DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 30.0 A IDM Tc = 25°C, pulse width limited by TJM 240 A IAR Tc = 25°C TBD A EAR Tc = 25°C TBD mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5.5 V/ns dv/dt >200 V/ns 550 W 270 W 3.5 W RthJC 0.25 C/W RthJHS 0.53 C/W IS = 0 PDC PDHS Tc = 25°C Derate 4.4W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions VDSS VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 250 µa IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test 2 SG1 4 V ±100 nA 25 250 µA µA 0.06 Ω S +175 -55 Tstg Weight V 175 TJM TL 100 9.7 -55 TJ 1.6mm(0.063 in) from case for 10 s ID25 = 30.0 A RDS(on) ≤ 0.06 Ω PDC = 550 W SG2 SD1 SD2 Features max. 2.5 100 V GATE TJ = 25°C unless otherwise specified typ. = DRAIN Characteristic Values min. VDSS °C °C +175 °C 300 °C 2 g • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages • Optimized for RF and high speed switching • Easy to mount—no insulators needed • High power density DE275-101N30A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 5 RG Ciss Coss 2500 pF 700 pF 145 pF 16 pF 5 ns 5 ns 8 ns 8 ns 94 nC 11 nC 42 nC VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd Source-Drain Diode Ω Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions min. IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% typ. max. 30.0 A 240 A 2.5 V 600 Trr ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE275-101N30A RF Power MOSFET Fig. 1 Fig. 2 Typical Output Characteristics PW = 10µS Typical Transfer Characteristics V D S = 15V ID = 15A 55 100 6-9V 5.5V 5V 4.5V 4V 3.5V 45 80 ID, Drain Currnet (A) ID , Drain Current (A) Top 50 90 70 60 50 40 30 20 40 30 25 20 15 10 10 5 0 0 3 4 5 6 7 8 Bottom 35 0 9 5 Fig. 4 Gate Charge vs. Gate-to-Source Voltage V DS = 50V ID = 15A 14 ID , Drain Currnet (A) Gate-to-Source Voltage (V) 16 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 V D S vs. Capacitance 10000 Capacitance (pF) Ciss Coss 1000 Crss 100 10 20 30 40 50 VDS Voltage (V) 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 Top 60 25 30 Bottom 9V 8V 7V 6V 5.5V 5V 4.5V 4V 3.5V 10 20 30 V DS, Drain-to-Source Voltage Fig. 5 10 20 Extended Typical Output Characteristics 0 90 100 110 120 130 140 150 160 Gate Charge (nC) 0 15 VDS, Drain-to-Source Voltage (V) VGS, Gate-to Source Voltage (volts) Fig. 3 10 70 80 40 50 DE275-101N30A RF Power MOSFET Fig. 6 Package Drawing Source Source Gate Drain Source Source DE275-101N30A RF Power MOSFET 101N30A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 7 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYSRF web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de275-101n30a.html *SYM=POWMOSN .SUBCKT 101N09A 10 20 30 * TERMINALS: D G S * 100 Volt 30 Amp .05 ohm N-Channel Power MOSFET 10-30-2001 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 1.5 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.5N RD 4 1 .05 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .1N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=9.0) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=1100P BV=100 M=.5 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=300P BV=100 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0242 Rev 1 © 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixyscolorado.com