ON MBR41H100CT Switchmode power rectifier Datasheet

MBR41H100CT,
MBRB41H100CT,
MBRB41H100CT-1
SWITCHMODE]
Power Rectifier
100 V, 40 A
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1
Features and Benefits
•
•
•
•
•
•
•
2, 4
Low Forward Voltage: 0.67 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
40 A Total (20 A Per Diode Leg)
Guard−Ring for Stress Protection
Pb−Free Packages are Available
3
TO−220AB
CASE 221A
PLASTIC
STYLE 6
Applications
1
• Power Supply − Output Rectification
• Power Management
• Instrumentation
AYWW
B41H100G
AKA
3
D2PAK
CASE 418B
STYLE 3
1
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight (Approximately): 1.9 Grams (TO−220AB)
•
2
4
Mechanical Characteristics:
•
MARKING
DIAGRAMS
4
AYWW
B41H100G
AKA
3
1.7 Grams (D2PAK)
1.5 Grams (TO−262)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
4
I2PAK (TO−262)
CASE 418D
PLASTIC
STYLE 3
A
Y
WW
G
AKA
12
3
Please See the Table on the Following Page
AYWW
B41H100G
AKA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Polarity Designator
ORDERING INFORMATION
Package
Shipping†
TO−220
50 Units/Rail
MBR41H100CTG
TO−220
(Pb−Free)
50 Units/Rail
MBRB41H100CT−1G
TO−262
(Pb−Free)
50 Units/Rail
MBRB41H100CTT4G
D2PAK
(Pb−Free)
800/Tape &
Reel
Device
MBR41H100CT
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
June, 2008 − Rev. 6
1
Publication Order Number:
MBR41H100CT/D
MBR41H100CT, MBRB41H100CT, MBRB41H100CT−1
MAXIMUM RATINGS (Per Diode Leg)
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR) TC = 150°C
IF(AV)
20
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 145°C
IFRM
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
350
A
Rating
Operating Junction Temperature (Note 1)
TJ
+175
°C
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
WAVAL
400
mJ
> 400
> 8000
V
2.0
70
°C/W
Controlled Avalanche Energy (see test conditions in Figures 10 and 11)
ESD Ratings: Machine Model = C
Human Body Model = 3B
THERMAL CHARACTERISTICS (PER DIODE LEG)
Maximum Thermal Resistance − Junction−to−Case
− Junction−to−Ambient
RqJC
RqJA
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 20 A, TC = 25°C)
(IF = 20 A, TC = 125°C)
(IF = 40 A, TC = 25°C)
(IF = 40 A, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 125°C)
(Rated DC Voltage, TC = 25°C)
iR
V
0.80
0.67
0.90
0.76
mA
10
0.01
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
1000
100
TJ = 150°C
10
TJ = 125°C
TJ = 25°C
1
0.1
0
0.2
0.4
0.6
1.0
0.8
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBR41H100CT, MBRB41H100CT, MBRB41H100CT−1
1000
100
TJ = 150°C
TJ = 125°C
10
TJ = 25°C
1
0.1
0
0.2
1.0E−01
IR, REVERSE CURRENT (AMPS)
1.0E−01
1.0E−02
TJ = 125°C
TJ = 125°C
1.0E−05
TJ = 25°C
TJ = 25°C
1.0E−06
1.0E−07
1.0E−07
1.0E−08
0
20
40
60
80
100
40
60
80
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
dc
25
SQUARE WAVE
15
10
5
110
20
VR, REVERSE VOLTAGE (VOLTS)
35
30
1.0E−08
0
PFO, AVERAGE POWER DISSIPATION
(WATTS)
IF, AVERAGE FORWARD CURRENT (AMPS)
1.2
1.0E−04
1.0E−05
1.0E−06
1.0
TJ = 150°C
1.0E−03
1.0E−04
0.8
1.0E−02
TJ = 150°C
1.0E−03
0
100
0.6
Figure 2. Maximum Forward Voltage
IR, MAXIMUM REVERSE CURRENT (AMPS)
Figure 1. Typical Forward Voltage
20
0.4
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
120
130
140
150
160
170
180
50
45
40
35
SQUARE
30
25
DC
20
15
10
5
0
0
5
10
15
20
25
30
35
40
45
TC, CASE TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
50
MBR41H100CT, MBRB41H100CT, MBRB41H100CT−1
10000
C, CAPACITANCE (pF)
TJ = 25°C
1000
100
10
0
20
40
60
80
100
VR, REVERSE VOLTAGE (VOLTS)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 7. Capacitance
100
10
1
D = 0.5
0.2
0.1
0.05
0.01
0.1
P(pk)
t1
0.01
t2
SINGLE PULSE
0.001
0.000001
0.00001
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.1
0.01
1
10
100
1000
t1, TIME (sec)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 8. Thermal Response Junction−to−Ambient
10
1
0.1
D = 0.5
0.2
0.1
0.05
0.01
P(pk)
0.01
t1
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 9. Thermal Response Junction−to−Case
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4
10
100
1000
MBR41H100CT, MBRB41H100CT, MBRB41H100CT−1
+VDD
IL
10 mH COIL
BVDUT
VD
MERCURY
SWITCH
ID
ID
IL
DUT
S1
VDD
t0
Figure 10. Test Circuit
t1
t2
t
Figure 11. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
The unclamped inductive switching circuit shown in
Figure 10 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
EQUATION (1):
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
V
BV
DUT DD
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
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5
Ǔ
MBR41H100CT, MBRB41H100CT, MBRB41H100CT−1
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
−T−
B
F
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
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6
ANODE
CATHODE
ANODE
CATHODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MBR41H100CT, MBRB41H100CT, MBRB41H100CT−1
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
1
2
3
A
S
−T−
SEATING
PLANE
K
J
G
D 3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
W
H
M
T B
M
N
R
P
L
L
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
17.02
0.67
5.08
0.20
3.05
0.12
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
U
L
M
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MBR41H100CT, MBRB41H100CT, MBRB41H100CT−1
PACKAGE DIMENSIONS
I2PAK (TO−262)
CASE 418D−01
ISSUE D
C
E
V
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
A
W
1
2
DIM
A
B
C
D
E
F
G
H
J
K
S
V
W
3
F
−T−
SEATING
PLANE
K
S
INCHES
MIN
MAX
0.335
0.380
0.380
0.406
0.160
0.185
0.026
0.035
0.045
0.055
0.122 REF
0.100 BSC
0.094
0.110
0.013
0.025
0.500
0.562
0.390 REF
0.045
0.070
0.522
0.551
MILLIMETERS
MIN
MAX
8.51
9.65
9.65
10.31
4.06
4.70
0.66
0.89
1.14
1.40
3.10 REF
2.54 BSC
2.39
2.79
0.33
0.64
12.70
14.27
9.90 REF
1.14
1.78
13.25
14.00
J
G
D 3 PL
0.13 (0.005) M T B
H
M
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MBR41H100CT/D