Order this document by BC490/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –80 Vdc Collector – Base Voltage VCBO –80 Vdc Emitter – Base Voltage 2 CASE 29–04, STYLE 17 TO–92 (TO–226AA) VEBO –4.0 Vdc Collector Current — Continuous IC –0.5 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watt mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector – Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) V(BR)CEO –80 — — Vdc Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) V(BR)CBO –80 — — Vdc Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) V(BR)EBO –4.0 — — Vdc ICBO — — –100 nAdc 40 60 100 15 — — 140 — — 400 250 — Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = –60 Vdc, IE = 0) ON CHARACTERISTICS* DC Current Gain (IC = –10 mAdc, VCE = –2.0 Vdc) (IC = –100 mAdc, VCE = –2.0 Vdc) hFE BC490 BC490A (IC = –1.0 Adc, VCE = –5.0 Vdc) — 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 BC490,A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Min Max Unit — — –0.25 –0.5 –0.5 — — — –0.9 –1.0 –1.2 — fT — 150 — MHz Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cob — 9.0 — pF Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cib — 110 — pF ON CHARACTERISTICS(1) (Continued) Collector – Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) (IC = –1.0 Adc, IB = –100 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) (IC = –1.0 Adc, IB = –100 mAdc) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. TURN–ON TIME 100 +10 V RB Vin 0 tr = 3.0 ns 5.0 µF +VBB VCC +40 V –1.0 V 5.0 µs TURN–OFF TIME 100 VCC +40 V 100 RL OUTPUT RB Vin 5.0 µF *CS < 6.0 pF 100 RL OUTPUT *CS < 6.0 pF 5.0 µs tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 200 100 VCE = –2.0 V TJ = 25°C 70 TJ = 25°C Cibo 50 C, CAPACITANCE (pF) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) BC490,A 100 70 50 30 20 10 Cobo 30 7.0 20 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT (mA) 5.0 –0.1 –200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current–Gain — Bandwidth Product –50 –100 Figure 3. Capacitance 1.0 k 700 500 ts 300 t, TIME (ns) 200 100 70 50 30 20 td @ VBE(off) = –0.5 V tf VCC = –40 V IC/IB = 10 IB1 = IB2 TJ = 25°C tr 10 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 IC, COLLECTOR CURRENT (mA) –500 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. Switching Time 1.0 0.7 0.5 D = 0.5 0.2 0.1 0.3 0.2 P(pk) t1 0.02 0.1 0.07 0.05 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–469) TJ(pk) – TC = P(pk) ZθJC(t) TJ(pk) – TA = P(pk) ZθJA(t) 0.01 SINGLE PULSE 0.03 SINGLE PULSE ZθJC(t) = r(t) • RθJC ZθJA(t) = r(t) • RθJA 0.02 0.01 1.0 2.0 5.0 10 20 50 100 200 500 t, TIME (ms) 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 5. Thermal Response Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 BC490,A 1.0 100 µs TJ = 25°C –500 0.8 –300 1.0 s –200 V, VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) –1.0 k –700 1.0 ms TC = 25°C TA = 25°C –100 –70 –50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT –30 –20 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 BC490 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) –10 –1.0 VBE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 RθVB, TEMPERATURE COEFFICIENT (mV/°C) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA 0.4 0.2 0 0.05 0.1 0.2 1.0 2.0 10 0.5 5.0 IC, COLLECTOR CURRENT (mA) 20 Figure 8. Collector Saturation Region 200 500 200 500 Figure 7. “On” Voltages Figure 6. Active Region, Safe Operating Area 0.6 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 50 –0.8 –1.2 –1.6 –2.0 RθVB for VBE –2.4 –2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) Figure 9. Base–Emitter Temperature Coefficient 400 hFE , DC CURRENT GAIN TJ = 125°C VCE = –1.0 V 200 25°C –55°C 100 80 60 40 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 IC, COLLECTOR CURRENT (mA) –50 –70 –100 –200 –300 –500 Figure 10. DC Current Gain 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) BC490,A –1.0 TJ = 25°C V, VOLTAGE (VOLTS) –0.8 VBE(sat) @ IC/IB = 10 –0.6 VBE(on) @ VCE = –1.0 V –0.4 –0.2 VCE(sat) @ IC/IB = 10 0 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA) –500 RθVB, TEMPERATURE COEFFICIENT (mV/°C) Figure 11. “On” Voltages –1.0 TJ = 25°C –0.8 –0.6 IC = –10 mA –50 mA –100 mA –250 mA –500 mA –0.4 –0.2 0 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 IB, BASE CURRENT (mA) –10 –20 –50 Figure 12. Collector Saturation Region –0.8 –1.2 –1.6 RθVB for VBE –2.0 –2.4 –2.8 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA) –500 Figure 13. Base–Emitter Temperature Coefficient Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 BC490,A PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 17: PIN 1. COLLECTOR 2. BASE 3. 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