Fairchild ES1J Fast rectifier Datasheet

ES1F - ES1J
Fast Rectifiers
Features
• For surface mount applications.
• Glass passivated junction.
• Low profile package.
• Easy pick and place.
• Built-in strain relief.
• Superfast recovery times for high efficiency.
SMA(DO-214AC)
Color Band Denotes Cathode
Absolute Maximum Ratings *
Symbol
Ta = 25°C unless otherwise noted
Value
Parameter
ES1F
ES1G
ES1H
ES1J
300
400
500
600
Units
VRRM
Maximum Repetitive Reverse Voltage
IF(AV)
Average Rectified Forward Current
1.0
A
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave (JEDEC method)
30
A
Junction Temperature
150
°C
-55 to 150
°C
1.47
W
Value
Units
TJ
TSTG
PD
Storage Temperature Range
Power Dissipation
V
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance, Junction to Ambient *
85
°C/W
RθJL
Thermal Resistance, Junction to Lead *
35
°C/W
Value
Units
* P. C. B mounted on 0.2’’ x 0.2’’( 5 x 5 mm) copper Pad Area.
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
VF
Maximum Forward Voltage @ IF = 1.0 A
Trr
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
IR
Cj
Maximum Reverse Current @ rated VR
1.3
TA = 25°C
TA = 100°C
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
©2007 Fairchild Semiconductor Corporation
ES1F - ES1J Rev. A
10.0
1
1.7
V
35
ns
5.0
100
uA
8.0
pF
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ES1F - ES1J Fast Rectifiers
July 2007
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
AVERAGE FORWARD CURRENT. (A)
1.2
1.0
RESISTIVE OR
INDUCTIVE LOAD
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
0.8
0.6
0.4
0.2
30
8.3ms Single Half Sine Wave
o
(JEDEC Method) at TL=120 C
25
20
15
10
5.0
0
80
90
100
110
120
130
140
100
10
1
150
o
LEAD TEMPERATURE. ( C)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
50
INSTANTANEOUS REVERSE CURRENT. ( A)
o
Tj=25 C
PULSE WIDTH 300uS
1% DUTY CYCLE
G
1A
-D
10
10
1F
-1
ES
1
ES
ES1F-1G
ES1H-1J
1H
-1
J
1
ES
INSTANTANEOUS FORWARD CURRENT. (A)
0
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0.1
0.1
100
Tj=125 0C
10
Tj=85 0C
1
Tj=25 0C
0.1
0.01
0.4
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE.(pF)
14
Tj=25 0C
f=1.0MHz
Vsig=50mVp-p
12
ES1
10
ES
8.0
1H
F-
G
-J
6.0
4.0
2.0
0
0
1
10
100
REVERSE VOLTAGE. (V)
2
ES1F - ES1J Rev. A
www.fairchildsemi.com
ES1F - ES1J Fast Rectifiers
Typical Performance Characteristics
ES1F - ES1J Fast Rectifiers
Package Dimensions
SMA / DO - 214AC
Dimensions in Millimeters
3
ES1F - ES1J Rev. A
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Definition
Advance Information
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This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
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changes at any time without notice to improve design.
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Rev. I30
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