Design Assistance Customised Pack Sizes / Qtys Assembly Assistance Support for all industry recognised supply formats: Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming o Waffle Pack o Gel Pak o Tape & Reel Onsite storage, stockholding & scheduling 100% Visual Inspection o MIL-STD 883 Condition A o MIL-STD 883 Condition A On-site failure analysis Bespoke 24 Hour monitored storage systems for secure long term product support On-site failure analysis Contact [email protected] For price, delivery and to place orders HMC451 www.analog.com www.micross.com Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC451 v03.0913 LINEAR & POWER AMPLIFIER - CHIP GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Typical Applications Features The HMC451 is ideal for use as a driver amplifier for: Gain: 22 dB • Point-to-Point Radios Saturated Output Power: +22 dBm @ 24% PAE • Point-to-Multi-Point Radios & VSAT Output IP3: +30 dBm • Test Equipment & Sensors Single Positive Supply: +5V @ 127mA • LO Driver for HMC Mixers 50 Ohm Matched Input/Output • Military & Space Small Size: 1.27 x 1.27 x 0.1 mm Functional Diagram General Description The HMC451 is a general purpose GaAs PHEMT MMIC Medium Power Amplifier which operates between 5 and 20 GHz. The amplifier provides 22 dB of gain, +22 dBm of saturated power at 24% PAE from a +5V supply. Consistent gain and output power across the operating band make it possible to use a common driver/LO amplifier approach in multiple radio bands. The HMC451 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (1.61mm2) size, single supply operation and DC blocked I/Os. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length <0.31mm (<12 mils). Electrical Specifications, TA = +25° C, Vdd1, Vdd2 = +5V Parameter Min. Frequency Range Gain 19 Gain Variation Over Temperature Max. Min. 22 0.03 Typ. Max. Min. 15 - 18 17 0.04 20 0.03 15 0.04 Typ. Max. Units 18 - 20 GHz 18 dB 0.03 0.04 dB/ °C Input Return Loss 14 11 8 dB Output Return Loss 16 11 8 dB 20 dBm Output Power for 1 dB Compression (P1dB) 17 20 17 20 17 Saturated Output Power (Psat) 22 21 21 dBm Output Third Order Intercept (IP3) 32 30 30 dBm Noise Figure Supply Current (Idd) 1 Typ. 5 - 15 7 127 6 150 127 6.5 150 127 dB 150 mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC451 v03.0913 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Broadband Gain & Return Loss Gain vs. Temperature 25 28 24 10 20 5 GAIN (dB) RESPONSE (dB) 15 0 -5 16 12 -10 8 -15 -20 4 -25 -30 0 3 5 7 9 11 13 15 17 19 21 23 25 4 6 8 10 FREQUENCY (GHz) S21 12 14 16 18 20 22 FREQUENCY (GHz) S11 S22 +25C Input Return Loss vs. Temperature +85C -55C Output Return Loss vs. Temperature 0 0 -5 RETURN LOSS (dB) RETURN LOSS (dB) -5 -10 -15 -20 -10 -15 -20 -25 -30 -35 -25 -40 4 6 8 10 12 14 16 18 20 4 22 6 8 10 FREQUENCY (GHz) +25C +85C -55C +25C Output P1dB vs. Temperature 14 16 18 20 22 +85C -55C Output Psat vs. Temperature 28 28 24 24 20 20 Psat (dBm) P1dB (dBm) 12 FREQUENCY (GHz) LINEAR & POWER AMPLIFIER - CHIP 20 16 12 16 12 8 8 4 4 0 0 4 6 8 10 12 14 16 18 20 22 4 6 8 10 FREQUENCY (GHz) +25C +85C 12 14 16 18 20 22 FREQUENCY (GHz) -55C +25C +85C -55C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC451 v03.0913 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Power Compression @ 10 GHz Power Compression @ 20 GHz Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 28 24 20 16 12 8 4 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 24 20 16 12 8 4 0 -18 6 -14 -10 INPUT POWER (dBm) Pout (dBm) Gain (dB) PAE (%) Pout (dBm) -2 2 6 Gain (dB) PAE (%) Noise Figure vs. Temperature 38 11 10 9 NOISE FIGURE (dB) 34 30 26 22 8 7 6 5 4 3 2 1 18 0 4 6 8 10 12 14 16 18 20 22 4 6 8 10 FREQUENCY (GHz) +25C +85C 16 18 20 22 0 24 -10 23 -20 22 21 +85C -55C Reverse Isolation vs. Temperature ISOLATION (dB) GAIN (dB), P1dB (dBm), Psat (dBm) 14 +25C -55C 25 -30 -40 20 -50 19 -60 18 4.5 12 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 10 GHz -70 5 5.5 4 7 10 Gain P1dB 13 16 19 22 FREQUENCY (GHz) Vdd SUPPLY VOLTAGE (V) 3 -6 INPUT POWER (dBm) Output IP3 vs. Temperature IP3 (dBm) LINEAR & POWER AMPLIFIER - CHIP 28 Psat +25C +85C -55C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC451 v03.0913 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Drain Bias Voltage (Vdd) +5.5 Vdc Vdd (V) Idd (mA) RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm +4.5 125 Channel Temperature 175 °C +5.0 127 +5.5 129 Continuous Pdiss (T= 85 °C) (derate 13 mW/°C above 85 °C) 1.2 W Thermal Resistance (channel to die bottom) 75 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Note: Amplifier will operate over full voltage ranges shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. LINEAR & POWER AMPLIFIER - CHIP Typical Supply Current vs. Vdd Absolute Maximum Ratings NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. Overall die size ± .002 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC451 v03.0913 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz LINEAR & POWER AMPLIFIER - CHIP Pad Descriptions 5 Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 1, 3 Vdd1, Vdd2 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 µF are required. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. Die Bottom GND Die Bottom must be connected to RF/DC Ground. Pin Schematic Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC451 v03.0913 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 5 - 20 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. LINEAR & POWER AMPLIFIER - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6