplifier is available in a
SOT89 package and passes through the stringent
DC, RF, and reliability tests.
Package Style: SOT89
Typical Performance
(Supply Voltage = +5 V, TA = +25 C, Z0 = 50 )
Parameters
Units
Typical
Frequency
MHz
900
2000
2450
3500
Gain
dB
19.0
16.0
14.0
12.0
 IF (450 MHz)
S11
dB
-13
-15
-15
-14
 LTE
S22
dB
-13
-18
-18
-14
 CDMA
Output IP31)
dBm
34.0
34.5
36.0
34.0
 GSM
Noise Figure
dB
4.0
3.3
3.3
3.2
 PCS
Output P1dB
dBm
20
21
22
20
 WCDMA
Current
mA
66
66
66
66
 WiBro
Device Voltage
V
+4.8
+4.8
+4.8
+4.8
Application Circuit
1) OIP3 measured with two tones at an output power of +5 dBm/tone separated by 1 MHz
 WiMAX
 C-Band (4500 MHz)
Product Specifications
Parameters
 WLAN
Units
Testing Frequency
MHz
Gain
dB
Min
Typ
15.0
16.0
Max
2000
S11
dB
-15
S22
dB
-18
Output IP3
dBm
Noise Figure
dB
33.0
34.5
Output P1dB
dBm
20
21
Current
mA
61
66
Device Voltage
V
3.3
3.5
72
+4.8
Pin Configuration
Absolute Maximum Ratings
Parameters
Rating
Operating Case Temperature
-40 to 85 C
Storage Temperature
-40 to 150 C
Pin No.
Function
+6 V
1
RF IN
+150 C
2
GND
+25 dBm
3
RF OUT / Bias
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50  matched)
1)
1) Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/21
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
Outline Drawing
Part No.
Lot No.
Symbols
A
L
b
b1
C
D
D1
E
E1
e1
H
S
e
ASX201
Pxxxx
Dimensions (In mm)
MIN
NOM
1.40
1.50
0.89
1.04
0.36
0.42
0.41
0.47
0.38
0.40
4.40
4.50
1.40
1.60
3.64
--2.40
2.50
2.90
3.00
0.35
0.40
0.65
0.75
1.40
1.50
Pin No.
Function
1
RF IN
2
GND
3
RF OUT / Bias
MAX
1.60
1.20
0.48
0.53
0.43
4.60
1.75
4.25
2.60
3.10
0.45
0.85
1.60
Mounting Recommendation (In mm)
Note: 1. The number and size of ground via holes in
a circuit board is critical for thermal and RF
grounding considerations.
2. We recommend that the ground via holes
be placed on the bottom of the lead pin 2
and exposed pad of the device for better RF
and thermal performance, as shown in the
drawing at the left side.
ESD Classification & Moisture Sensitivity Level
ESD Classification
HBM
Class 1B
Voltage Level: 550 V
MM
Class A
Voltage Level: 50 V
CAUTION: ESD-sensitive device!
