Kexin H8550 Pnp transistor Datasheet

Transistors
SMD Type
PNP Transistors
H8550
■ Features
1.70
0.1
● Collector Power Dissipation: PC=0.5W
● Collector Current: IC=-1.5A
● Comlementary to H8050
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-40
V
Collector-emitter voltage
VCEO
-25
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-1.5
A
Collector power dissipation
PC
0.5
W
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC= -100μA, IE=0
-40
V
Collector-emitter breakdown voltage
VCEO
IC = -0.1mA, I B=0
-25
V
Emitter-base breakdown voltage
VEBO
IE= -100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -40 V,I E=0
Collector cut-off current
ICEO
VCE= -20V, I B=0
-0.1
μA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
μA
DC current gain
hFE
-0.1
VCE= -1V, I C= -100mA
85
VCE= -1V, I C = -800mA
40
μA
400
Collector-emitter saturation voltage
VCE(sat) IC=-800mA, I B= -80mA
-0.5
V
Base-emitter saturation voltage
VBE(sat) IC=-800mA, I B=-80mA
-1.2
V
Base-emitter on voltage
VBE(on) Ic=-1V,V CE=-10mA
Base-emitter positive favor voltage
VBEF
IB=-1A
output capacitance
Cob
VCB=-10V,I E =0,f=1MHz
Transition frequency
fT
VCE= -10V, I C=-50mA
100
-1
V
-1.55
V
20
pF
MHz
■ Classification of hfe(1)
Type
H8550-B
H8550-C
H8550-D
H8550-D3
Range
85-160
120-200
160-300
300-400
Marking
8550B
8550C
8550D
8550D3
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Transistors
SMD Type
PNP Transistors
H8550
■ Typical Characteristics
-0 .5
-1 000
-0 .4
IB = -2.5mA
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
VCE = -1V
IB = -3.0mA
IB = -2.0mA
-0 .3
IB = -1.5mA
-0 .2
IB = -1.0mA
-0 .1
-1 00
-1 0
IB = -0.5mA
0
-0 .4
-0 .8
-1.2
-1.6
-1
-0 .1
-2 .0
-1
VCE[V], COLLECTOR-EMITTER VOLTAGE
-100
IC = 10 IB
V BE(sat)
-1000
-100
V CE(sat)
-1
VCE = -1V
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
-10000
-10
-0.1
-10
-100
-10
-1
-0 .1
0.0
-1000
-0 .2
-0 .4
-0 .6
-0 .8
-1 .0
-1 .2
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
1000
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
1000
IE = 0
f = 1MHz
100
10
1
-1000
Figure 2. DC current Gain
IC[mA], COLLECTOR CURRENT
Cob [pF], CAPACITANCE
-100
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
-1
-1 0
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
2
-10
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-1 00
VCE = -10V
100
10
1
-1
-1 0
-1 00
-4 00
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
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