HiPerFETTM Power MOSFETs Q2-Class IXFK38N80Q2 IXFN38N80Q2 IXFX38N80Q2 VDSS ID25 = 800V = 38A Ω ≤ 220mΩ ≤ 250ns RDS(on) trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 800 800 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 38 150 A A IA EAS TC = 25°C TC = 25°C 38 4 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 735 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 30 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA t = 1min t = 1s Md Mounting torque (TO-264) Terminal connection torque (SOT-227B) FC Mounting force Weight TO-264 PLUS247 SOT-227B (PLUS247) Symbol Test Conditions BVDSS VGS = 0V, ID = 3mA 800 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION,All rights reserved Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. TJ = 125°C V 5.5 V ± 200 nA 50 2 μA mA 220 mΩ G D (TAB) S PLUS247 (IXFX) (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S G S D Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. G = Gate S = Source D = Drain TAB = Drain Features • Double metal process for low gate resistance • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Avalanche energy and current rated • Fast intrinsic Rectifier • miniBLOCK package version with Aluminum Nitrate isolation Advantages • Easy to mount • Space savings • High power density DS99150B(5/08) IXFK38N80Q2 IXFN38N80Q2 IXFX38N80Q2 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 10V, ID = 0.5 • ID25, Note 1 25 Ciss Coss TO-264 (IXFK) Outline 37 S 9500 pF VGS = 0V, VDS = 25V, f = 1MHz Crss 888 pF 185 pF td(on) Resistive Switching Times 20 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 16 ns td(off) RG = 1Ω (External) 60 ns 12 ns 190 nC 44 nC 88 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.17 RthCS Symbol Test Conditions IS VGS = 0V ISM VSD trr QRM IRM °C/W 0.15 Source-Drain Diode °C/W Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 38 A Repetitive, pulse width limited by TJM 150 A IF = IS, VGS = 0V, Note 1 1.5 V 250 ns μC A IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1 10 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM (IXFX) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. SOT-227B Outline Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK38N80Q2 IXFN38N80Q2 IXFX38N80Q2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 40 90 VGS = 10V 35 70 30 6V 25 20 I D - Amperes I D - Amperes VGS = 10V 7V 80 5.5V 15 10 60 6V 50 40 30 5.5V 20 5 5V 5V 10 0 0 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 Fig. 3. Output Characteristics @ 125ºC 18 21 24 27 30 3.2 VGS = 10V 6V VGS = 10V 2.8 R D S ( o n ) - Normalized 35 30 I D - Amperes 15 Fig. 4. RDS(on) Normalized to 0.5 I D25 Value vs. Junction Temperature 40 5.5V 25 20 5V 15 10 2.4 ID = 38A 2.0 ID = 19A 1.6 1.2 0.8 5 0 0.4 0 2 4 6 8 10 12 14 16 18 -50 20 -25 0 25 50 75 100 VD S - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to 0.5 I D25 Value Fig. 6. Drain Current vs. Case Temperature vs. I D 2.8 125 150 125 150 45 2.6 40 VGS = 10V 2.4 TJ = 125ºC 35 2.2 I D - Amperes R D S ( o n ) - Normalized 12 VD S - Volts V D S - Volts 2.0 1.8 1.6 1.4 30 25 20 15 10 1.2 5 TJ = 25ºC 1.0 0.8 0 0 10 20 30 I 40 D 50 - Amperes © 2008 IXYS CORPORATION,All rights reserved 60 70 80 90 -50 -25 0 25 50 75 100 T C - Degrees Centigrade IXFK38N80Q2 IXFN38N80Q2 IXFX38N80Q2 Fig. 7. Input Admittance Fig. 8. Transconductance 80 60 55 60 45 TJ = 125ºC 25ºC - 40ºC 40 35 g f s - Siemens I D - Amperes TJ = - 40ºC 70 50 30 25 20 50 25ºC 40 125ºC 30 15 20 10 10 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 10 20 V G S - Volts Fig. 9. Source Current vs.Source-To-Drain Voltage 10 110 9 VDS = 400V 8 ID = 19A 100 40 50 60 70 - Amperes IG = 10m A 7 80 VG S - Volts I S - Amperes 90 70 60 50 6 5 4 3 TJ = 125ºC 30 D Fig. 10. Gate Charge 120 40 30 I 2 TJ = 25ºC 20 1 10 0 0 0.4 0.5 0.6 0.7 0.8 VS D 0.9 1.0 1.1 1.2 0 1.3 20 40 - Volts 60 80 100 120 140 160 180 200 QG - nanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100000 1000 RDS(on) Lim it 100µs C iss 10000 I D - Amperes Capacitance - picoFarads f = 1MHz C oss 1000 25µs 1ms 100 10ms 10 TJ = 150ºC C rss TC = 25ºC Single Pulse 100 DC 1 0 5 10 15 20 25 30 35 40 VD S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 VD S - Volts 1000 IXFK38N80Q2 IXFN38N80Q2 IXFX38N80Q2 Fig. 13. Maximum Transient Thermal Impedance Z( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 1000 Pulse Width - milliseconds © 2008 IXYS CORPORATION,All rights reserved IXYS REF: F_38N80Q2(94)5-28-08-A