PHILIPS BSP20 Npn high-voltage transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D087
BSP19; BSP20
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Mar 03
1999 Jun 01
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSP19; BSP20
PINNING
FEATURES
• Low current (max. 100 mA)
PIN
• High voltage (max. 350 V).
DESCRIPTION
1
base
2, 4
APPLICATIONS
collector
3
emitter
• Switching and amplification
• Especially used in telephony and automotive
applications.
4
handbook, halfpage
2, 4
DESCRIPTION
1
NPN transistor in a SOT223 plastic package.
PNP complement: BSP16.
3
1
2
3
Top view
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
BSP20
collector-emitter voltage
BSP20
emitter-base voltage
IC
collector current (DC)
IB
base current (DC)
Ptot
total power dissipation
Tstg
UNIT
−
400
V
−
300
V
−
350
V
−
250
V
−
5
V
−
100
mA
open base
BSP19
VEBO
MAX.
open emitter
BSP19
VCEO
MIN.
open collector
−
100
mA
−
1.2
W
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Jun 01
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSP19; BSP20
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-s
thermal resistance from junction to soldering point
VALUE
note 1
UNIT
104
K/W
23
K/W
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCE = 300 V
−
20
nA
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
−
100
nA
hFE
DC current gain
VCE = 10 V; IC = 20 mA
40
−
VCEsat
collector-emitter saturation voltage
IC = 50 mA; IB = 4 mA
−
0.5
V
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
2.5
pF
fT
transition frequency
VCE = 10 V; IC = 10 mA; f = 100 MHz
70
−
MHz
1999 Jun 01
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSP19; BSP20
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
96-11-11
97-02-28
SOT223
1999 Jun 01
EUROPEAN
PROJECTION
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSP19; BSP20
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jun 01
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSP19; BSP20
NOTES
1999 Jun 01
6
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSP19; BSP20
NOTES
1999 Jun 01
7
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Printed in The Netherlands
115002/03/pp8
Date of release: 1999 Jun 01
Document order number:
9397 750 05773
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