FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2 A, –12 V. Applications • Low gate charge • Battery management • High performance trench technology for extremely low RDS(ON) • Load switch RDS(ON) = 110 mΩ @ VGS = –4.5 V RDS(ON) = 150 mΩ @ VGS = –2.5 V RDS(ON) = 215 mΩ @ VGS = –1.8 V • Compact industry standard SC70-6 surface mount package D D S Pin 1 D SC70-6 D Absolute Maximum Ratings Symbol Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current – Continuous (Note 1a) 5 3 4 Ratings Units –12 V ±8 V –2 A –6 Power Dissipation for Single Operation TJ, TSTG 2 TA=25oC unless otherwise noted – Pulsed PD 6 G Parameter VDSS 1 (Note 1a) 0.75 (Note 1b) 0.48 Operating and Storage Junction Temperature Range W –55 to +150 °C 260 °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient RθJA Note 1b) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .30 FDG330P 7’’ 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDG330P Rev D (W) FDG330P December 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –2.7 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –10 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA ID = –250 µA On Characteristics ID = –250 µA –12 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C 2.3 84 107 145 98 ID(on) On–State Drain Current VGS = –4.5 V, ID = –2.0 A VGS = –2.5 V, ID = –1.7 A VGS = –1.8 V, ID = –1.4 A VGS = –4.5 V, ID = –2.0 A, TJ = 125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –2.0 A VDS = –6.0 V, f = 1.0 MHz V GS = 0 V, –0.4 –0.7 –1.5 V mV/°C 110 150 215 148 –6 mΩ A 6.8 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time 477 pF 186 pF 124 pF (Note 2) VDD = –6.0 V, ID = 1 A, VGS = –4.5 V, RGEN = 6 Ω 10 20 ns 11 20 ns ns td(off) Turn–Off Delay Time 12 22 tf Turn–Off Fall Time 18 32 ns Qg Total Gate Charge 5 7 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –6.0 V, VGS = –4.5 V ID = –2.0 A, 0.8 nC 1.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.62 A (Note 2) –0.7 –0.62 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a.) 170°C/W when mounted on a 1 in2 pad of 2 oz. copper. b.) 260°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDG330P Rev D (W) FDG330P Electrical Characteristics FDG330P Typical Characteristics 6 3 -2.5V -2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=-4.5V -ID, DRAIN CURRENT (A) -3.0V -1.8V 4.5 3 -1.5V 1.5 VGS=-1.5V 2.6 2.2 1.8 -1.8V -2.0V 1.4 -2.5V -4.5V 0.6 0 0 0.5 1 1.5 2 0 2.5 1.5 Figure 1. On-Region Characteristics. 4.5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 0.3 ID = -2.0A VGS = -4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.2 1.1 1 0.9 0.8 0.7 ID = -1A 0.25 0.2 TA = 125oC 0.15 0.1 TA = 25oC 0.05 -50 -25 0 25 50 75 100 125 150 1 2 o 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = -5V o TA = -55 C 4.5 -IS, REVERSE DRAIN CURRENT (A) 6 -ID, DRAIN CURRENT (A) -3.0V 1 25oC 125oC 3 1.5 0 0.5 1 1.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2 VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG330P Rev D (W) FDG330P Typical Characteristics 800 ID = -2A VDS = -4V -6V 5 f = 1 MHz VGS = 0 V 700 -8V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 6 4 3 2 600 CISS 500 400 300 COSS 200 1 100 0 0 2 4 6 CRSS 0 8 0 2 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 8 10 12 10 RDS(ON) LIMIT 100µs 100ms 1s 1 1ms 10ms DC VGS = -4.5V SINGLE PULSE RθJA = 260oC/W 0.1 P(pk), PEAK TRANSIENT POWER (W) 10 TA = 25oC 0.01 0.1 1 10 SINGLE PULSE RθJA = 260°C/W TA = 25°C 8 6 4 2 0 0.01 100 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 6 Figure 8. Capacitance Characteristics. 100 -ID, DRAIN CURRENT (A) 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA o RθJA = 260 C/W 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 0.01 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDG330P Rev D (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4