GSI GS74108AX-12 512k x 8 4mb asynchronous sram Datasheet

GS74108ATP/J/X
SOJ, TSOP, FP-BGA
Commercial Temp
Industrial Temp
8, 10, 12 ns
3.3 V VDD
Center VDD and VSS
512K x 8
4Mb Asynchronous SRAM
Features
SOJ 512K x 8-Pin Configuration
• Fast access time: 8, 10, 12 ns
• CMOS low power operation: 120/95/85 mA at minimum
cycle time
• Single 3.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• Package line up
J:
400 mil, 36-pin SOJ package
GJ: RoHS-compliant 400 mil, 36-pin SOJ package
TP: 400 mil, 44-pin TSOP-II package
GP: RoHS-compliant 400 mil, 44-pin TSOP-II package
X: 6 mm x 10 mm FPBGA package
GX: RoHS-compliant 6 mm x 10 mm FPBGA package
• RoHS-compliant packages available
Description
The GS74108A is a high speed CMOS Static RAM organized
as 524,288 words by 8 bits. Static design eliminates the need
for external clocks or timing strobes. The GS74108A operates
on a single 3.3 V power supply and all inputs and outputs are
TTL-compatible. The GS74108A is available in 400 mil SOJ,
400 mil TSOP-II, and 6 mm x 10 mm FPBGA packages.
A4
1
36
NC
A3
2
35
A5
A2
3
34
A6
A1
4
33
A7
A0
5
32
A8
CE
6
31
OE
DQ1
7
30
DQ8
DQ2
8
29
DQ7
VDD
9
28
VSS
VSS
10
27
VDD
DQ3
11
26
DQ6
DQ4
12
25
DQ5
WE
13
24
A9
A17
14
23
A10
A16
15
22
A11
A15
16
21
A12
A14
17
20
A18
A13
18
19
NC
36-pin
400 mil SOJ
FP-BGA 512K x 8 Bump Configuration (Package X)
1
2
3
4
5
6
A
NC
OE
A2
A6
A7
NC
B
DQ1
NC
A1
A5
CE
DQ8
Pin Descriptions
Symbol
Description
A0–A18
Address input
DQ1–DQ8
Data input/output
C
DQ2
NC
A0
A4
NC
DQ7
CE
Chip enable input
D
VSS
NC
A18
A3
NC
VDD
WE
Write enable input
OE
Output enable input
E
VDD
NC
A17
A9
NC
VSS
VDD
+3.3 V power supply
F
DQ3
NC
A13
A10
NC
DQ6
VSS
Ground
G
DQ4
NC
A14
A11
WE
DQ5
NC
No connect
H
NC
A16
A15
A12
A8
NC
6 mm x 10 mm
*All GSI Technology packages are at least 5/6 RoHS compliant.
Packages listed with the additional “G” designator are 6/6 RoHS compliant.
Rev: 1.07 1/2006
1/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.
GS74108ATP/J/X
TSOP-II 512K x 8-Pin Configuration
A13
19
20
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
NC
NC
21
22
24
23
NC
NC
A4
A3
A2
A1
A0
CE
DQ1
DQ2
VDD
VSS
DQ3
DQ4
WE
A17
A16
A15
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
44-pin
400 mil TSOP II
NC
NC
NC
A5
A6
A7
A8
OE
DQ8
DQ7
VSS
VDD
DQ6
DQ5
A9
A10
A11
A12
A18
NC
NC
NC
Block Diagram
A0
Address
Input
Buffer
Row
Decoder
Column
Decoder
A18
CE
WE
OE
Memory Array
I/O Buffer
Control
DQ1
Rev: 1.07 1/2006
DQ8
2/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.
GS74108ATP/J/X
Truth Table
CE
OE
WE
DQ1 to DQ8
VDD Current
H
X
X
Not Selected
ISB1, ISB2
L
L
H
Read
L
X
L
Write
L
H
H
High Z
IDD
Note:
X: “H” or “L”
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
–0.5 to +4.6
V
Input Voltage
VIN
–0.5 to VDD +0.5
(≤ 4.6 V max.)
V
Output Voltage
VOUT
–0.5 to VDD +0.5
(≤ 4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
–55 to 150
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -8/-10/-12
VDD
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
—
VDD +0.3
V
Input Low Voltage
VIL
–0.3
—
0.8
V
Ambient Temperature,
Commercial Range
TAc
0
—
70
o
Ambient Temperature,
Industrial Range
TAI
–40
—
85
o
C
C
Notes:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Rev: 1.07 1/2006
3/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.