Moisture Sensitivity Level (MSL)
Level 3 at 260 C reflow
2/21
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
IF
450
Magnitude S21 (dB)
21.0
Magnitude S11 (dB)
-18
Magnitude S22 (dB)
-15
Output P1dB (dBm)
20.5
1)
Output IP3 (dBm)
35
450 MHz
Noise Figure (dB)
5.5
+5 V
Device Voltage (V)
+4.8
Current (mA)
66
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C6=1 F
C5=100pF
L1=82 nH
C1=100 pF
RF IN
L3=6.8 nH
L2=33 nH
C2=100 pF
RF OUT
ASX201
C4=7 pF
C3=4 pF
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
5
0
200
-15
-20
300
400
500
600
700
-25
200
300
400
Frequency (MHz)
500
600
700
Frequency (MHz)
5
0
4
Stability Factor
S22 (dB)
-5
-10
3
2
-15
1
-20
200
0
300
400
500
600
700
0
500
3/21
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
LTE
698 ~ 787
Magnitude S21 (dB)
19.5
Magnitude S11 (dB)
-12
Magnitude S22 (dB)
-10
Output P1dB (dBm)
20
1)
698 ~ 787 MHz
+5 V
Output IP3 (dBm)
33.5
Noise Figure (dB)
3.7
Device Voltage (V)
+4.8
Current (mA)
66
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=100 nH
L2=12 nH
RF IN
C2=100 pF
RF OUT
ASX201
C1=3.9 pF
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
5
0
400
-15
-20
500
600
700
800
900
1000
-25
400
500
600
Frequency (MHz)
700
800
900
1000
Frequency (MHz)
5
0
4
Stability Factor
S22 (dB)
-5
-10
-15
-20
400
3
2
1
0
500
600
700
800
900
1000
0
500
4/21
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
Frequency (MHz)
APPLICATION CIRCUIT
CDMA Rx
824 ~ 849
Magnitude S21 (dB)
19.5
Magnitude S11 (dB)
-18
Magnitude S22 (dB)
-13
Output P1dB (dBm)
20
1)
824 ~ 849 MHz
+5 V
Output IP3 (dBm)
34
Noise Figure (dB)
4.0
Device Voltage (V)
+4.8
Current (mA)
66
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=100 nH
L2=12 nH
RF IN
C2=100 pF
RF OUT
ASX201
C1=5 pF
S-parameters & K-factor
25
0
-5
20
-10
S11 (dB)
Gain (dB)
15
10
-15
-20
5
0
600
-25
700
800
900
1000
1100
-30
600
1200
700
800
Frequency (MHz)
900
1000
1100
1200
Frequency (MHz)
5
0
4
Stability Factor
S22 (dB)
-5
-10
-15
-20
600
3
2
1
0
700
800
900
1000
1100
1200
0
500
5/21
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Frequency (MHz)
869 ~ 894
Magnitude S21 (dB)
19.5
Magnitude S11 (dB)
-13
Magnitude S22 (dB)
-13
CDMA Tx
Output P1dB (dBm)
20
869 ~ 894 MHz
Output IP31) (dBm)
34
Noise Figure (dB)
4.0
Device Voltage (V)
+4.8
Current (mA)
66
+5 V
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=100 nH
L2=10 nH
RF IN
C2=100 pF
RF OUT
ASX201
C1=5 pF
S-parameters & K-factor
0
25
20
-5
10
o
-40 c
o
25 c
o
85 c
5
0
600
S11 (dB)
Gain (dB)
15
700
800
900
1000
1100
-10
o
-40 c
o
25 c
o
85 c
-15
1200
-20
600
700
800
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
o
-40 c
o
25 c
o
85 c
-20
-25
600
1000
1100
1200
3
2
1
0
700
800
900
1000
1100
1200
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
6/21
900
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
Gain vs. Temperature
90
24
80
22
70
20
Gain (dB)
Current (mA)
Current vs. Temperature
60
50
40
-60
18
Frequency = 900 MHz
16
-40
-20
0
20
40
60
80
14
-60
100
-40
-20
0
20
40
o
Temperature ( C)
60
80
100
o
Temperature ( C)
Output IP3 vs. Tone Power (Frequency = 900 MHz)
P1dB vs. Temperature
24
45
40
22
Output IP3 (dBm)
P1dB (dBm)
35
