H11D1X, H11D2X, H11D3X, H11D4X H11D1, H11D2, H11D3, H11D4 HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm 'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 2.54 7.0 6.0 1 2 6 5 3 4 1.2 7.62 6.62 DESCRIPTION The H11D series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z High BVCER ( 300V - H11D1, H11D2 ) ( 200V - H11D3, H11D4 ) z All electrical parameters 100% tested z Custom electrical selections available APPLICATIONS z DC motor controllers z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances OPTION G OPTION SM 7.62 SURFACE MOUNT 0.6 0.1 10.46 9.86 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 0.26 3.35 ABSOLUTEMAXIMUMRATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUTDIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 100mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCER H11D1, H11D2 H11D3, H11D4 Collector-base Voltage BVCBO H11D1, H11D2 H11D3, H11D4 Emitter-collector Voltage BVECO Collector Current Power Dissipation (RBE= 1MΩ ) 300V 200V 300V 200V 6V 100mA 150mW POWER DISSIPATION 1.25 0.75 0.26 10.16 Total Power Dissipation 250mW (derate linearly 2.67mW/°C above 25°C) ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1UD England Tel: (01429)863609 Fax : (01429) 863581 e-mail [email protected] http://www.isocom.com 14/8/08 DB91077 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 1.5 V IF = 10mA 10 μA VR = 6V 300 200 V V IC = 1mA, RBE = 1MΩ ( note 2 ) 300 200 6 V V V IC = 100μA 100 250 nA μA 100 250 nA μA VCE = 200V,RBE=1MΩ VCE= 200V,RBE=1MΩ, TA=100°C VCE = 100V,RBE=1MΩ VCE= 100V,RBE=1MΩ, TA=100°C Reverse Current (IR) Output Collector-emitter Breakdown (BVCER ) H11D1, H11D2 H11D3, H11D4 Collector-base Breakdown (BVCBO) H11D1, H11D2 H11D3, H11D4 Emitter-collector Breakdown (BVECO ) Collector-emitter Dark Current (ICER ) H11D1, H11D2 H11D3, H11D4 Coupled Current Transfer Ratio (CTR) 20 0.4 5300 7500 5x1010 Input-output Isolation Resistance RISO Turn-on Time ton Turn-off Time toff Note 1 Note 2 IE = 100μA % Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO TEST CONDITION 5 5 10mA IF , 10V VCE , RBE = 1MΩ 10mA IF , 0.5mA IC , RBE = 1MΩ See note 1 See note 1 VIO = 500V (note 1) VCC = 10V, IC= 2mA, RL = 100Ω , fig 1 V VRMS VPK Ω μs μs Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input ton toff RL = 100Ω tr Output tf Output 10% 10% 90% 90% FIG 1 14/8/08 DB91077m-AAS/A3 Collector Power Dissipation vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current ( normalised to 10mA IF ) 10 Relative current transfer ratio Collector power dissipation PC (mW) 400 300 200 100 0 1.0 0.1 VCE = 10V RBE = 1MΩ TA = 25°C 0.01 -30 0 25 50 75 100 1 125 5 10 20 50 Forward current IF (mA) Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Relative Current Transfer Ratio vs. Ambient Temperature 80 Relative current transfer ratio 70 Forward current IF (mA) 2 60 50 40 30 20 10 2.4 2.2 2.0 1.8 Normalised to VCE = 10V , IF = 10mA , RBE = 1MΩ , TA = 25°C IF = 20mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IF = 10mA IF = 5mA 0 -30 0 25 50 75 100 125 -30 Ambient temperature TA ( °C ) 0 25 50 75 Ambient temperature TA ( °C ) 100 Collector-base Current vs. Ambient Temperature Forward Voltage vs. Forward Current Collector-base current ICBO (μA) 800 Forward voltage VF (V) 1.4 TA = -55°C 1.3 1.2 TA = +25°C 1.1 1.0 TA= +100°C 0.9 0.8 VCB= 10V IF = 50mA 600 500 400 VCB= 200V VCB= 10V VCB= 10V IF = 10mA IF = 10mA IF = 5mA 300 200 100 0 0.1 0.2 0.5 1 2 5 10 Forward current IF (mA) 14/8/08 700 20 50 -30 0 25 50 75 100 Ambient temperature TA ( °C ) DB91077m-AAS/A3