ES1F - ES1J Fast Rectifiers Features • For surface mount applications. • Glass passivated junction. • Low profile package. • Easy pick and place. • Built-in strain relief. • Superfast recovery times for high efficiency. SMA(DO-214AC) Color Band Denotes Cathode Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Parameter ES1F ES1G ES1H ES1J 300 400 500 600 Units VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current 1.0 A IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave (JEDEC method) 30 A Junction Temperature 150 °C -55 to 150 °C 1.47 W Value Units TJ TSTG PD Storage Temperature Range Power Dissipation V * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter RθJA Thermal Resistance, Junction to Ambient * 85 °C/W RθJL Thermal Resistance, Junction to Lead * 35 °C/W Value Units * P. C. B mounted on 0.2’’ x 0.2’’( 5 x 5 mm) copper Pad Area. Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter VF Maximum Forward Voltage @ IF = 1.0 A Trr Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A IR Cj Maximum Reverse Current @ rated VR 1.3 TA = 25°C TA = 100°C Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz ©2007 Fairchild Semiconductor Corporation ES1F - ES1J Rev. A 10.0 1 1.7 V 35 ns 5.0 100 uA 8.0 pF www.fairchildsemi.com ES1F - ES1J Fast Rectifiers July 2007 FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 1.2 1.0 RESISTIVE OR INDUCTIVE LOAD 0.2X0.2"(5.0X5.0mm) COPPER PAD AREAS 0.8 0.6 0.4 0.2 30 8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C 25 20 15 10 5.0 0 80 90 100 110 120 130 140 100 10 1 150 o LEAD TEMPERATURE. ( C) NUMBER OF CYCLES AT 60Hz FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4- TYPICAL REVERSE CHARACTERISTICS 1000 50 INSTANTANEOUS REVERSE CURRENT. ( A) o Tj=25 C PULSE WIDTH 300uS 1% DUTY CYCLE G 1A -D 10 10 1F -1 ES 1 ES ES1F-1G ES1H-1J 1H -1 J 1 ES INSTANTANEOUS FORWARD CURRENT. (A) 0 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 0.1 0.1 100 Tj=125 0C 10 Tj=85 0C 1 Tj=25 0C 0.1 0.01 0.4 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FORWARD VOLTAGE. (V) FIG.5- TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE.(pF) 14 Tj=25 0C f=1.0MHz Vsig=50mVp-p 12 ES1 10 ES 8.0 1H F- G -J 6.0 4.0 2.0 0 0 1 10 100 REVERSE VOLTAGE. (V) 2 ES1F - ES1J Rev. A www.fairchildsemi.com ES1F - ES1J Fast Rectifiers Typical Performance Characteristics ES1F - ES1J Fast Rectifiers Package Dimensions SMA / DO - 214AC Dimensions in Millimeters 3 ES1F - ES1J Rev. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30