EIC AB380-C1000G Avalanche glass passivated bridge rectifier Datasheet

AB40 - AB380/C 1000G
AVALANCHE GLASS
PASSIVATED BRIDGE RECTIFIERS
PRV : 100 - 900 Volts
Io : 1.0 Amperes
WOB
0.39 (10.0)
0.31 (7.87)
FEATURES :
0.22 (5.59)
0.18 (4.57)
Glass passivated chip
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
Pb / RoHS Free
+
-
AC
1.00 (25.4)
MIN.
1.10 (27.9)
MIN.
*
*
*
*
*
*
*
*
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
AC
+
AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
AB40AB80- AB125- AB250- AB380C1000G C1000G C1000G C1000G C1000G
UNIT
Maximum Recurrent Peak Reverse Voltage
V RRM
100
200
300
600
900
Maximum RMS Input Voltage R+C -Load
V RMS
40
80
125
250
380
V
V DC
100
200
300
600
900
V
V BO(min.)
150
250
350
700
1000
V
V BO(max.)
600
700
800
1150
1450
V
Maximum DC Blocking Voltage
Minimum Avalanche Breakdown Voltage at 100 µA
Maximum Avalanche Breakdown Voltage at 100 µA
Maximum Average Forward Current For
Free Air Operation at Tc = 45 °C R+L -Load
C -Load
Peak Forward Surge Current Single half sine wave
on rated load (JEDEC Method) at T J = 125 °C
Rating for fusing at T J = 125 °C ( t < 100 ms.)
Maximum Series Resistor C-Load VRMS = ± 10%
Maximum load Capacitance
+ 50%
-10%
Maximum Forward Voltage per Diode at IF = 1.0 A
IF(AV)
1.2
V
A
1.0
IFSM
40
A
2
10
I t
Rt
1.0
2.0
4.0
8.0
12.0
A 2S
Ω
CL
5000
2500
1000
500
200
µF
VF
1.0
V
IR
10
µA
RθJA
TJ
36
Operating Junction Temperature Range
- 50 to + 125
Storage Temperature Range
T STG
- 50 to + 125
°C/W
°C
°C
Maximum Reverse Current at Rated Repetitive
Peak Voltage per Diode
Ta = 25 °C
Typical Thermal Resistance (Note 1)
Notes :
1 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm)
copper Pads.
Page 1 of 2
Rev. 02 : March 25, 2005
FIG.1 - DERATING CURVE
FIG.2 - DERATING CURVE
FOR OUTPUT RECTIFIED CURRENT
AB40 C1000G - AB125 C1000G
FOR OUTPUT RECTIFIED CURRENT
AB250 C1000G - AB380 C1000G
1.2
Resistive or
Inductive load.
1.0
Capacitive Load
0.8
0-10µF
10-100µF
=100µF
0.6
0.4
PC Board
0.2
0.375(9.5mm)
Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
0
0
20
40
60
80
100
120
140
BRIDGE OUTPUT
FULL WAVE RECTIFIED CURRENT
AVERAGE AMPERES
BRIDGE OUTPUT
FULL WAVE RECTIFIED CURRENT
AVERAGE AMPERES
RATING AND CHARACTERISTIC CURVES ( AB40 - AB380/C1000G )
1.2
Resistive or
Inductive load.
1.0
Capacitive Load
0.8
0-10µF
10-100µF
0.6
=100µF
0.4
PC Board
Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
0
20
CASE TEMPERATURE, ( °C)
1
TJ = 25 °C
Pulse Width = 300 ∝s
1 % Duty Cycle
0.01
0.6
0.8
1.0
1.2
1.4
1.6
100
120
140
1.8
T J = 100 °C
1.0
T J = 25 °C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
FIG.5 - MAXIMUM NON-REPETITIVE
PEAK FORWARD CURRENT
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
40
100
CAPACITANCE, pF
PEAK FORWARD
CURRENT, AMPERES
80
10
FORWARD VOLTAGE, VOLTS
30
20
10
60
40
20
10
TJ = 25 °C
f = 1MHz
Vsig = 50mVp-p
6
4
2
0
1
2
4
6
10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
Page 2 of 2
60
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
FORWARD CURRENT, AMPERES
20
10
0.4
40
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
0.1
0.375(9.5mm)
0.2
1
0.1 0.2
0.6 1
2
4 6
10
20 40
100
REVERSE VOLTAGE, VOLTS
Rev. 02 : March 25, 2005
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