20
18
30
25
o
-40 c
o
25 c
o
85 c
20
Frequency = 900 MHz
16
15
14
-60
10
-40
-20
0
20
40
60
80
100
-1
0
1
o
7/21
2
3
4
5
6
7
8
9
10
11
12
13
14
Pout per Tone (dBm)
Temperature ( C)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Frequency (MHz)
890 ~ 960
Magnitude S21 (dB)
19.0
Magnitude S11 (dB)
-13
Magnitude S22 (dB)
-13
GSM
Output P1dB (dBm)
20
890 ~ 960 MHz
Output IP31) (dBm)
34
Noise Figure (dB)
4.0
Device Voltage (V)
+4.8
Current (mA)
66
+5 V
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=100 nH
L2=10 nH
RF IN
C2=100 pF
RF OUT
ASX201
C1=4 pF
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
5
0
600
-15
-20
700
800
900
1000
1100
1200
-25
600
700
800
Frequency (MHz)
900
1000
1100
1200
Frequency (MHz)
5
0
4
Stability Factor
S22 (dB)
-5
-10
-15
-20
600
3
2
1
0
700
800
900
1000
1100
1200
0
500
8/21
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Frequency (MHz)
1750 ~ 1780
Magnitude S21 (dB)
16.5
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-18
PCS Rx
Output P1dB (dBm)
20
1750 ~ 1780 MHz
Output IP31) (dBm)
34
Noise Figure (dB)
3.5
Device Voltage (V)
+4.8
Current (mA)
66
+5 V
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=39 nH
L2=2.7 nH
RF IN
C2=68 pF
RF OUT
ASX201
C1=2.7 pF
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
5
0
1500
-15
-20
1600
1700
1800
1900
-25
1500
2000
1600
1700
Frequency (MHz)
0
5
-5
4
Stability Factor
-10
S22 (dB)
1800
1900
2000
Frequency (MHz)
-15
-20
3
2
1
-25
-30
1500
0
1600
1700
1800
1900
2000
0
500
9/21
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Frequency (MHz)
1840 ~ 1870
Magnitude S21 (dB)
16.0
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-18
PCS Tx
Output P1dB (dBm)
21
1840 ~ 1870 MHz
Output IP31) (dBm)
34.5
Noise Figure (dB)
3.5
Device Voltage (V)
+4.8
Current (mA)
66
+5 V
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=39 nH
L2=2.7 nH
RF IN
C2=68 pF
RF OUT
ASX201
C1=2.2 pF
S-parameters & K-factor
25
0
-5
20
-10
S11 (dB)
Gain (dB)
15
10
-15
-20
5
0
1600
-25
1700
1800
1900
2000
-30
1600
2100
1700
1800
Frequency (MHz)
-5
5
-10
4
Stability Factor
-15
S22 (dB)
1900
2000
2100
Frequency (MHz)
-20
-25
3
2
1
-30
-35
1600
0
1700
1800
1900
2000
2100
0
500
10/21
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Frequency (MHz)
1920 ~ 1980
Magnitude S21 (dB)
16.0
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-18
WCDMA Rx
Output P1dB (dBm)
21
1920 ~ 1980 MHz
Output IP31) (dBm)
34.5
Noise Figure (dB)
3.3
Device Voltage (V)
+4.8
Current (mA)
66
+5 V
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=39 nH
L2=2.2 nH
RF IN
C2=68 pF
RF OUT
ASX201
C1=2.2 pF
S-parameters & K-factor
20
0
-5
15
S11 (dB)
Gain (dB)
-10
10
-15
-20
5
-25
0
1700
1800
1900
2000
2100
2200
-30
1700
1800
1900
Frequency (MHz)
-10
5
-15
4
Stability Factor
-20
S22 (dB)
2000
2100
2200
Frequency (MHz)
-25
-30
3
2
1
-35
-40
1700
0
1800
1900
2000
2100
2200
0
500
11/21
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Frequency (MHz)
2110 ~ 2170
Magnitude S21 (dB)
15.5
Magnitude S11 (dB)
-17
Magnitude S22 (dB)
-18
WCDMA Tx
Output P1dB (dBm)
20.5
2110 ~ 2170 MHz
Output IP31) (dBm)
36
Noise Figure (dB)
3.3
Device Voltage (V)
+4.8
Current (mA)
66
+5 V
