Jing Heng LL4448 Small signal schottky diode Datasheet

R
LL4448
SMALL SIGNAL SWITCHING DIODE
S E M I C O N D U C T O R
FEATURES
MiniMelf
Silicon epitaxial planar diode
Fast switching diode
500mW power dissipation
JF
This diode is also available in the DO-35 case with the type
0.063(1.6)
0.055(1.4)
designation 1N4448
MECHANICAL DATA
0.019(0.48)
0.011(0.28)
0.142(3.6)
0.134(3.4)
Case: MinMELF glass case(SOD- 80)
Weight: Approx. 0.05gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
Average rectified current, Half wave rectification with
Resistive load at TA=25°C and f 50Hz
Non-Repetitive Peack Forward Surge Current @t=1.0s
Power dissipation at TA=25°C
Junction temperature
Storage temperature range
Symbol
Value
Units
VR
VRM
75
100
Volts
Volts
IAV
150
mA
500
500
175
-65 to +175
mA
IFSM
Ptot
TJ
TSTG
mW
C
C
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Min.
Forward voltage
at IF=5mA
at IF=100mA
VF
VF
0.62
Leakage current
at VR=20V
at VR=75V
at VR=20V , TJ=150°C
IR
IR
IR
Junction capacitance at VR=VF=0V
Reverse breakdown voltage tested with 100mA puse
Reverse recovery time from IF=10mA to IR=1mA,
VR=6V, RL=100W
Thermal resistance junction to ambient
Rectification efficiency at f=100MHz, VRF=2V
JINAN JINGHENG ELECTRONICS CO., LTD.
CJ
V(BR)R
Max
V
V
nA
mA
4
pF
mA
V
4
500
JA
Units
0.72
1
25
5
50
100
trr
R
Typ.
ns
K/W
0.45
11-22
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES LL4448
FIG 2: DYNAMIC FORWARD RESISTANCE
VERSUS FORWARD CURRENT
FIG 1-FORWARD CHARACTERISTICS
mA
W
10 3
10 4
TJ=25 C
f=1KHz
10 2
10 3
TJ=100°C
IF
TJ=25°C
rF
10
10 2
1
10
-1
10
-2
1
10
0
1
2V
10 -2
10 -1
1
10 2
10
VF
mA
IF
FIG 3-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
FIG. 4-RELATIVE CAPACITANCE VERSUS
VOLTAGE
mW
1000
1.5
900
TJ=25 C
f=1MHz
800
700
Ptot
Cj(VR)
Cj(0V)
600
1.3
1.1
500
400
0.9
300
200
0.7
100
0
0
100
0
200 C
JINAN JINGHENG ELECTRONICS CO., LTD.
2
4
6
8
10V
VR
TA
11-23
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES LL4448
FIG.5 RECTIFICATION EFFICIENCY MEASUREMENT
CIRCUIT
FIG 6: LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
nA
10 4
5
2
10 3
D.U.T.
5
60W
2nF
VRF=2V
5KW
VO
IR
2
10 2
5
2
10
5
VR=20V
2
1
0
100
200°C
Tj
FIG 7: ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
I
V=tp/T T=1/fp
IFRM
tp
10
IFRM
V=0
T
0.1
0.2
1
0.5
0.1
10 -5
10 -4
10 -3
10 -2
10 -1
1
10S
tp
JINAN JINGHENG ELECTRONICS CO., LTD.
11-24
HTTP://WWW.JINGHENGGROUP.COM
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