Inchange Semiconductor Product Specification BUW11F BUW11AF Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage ;high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter l Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS BUW11F VCBO Collector-base voltage 400 Open base BUW11AF VEBO Emitter-base voltage V 1000 BUW11F Collector-emitter voltage UNIT 850 Open emitter BUW11AF VCEO VALUE V 450 Open collector 9 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2 A IBM Base current-peak 4 A PT Total power dissipation 41 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT 35 K/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient Inchange Semiconductor Product Specification BUW11F BUW11AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUW11F VCEO(SUS) Collector-emitter sustaining voltage MAX IC=0.1A ; IB=0; L=25mH BUW11F VBEsat TYP. UNIT 400 BUW11AF VCEsat MIN V 450 IC=3A; IB=0.6A Collector-emitter saturation voltage BUW11AF IC=2.5A; IB=0.5A BUW11F IC=3A; IB=0.6A BUW11AF IC=2.5A; IB=0.5A Base-emitter saturation voltage 1.5 V 1.4 V ICES Collector cut-off current VCE=Rated VCES; VBE=0 Tj=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=5mA ; VCE=5V 10 35 hFE-2 DC current gain IC=0.5A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time 1.0 μs 4.0 μs 0.8 μs For BUW11F IC=3A ;IB1=-IB2=-0.6A ts Storage time For BUW11AF IC=2.5A ;IB1=-IB2=-0.5A tf Fall time 2 Inchange Semiconductor Product Specification BUW11F BUW11AF Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.30mm) 3