R LL4448 SMALL SIGNAL SWITCHING DIODE S E M I C O N D U C T O R FEATURES MiniMelf Silicon epitaxial planar diode Fast switching diode 500mW power dissipation JF This diode is also available in the DO-35 case with the type 0.063(1.6) 0.055(1.4) designation 1N4448 MECHANICAL DATA 0.019(0.48) 0.011(0.28) 0.142(3.6) 0.134(3.4) Case: MinMELF glass case(SOD- 80) Weight: Approx. 0.05gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) DC Blocking Voltage Non-Repetitive Peak Reverse Voltage Average rectified current, Half wave rectification with Resistive load at TA=25°C and f 50Hz Non-Repetitive Peack Forward Surge Current @t=1.0s Power dissipation at TA=25°C Junction temperature Storage temperature range Symbol Value Units VR VRM 75 100 Volts Volts IAV 150 mA 500 500 175 -65 to +175 mA IFSM Ptot TJ TSTG mW C C ELECTRICAL CHARACTERISTICS (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min. Forward voltage at IF=5mA at IF=100mA VF VF 0.62 Leakage current at VR=20V at VR=75V at VR=20V , TJ=150°C IR IR IR Junction capacitance at VR=VF=0V Reverse breakdown voltage tested with 100mA puse Reverse recovery time from IF=10mA to IR=1mA, VR=6V, RL=100W Thermal resistance junction to ambient Rectification efficiency at f=100MHz, VRF=2V JINAN JINGHENG ELECTRONICS CO., LTD. CJ V(BR)R Max V V nA mA 4 pF mA V 4 500 JA Units 0.72 1 25 5 50 100 trr R Typ. ns K/W 0.45 11-22 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES LL4448 FIG 2: DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT FIG 1-FORWARD CHARACTERISTICS mA W 10 3 10 4 TJ=25 C f=1KHz 10 2 10 3 TJ=100°C IF TJ=25°C rF 10 10 2 1 10 -1 10 -2 1 10 0 1 2V 10 -2 10 -1 1 10 2 10 VF mA IF FIG 3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG. 4-RELATIVE CAPACITANCE VERSUS VOLTAGE mW 1000 1.5 900 TJ=25 C f=1MHz 800 700 Ptot Cj(VR) Cj(0V) 600 1.3 1.1 500 400 0.9 300 200 0.7 100 0 0 100 0 200 C JINAN JINGHENG ELECTRONICS CO., LTD. 2 4 6 8 10V VR TA 11-23 HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES LL4448 FIG.5 RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT FIG 6: LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE nA 10 4 5 2 10 3 D.U.T. 5 60W 2nF VRF=2V 5KW VO IR 2 10 2 5 2 10 5 VR=20V 2 1 0 100 200°C Tj FIG 7: ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 I V=tp/T T=1/fp IFRM tp 10 IFRM V=0 T 0.1 0.2 1 0.5 0.1 10 -5 10 -4 10 -3 10 -2 10 -1 1 10S tp JINAN JINGHENG ELECTRONICS CO., LTD. 11-24 HTTP://WWW.JINGHENGGROUP.COM