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C4=1 F
C3=100pF
L1=39 nH
L2=1.8 nH
RF IN
C2=68 pF
RF OUT
ASX201
C1=2 pF
S-parameters & K-factor
20
0
-5
15
S11 (dB)
Gain (dB)
-10
10
-15
-20
5
-25
0
1900
2000
2100
2200
2300
2400
-30
1900
2000
2100
Frequency (MHz)
2300
2400
5
-10
-15
4
Stability Factor
-20
S22 (dB)
2200
Frequency (MHz)
-25
-30
3
2
1
-35
-40
1900
0
2000
2100
2200
2300
2400
0
500
12/21
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Frequency (MHz)
2300 ~ 2400
Magnitude S21 (dB)
14.5
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-18
WiBro
Output P1dB (dBm)
22
2300 ~ 2400 MHz
Output IP31) (dBm)
36
Noise Figure (dB)
3.3
Device Voltage (V)
+4.8
Current (mA)
66
+5 V
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C5=1 F
C4=100pF
L1=39 nH
C1=56 pF
RF IN
C2=56 pF
RF OUT
ASX201
4 mm
C3=2 pF
S-parameters & K-factor
0
20
-5
15
S11 (dB)
Gain (dB)
-10
10
-15
5
-20
0
1800
2000
2200
2400
2600
2800
-25
1800
3000
2000
2200
Frequency (MHz)
2600
2800
3000
5
-5
-10
4
Stability Factor
-15
S22 (dB)
2400
Frequency (MHz)
-20
-25
3
2
1
-30
-35
1800
0
2000
2200
2400
2600
2800
3000
0
500
13/21
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
Frequency (MHz)
2400 ~ 2500
Magnitude S21 (dB)
14.0
Magnitude S11 (dB)
-15
Magnitude S22 (dB)
-18
WLAN
Output P1dB (dBm)
22
2400 ~ 2500 MHz
Output IP31) (dBm)
36
Noise Figure (dB)
3.3
Device Voltage (V)
+4.8
Current (mA)
66
+5 V
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C5=1 F
C4=100pF
L1=39 nH
C1=56 pF
RF IN
C2=56 pF
RF OUT
ASX201
4 mm
C3=1.8 pF
S-parameters & K-factor
20
0
-5
15
S11 (dB)
Gain (dB)
-10
10
-15
-20
5
-25
0
1800
2000
2200
2400
2600
2800
-30
1800
3000
2000
2200
Frequency (MHz)
0
5
-5
4
Stability Factor
-10
S22 (dB)
2400
2600
2800
3000
Frequency (MHz)
-15
-20
3
2
1
-25
-30
1800
0
2000
2200
2400
2600
2800
3000
0
500
14/21
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
WiMAX
Frequency (MHz)
2500 ~ 2700
Magnitude S21 (dB)
14.0
Magnitude S11 (dB)
-14
Magnitude S22 (dB)
-17
Output P1dB (dBm)
21
Output IP31) (dBm)
37.5
2500 ~ 2700 MHz
Noise Figure (dB)
2.9
+5 V
Device Voltage (V)
+4.8
Current (mA)
66
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C5=1 F
C4=100pF
L1=39 nH
C1=56 pF
RF IN
C2=56 pF
RF OUT
ASX201
3.5 mm
C3=1.5 pF
S-parameters & K-factor
0
20
-5
15
S11 (dB)
Gain (dB)
-10
10
o
-40 c
o
25 c
o
85 c
5
0
2000
2200
2400
2600
2800
3000
-15
o
-40 c
o
25 c
o
85 c
-20
3200
-25
2000
2200
2400
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
o
-40 c
o
25 c
o
85 c
-20
-25
2000
2800
3000
3200
3
2
1
0
2200
2400
2600
2800
3000
3200
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
15/21
2600
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
Gain vs. Temperature
90
20
80
18
70
16
Gain (dB)
Current (mA)
Current vs. Temperature
60
50
40
-60
14
Frequency = 2600 MHz
12
-40
-20
0
20
40
60
80
10
-60
100
-40
-20
0
o
20
40
60
80
100
o
Temperature ( C)
Temperature ( C)
Output IP3 vs. Tone Power (Frequency = 2600 MHz)
P1dB vs. Temperature
26
50
45
24
Output IP3 (dBm)
P1dB (dBm)
40
22
20
35
30
o
-40 c
o
25 c
o
85 c
25
Frequency = 2600 MHz
18
20
16
-60
15
-40
-20
0
20
40
60
80
100
1
2
3
4
o
16/21
5
6
7
8
9
10
11
12
13
14
15
16