GS74108ATP/J/X
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
CIN
VIN = 0 V
5
pF
Output Capacitance
COUT
VOUT = 0 V
7
pF
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
IIL
VIN = 0 to VDD
– 1 uA
1 uA
Output Leakage
Current
ILO
Output High Z
VOUT = 0 to VDD
–1 uA
1 uA
Output High Voltage
VOH
IOH = –4 mA
2.4
—
Output Low Voltage
VOL
ILO = +4 mA
—
0.4 V
Power Supply Currents
Parameter
Symbol
Test Conditions
0 to 70°C
–40 to 85°C
8 ns
10 ns
12 ns
8 ns
10 ns
12 ns
IDD
CE ≤ VIL
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
120 mA
95 mA
85 mA
130 mA
105 mA
95 mA
Standby
Current
ISB1
CE ≥ VIH
All other inputs
≥ VIH or ≤VIL
Min. cycle time
30 mA
25 mA
22 mA
40 mA
35 mA
32 mA
Standby
Current
ISB2
CE ≥ VDD - 0.2V
All other inputs
≥ VDD - 0.2V or ≤ 0.2V
Operating
Supply
Current
Rev: 1.07 1/2006
10 mA
4/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
20 mA
© 2001, Giga Semiconductor, Inc.
GS74108ATP/J/X
AC Test Conditions
Output Load 1
Parameter
Conditions
Input high level
VIH = 2.4 V
Input low level
VIL = 0.4 V
50Ω
Input rise time
tr = 1 V/ns
VT = 1.4 V
Input fall time
tf = 1 V/ns
Input reference level
1.4 V
Output Load 2
Output reference level
1.4 V
3.3 V
Output load
Fig. 1& 2
DQ
589Ω
DQ
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ
30pF1
5pF1
434Ω
AC Characteristics
Read Cycle
Parameter
Symbol
Read cycle time
-8
-10
-12
Unit
Min
Max
Min
Max
Min
Max
tRC
8
—
10
—
12
—
ns
Address access time
tAA
—
8
—
10
—
12
ns
Chip enable access time (CE)
tAC
—
8
—
10
—
12
ns
Output enable to output valid (OE)
tOE
—
3.5
—
4
—
5
ns
Output hold from address change
tOH
3
—
3
—
3
—
ns
Chip enable to output in low Z (CE)
tLZ*
3
—
3
—
3
—
ns
Output enable to output in low Z (OE)
tOLZ*
0
—
0
—
0
—
ns
Chip disable to output in High Z (CE)
tHZ*
—
4
—
5
—
6
ns
Output disable to output in High Z (OE)
tOHZ*
—
3.5
—
4
—
5
ns
* These parameters are sampled and are not 100% tested.
Rev: 1.07 1/2006
5/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.
GS74108ATP/J/X
Read Cycle 1: CE = OE = VIL, WE = VIH
tRC
Address
tAA
tOH
Data Out
Previous Data
Data valid
Read Cycle 2: WE = VIH
tRC
Address
tAA
CE
tAC
tHZ
tLZ
OE
tOE
Data Out
Rev: 1.07 1/2006
tOLZ
High impedance
tOHZ
DATA VALID
6/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.
GS74108ATP/J/X
Write Cycle
Parameter
Symbol
Write cycle time
-8
-10
-12
Unit
Min
Max
Min
Max
Min
Max
tWC
8
—
10
—
12
—
ns
Address valid to end of write
tAW
5.5
—
7
—
8
—
ns
Chip enable to end of write
tCW
5.5
—
7
—
8
—
ns
Data set up time
tDW
4
—
5
—
6
—
ns
Data hold time
tDH
0
—
0
—
0
—
ns
Write pulse width
tWP
5.5
—
7
—
8
—
ns
Address set up time
tAS
0
—
0
—
0
—
ns
Write recovery time (WE)
tWR
0
—
0
—
0
—
ns
Write recovery time (CE)
tWR1
0
—
0
—
0
—
ns
Output Low Z from end of write
tWLZ*
3
—
3
—
3
—
ns
Write to output in High Z
tWHZ*
—
3.5
—
4
—
5
ns
* These parameters are sampled and are not 100% tested.
