DMG3418L N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCEDINFORMATION INFORMATION ADVANCED Product Summary Features V(BR)DSS RDS(ON) max 30V 60mΩ @VGS = 10V 70mΩ @VGS = 4.5V ID TA = +25°C 4A 3A • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description • Qualified to AEC-Q101 standards for High Reliability This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Mechanical Data ideal for high efficiency power management applications. • Case: SOT23 • Applications Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Backlighting • Power Management Functions • DC-DC Converters • Motor Control • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish — Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 • Terminals Connections: See Diagram Below • Weight: 0.008 grams (approximate) Drain D Gate Source Top View S G Top View Internal Schematic Ordering Information (Note 4) Part Number DMG3418L-7 DMG3418L-13 Notes: Compliance Standard Standard Case SOT23 SOT23 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 18G = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) Chengdu A/T Site Date Code Key Year Code Month Code 2012 Z Jan 1 Shanghai A/T Site 2013 A Feb 2 DMG3418L Document number: DS36366 Rev. 3 - 2 Mar 3 2014 B Apr 4 May 5 2015 C Jun 6 1 of 5 www.diodes.com 2016 D Jul 7 Aug 8 2017 E Sep 9 Oct O 2018 F Nov N Dec D March 2014 © Diodes Incorporated DMG3418L Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCEDINFORMATION INFORMATION ADVANCED Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 5) Symbol VDSS VGSS TA = +25°C TA = +70°C Pulsed Drain Current (Note 6) Value 30 ±12 4.0 3.1 15 ID IDM Unit V V A A Thermal Characteristics Characteristic Symbol Value Unit PD 1.4 0.9 W RθJA 90 °C/W TJ, TSTG -55 to +150 °C Total Power Dissipation (Note 5) TA = +25°C TA = +70°C Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 µA VDS = 30V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±12V, VDS = 0V VGS(th) 0.5 ⎯ 1.5 V Drain-Source Breakdown Voltage Test Condition ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Source-Drain Diode Forward Voltage RDS(ON) VSD VDS = VGS, ID = 250µA 60 70 150 mΩ ⎯ 25 30 50 VGS = 10V, ID = 4A VGS = 4.5V, ID = 3A VGS = 2.5V, ID = 2A ⎯ ⎯ 1.2 V VGS = 0V, IS = 2.0A ⎯ ⎯ DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss ⎯ 464.3 ⎯ pF Output Capacitance Coss ⎯ 49.5 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 43.8 ⎯ pF Total Gate Charge Qg ⎯ 5.5 ⎯ Gate-Source Charge Qgs ⎯ 1.1 ⎯ nC Gate-Drain Charge Qgd ⎯ 1.8 ⎯ Turn-On Delay Time tD(on) ⎯ 1.9 ⎯ ns Turn-On Rise Time tr ⎯ 1.6 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 10.3 ⎯ ns tf ⎯ 2.0 ⎯ ns Turn-Off Fall Time Notes: VDS = 15V, VGS = 0V f = 1.0MHz VGS = 4.5V, VDS = 15V, ID = 4A VDD = 15V, VGEN = 10V, RGEN = 3Ω, RL = 3.75Ω 5. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMG3418L Document number: DS36366 Rev. 3 - 2 2 of 5 www.diodes.com March 2014 © Diodes Incorporated DMG3418L 10.0 20 VGS = 10V VDS = 5.0V 18 VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 VGS = 3.5V 6.0 VGS = 3.0V VGS = 2.0V 4.0 VGS = 2.5V 14 12 10 8 TA = 150°C 6 TA = 125°C 4 2.0 TA = 25°C T A = 85°C 2 VGS = 1.5V 0.0 TA = -55°C 0 0 1 2 3 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0.1 VGS = 2.5V VGS = 4.5V VGS = 10V 0.01 1 2 VGS = 10V ID = 6A 1.8 1.6 VGS = 4.5V ID = 3A 1.4 1.2 VGS = 2.5V ID = 2A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMG3418L Document number: DS36366 Rev. 3 - 2 3 of 5 www.diodes.com 4 0.08 VGS = 4.5V 0.07 T A = 150°C 0.06 TA = 125°C 0.05 0.04 TA = 85°C T A = 25°C 0.03 TA = -55°C 0.02 0.01 0 3 5 7 9 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCEDINFORMATION INFORMATION ADVANCED 8.0 0 4 8 12 16 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.1 0.08 VGS = 2.5V ID = 2A 0.06 VGS = 4.5V ID = 3A 0.04 VGS = 10V ID = 6A 0.02 0 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature March 2014 © Diodes Incorporated DMG3418L 16 1.6 1.2 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 20 18 ID = 1mA 0.8 ID = 250µA 0.4 14 12 10 TA = 25°C 8 6 4 2 0 -50 0 1,000 10 75 100 125 150 -25 0 25 50 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature Ciss VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) ADVANCEDINFORMATION INFORMATION ADVANCED 2 100 Coss Crss 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 8 VDS = 15V ID = 4A 6 4 2 f = 1MHz 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 30 0 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 12 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K J M K1 F D G DMG3418L Document number: DS36366 Rev. 3 - 2 L 4 of 5 www.diodes.com March 2014 © Diodes Incorporated DMG3418L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. ADVANCEDINFORMATION INFORMATION ADVANCED Y Z Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E C X E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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