Pout per Tone (dBm)
Temperature ( C)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
LTE ACLR – 10 MHz & 20 MHz
-40
ACLR (dBc)
-45
-50
20 MHz BW
-55
-60
10 MHz BW
-65
-70
0
2
4
6
8
Output Power (dBm)
10
12
1) Test Source : LTE_FDD_test model 3.1, BW: 10 MHz & 20 MHz, Test Frequency: 2.6 GHz
LTE ACLR – 20 MHz
2) Test Source : LTE_FDD_test model 3.1, BW: 20 MHz, Test Frequency: 2.6 GHz
17/21
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
WiMAX
Frequency (MHz)
3400 ~ 3600
Magnitude S21 (dB)
12.0
Magnitude S11 (dB)
-12
Magnitude S22 (dB)
-13
Output P1dB (dBm)
20
Output IP31) (dBm)
35
3400 ~ 3600 MHz
Noise Figure (dB)
3.2
+5 V
Device Voltage (V)
+4.8
Current (mA)
66
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
Vcc=5 V
R1=3 
D1=5.6V
Zener Diode
C5=1 F
C4=100pF
L1=22 nH
C1=27 pF
RF IN
C2=27 pF
RF OUT
ASX201
C3=0.75 pF
S-parameters & K-factor
20
0
-5
-10
S11 (dB)
Gain (dB)
15
10
-15
o
-40 c
o
25 c
o
85 c
o
-40 c
o
25 c
o
85 c
5
0
3000
3200
3400
3600
3800
-20
4000
-25
3000
3200
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
o
-40 c
o
25 c
o
85 c
-20
-25
3000
3600
3800
4000
3
2
1
0
3200
3400
3600
3800
4000
0
500
Frequency (MHz)
18/21
3400
Frequency (MHz)
1000
1500
2000
2500
3000
3500
4000
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
Gain vs. Temperature
90
18
80
16
70
14
Gain (dB)
Current (mA)
Current vs. Temperature
60
50
40
-60
12
Frequency = 3500 MHz
10
-40
-20
0
20
40
60
80
8
-60
100
-40
-20
0
o
20
40
60
80
100
o
Temperature ( C)
Temperature ( C)
Output IP3 vs. Tone Power (Frequency = 3500 MHz)
P1dB vs. Temperature
26
50
45
24
40
Output IP3 (dBm)
P1dB (dBm)
22
20
18
Frequency = 3500 MHz
16
14
-60
35
30
o
-40 c
o
25 c
o
85 c
25
20
15
-40
-20
0
20
40
60
80
100
1
2
3
o
19/21
4
5
6
7
8
9
10
11
12
13
14
Pout per Tone (dBm)
Temperature ( C)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
APPLICATION CIRCUIT
C-Band
Frequency (MHz)
4500
Magnitude S21 (dB)
8.9
Magnitude S11 (dB)
-16
Magnitude S22 (dB)
-13
Output P1dB (dBm)
21.5
Output IP31) (dBm)
37
4500 MHz
Noise Figure (dB)
3.4
+5 V
Device Voltage (V)
+4.8
Current (mA)
68
1) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Board Layout (FR4, 40x40 mm2, 0.8T)
Schematic
S-parameters & K-factor
0
15
10
-10
S11 (dB)
Gain (dB)
-5
-15
5
-20
0
4000
4200
4400
4600
4800
5000
-25
4000
4200
4400
4600
4800
5000
Frequency (MHz)
Frequency (MHz)
0
-5
S22 (dB)
-10
-15
-20
-25
4000
4200
4400
4600
4800
5000
Frequency (MHz)
20/21
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
ASX201
250 ~ 5000 MHz MMIC Amplifier
Performance with varying VDEVICE
Gain
(dB)
S11
(dB)
S22
(dB)
OIP31)
(dBm)
P1dB
(dBm)
NF
(dB)
20.0
-21.5
-14.3
35.3
21.0
4.06
19.7
-19.1
-14.4
31.3
18.4
3.63
38
19.2
-16.5
-14.7
27.5
15.5
3.15
+4.8
66
16.4
-27.8
-27.4
35.1
21.3
2.88
+4.5
51
16.2
-26.8
-25.2
31.5
18.8
2.55
+4.2
38
15.9
-24.0
-23.0
27.9
16.1
2.27
+4.8
66
12.3
-14.4
-13.4
35.2
19.6
3.71
+4.5
51
12.2
-14.0
-13.2
30.9
16.4
3.27
+4.2
38
11.8
-13.2
-12.7
27.2
14.3
3.01
VDEVICE
(V)
Current
(mA)
+4.8
66
+4.5
51
+4.2
Freq.
(MHz)
880
1950
3500
1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz.
21/21
ASB Inc.  [email protected]  Tel: +82-42-528-7225
September 2013
Similar pages