Write Cycle 1: WE control
tWC
Address
tAW
tWR
OE
tCW
CE
tAS
tWP
WE
tDW
Data In
DATA VALID
tWHZ
Data Out
Rev: 1.07 1/2006
tDH
tWLZ
HIGH IMPEDANCE
7/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.
GS74108ATP/J/X
Write Cycle 2: CE control
tWC
Address
tAW
tWR1
OE
tAS
tCW
CE
tWP
WE
tDW
Data In
tDH
DATA VALID
Data Out
HIGH IMPEDANCE
36-Pin SOJ, 400 mil
Dimension in inch
L
D
e
A
A1
A
A2
1
GE
E
HE
c
y
B
B1
Detail A
Q
Dimension in mm
Symbol
min
nom
max
min
nom
max
A
—
—
0.146
—
—
3.70
A1
0.026
—
—
0.66
—
—
A2
0.105
0.110
0.115
2.67
2.80
2.92
B
0.013
0.017
0.021
0.33
0.43
0.53
B1
0.024
0.028
0.032
0.61
0.71
0.81
c
0.006
0.008
0.012
0.15
0.20
0.30
D
0.920
0.924
0.929
23.37
23.47
23.60
E
0.395
0.400
0.405
10.04
10.16
10.28
e
—
0.05
—
—
1.27
—
HE
0.430
0.435
0.440
10.93
11.05
11.17
GE
0.354
0.366
0.378
9.00
9.30
9.60
L
0.082
—
—
2.08
—
—
y
—
—
0.004
—
—
0.10
Q
0o
—
10o
0o
—
10o
Notes:
1. Dimension D& E do not include interlead flash.
2. Dimension B1 does not include dambar protrusion/intrusion.
Rev: 1.07 1/2006
8/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.
GS74108ATP/J/X
44-Pin, 400 mil TSOP-II
D
HE
A
22
e
B
y
L
L1
A1
A
A2
1
Dimension in inch Dimension in mm
Symbol min nom max min nom max
c
23
E
44
Detail A
Q
A
—
—
0.047
—
—
1.20
A1
0.002
—
—
0.05
—
—
A2
0.037
0.039
0.041
0.95
1.00
1.05
B
0.01
0.014
0.018
0.25
0.35
0.45
c
—
0.006
—
—
0.15
—
D
0.721
0.725
0.729
18.31
18.41
18.51
E
0.396
0.400
0.404
10.06
10.16
10.26
e
—
0.031
—
—
0.80
—
HE
0.455
0.463
0.471
11.56
11.76
11.96
L
0.016
0.020
0.024
0.40
0.50
0.60
L1
—
0.031
—
—
0.80
—
y
—
—
0.004
—
—
0.10
Q
o
—
o
o
—
5o
0
5
0
Notes:
1. Dimension D& E do not include interlead flash.
2. Dimension B does not include dambar protrusion/intrusion.
3. Controlling dimension: mm
Rev: 1.07 1/2006
9/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.
GS74108ATP/J/X
6 mm x 10 mm FPBGA
Symbol
D
E
Pin A1
Index
Top View
A
Unit: mm
A
1.10±0.10
A1
0.20~0.30
fb
f0.30~0.40
c
0.36(TYP)
D
10.0±0.05
D1
5.25
E
6.0±0.05
E1
3.75
e
0.75(TYP)
aaa
0.10
c
A1
Pin A1
Index
Side View
aaa
A B C D E F G H
1
2
3
4
5
6
fb Solder Ball
e
E1
e
D1
Bottom View
Rev: 1.07 1/2006
10/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.
GS74108ATP/J/X
Ordering Information
Part Number1
Package2
Access Time
Temp. Range
Status3
GS74108ATP-8
400 mil TSOP-II
8 ns
Commercial
MP
GS74108ATP-10
400 mil TSOP-II
10 ns
Commercial
MP
GS74108ATP-12
400 mil TSOP-II
12 ns
Commercial
MP
GS74108ATP-8I
400 mil TSOP-II
8 ns
Industrial
MP
GS74108ATP-10I
400 mil TSOP-II
10 ns
Industrial
MP
GS74108ATP-12I
400 mil TSOP-II
12 ns
Industrial
MP
GS74108AGP-8
RoHS-compliant 400 mil TSOP-II
8 ns
Commercial
PQ
GS74108AGP-10
RoHS-compliant 400 mil TSOP-II
10 ns
Commercial
PQ
GS74108AGP-12
RoHS-compliant 400 mil TSOP-II
12 ns
Commercial
PQ
GS74108AGP-8I
RoHS-compliant 400 mil TSOP-II
8 ns
Industrial
PQ
GS74108AGP-10I
RoHS-compliant 400 mil TSOP-II
10 ns
Industrial
PQ
GS74108AGP-12I
RoHS-compliant 400 mil TSOP-II
12 ns
Industrial
PQ
GS74108AJ-8
400 mil SOJ
8 ns
Commercial
MP
GS74108AJ-10
400 mil SOJ
10 ns
Commercial
MP
GS74108AJ-12
400 mil SOJ
12 ns
Commercial
MP
GS74108AJ-8I
400 mil SOJ
8 ns
Industrial
MP
GS74108AJ-10I
400 mil SOJ
10 ns
Industrial
MP
GS74108AJ-12I
400 mil SOJ
12 ns
Industrial
MP
GS74108AGJ-8
RoHS-compliant 400 mil SOJ
8 ns
Commercial
PQ
GS74108AGJ-10
RoHS-compliant 400 mil SOJ
10 ns
Commercial
PQ
GS74108AGJ-12
RoHS-compliant 400 mil SOJ
12 ns
Commercial
PQ
GS74108AGJ-8I
RoHS-compliant 400 mil SOJ
8 ns
Industrial
PQ
GS74108AGJ-10I
RoHS-compliant 400 mil SOJ
10 ns
Industrial
PQ
GS74108AGJ-12I
RoHS-compliant 400 mil SOJ
12 ns
Industrial
PQ
GS74108AX-8
6 mm x 10 mm FPBGA
8 ns
Commercial
MP
GS74108AX-10
6 mm x 10 mm FPBGA
10 ns
Commercial
MP
GS74108AX-12
6 mm x 10 mm FPBGA
12 ns
Commercial
MP
GS74108AX-8I
6 mm x 10 mm FPBGA
8 ns
Industrial
MP
GS74108AX-10I
6 mm x 10 mm FPBGA
10 ns
Industrial
MP
Rev: 1.07 1/2006
11/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.
GS74108ATP/J/X
Ordering Information
Part Number1
Package2
Access Time
Temp. Range
Status3
GS74108AX-12I
6 mm x 10 mm FPBGA
12 ns
Industrial
MP
GS74108AGX-8
RoHS-compliant 6 mm x 10 mm FPBGA
8 ns
Commercial
PQ
GS74108AGX-10
RoHS-compliant 6 mm x 10 mm FPBGA
10 ns
Commercial
PQ
GS74108AGX-12
RoHS-compliant 6 mm x 10 mm FPBGA
12 ns
Commercial
PQ
GS74108AGX-8I
RoHS-compliant 6 mm x 10 mm FPBGA
8 ns
Industrial
PQ
GS74108AGX-10I
RoHS-compliant 6 mm x 10 mm FPBGA
10 ns
Industrial
PQ
GS74108AGX-12I
RoHS-compliant 6 mm x 10 mm FPBGA
12 ns
Industrial
PQ
Notes:
1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. For example: GS74108ATP-8T.
2. All GSI Technology packages are at least 5/6 RoHS compliant. Packages listed with the additional “G” designator are 6/6 RoHS compliant.
3. MP = Mass Production. PQ = Pre-Qualification.
Rev: 1.07 1/2006
12/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.
GS74108ATP/J/X
4M Asynchronous Datasheet Revision History
Rev. Code: Old;
New
Types of Changes
Format or Content
Page #/Revisions/Reason
Format/Content
• Creation of new datasheet
74108A_r1; 74108A_r1_01
Content
• Added 6 ns speed bin
• Updated all power numbers
74108A_r1_01; 74108A_r1_02
Content
• Updated Recommended Operating Conditions table on page 4
• Added 7 ns bin to entire document
• Added X package
74108A_r1_02; 74108A_r1_03
Content
• Removed 6 ns speed bin from entire document
• Corrected “X” package pinout
74108A_r1_03; 74108A_r1_04
Content
• Removed 7 ns speed bin from entire document
74108A_r1_04; 74108A_r1_05
Content
• Updated format
• Added Pb-free information for TSOP-II package
74108A_r1_05; 74108A_r1_06
Content
• Added Pb-free information for FP-BGA package
74108A_r1_06; 74108A_r1_07
Content
• Added RoHS-compliant information for SOJ
• Changed Pb-free references to RoHS-compliant
• Added status to ordering information table
74108A_r1
Rev: 1.07 1/2006
13/13
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.
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