FDMC86520L N-Channel Power Trench® MOSFET 60 V, 22 A, 7.9 mΩ Features General Description Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant Applications Primary Switch in isolated DC-DC Synchronous Rectifier Load Switch Bottom Top Pin 1 S S G S D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 22 55 (Note 1a) -Pulsed 13.5 A 60 Single Pulse Avalanche Energy EAS Ratings 60 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 79 40 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.1 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC86520L Device FDMC86520L ©2011 Fairchild Semiconductor Corporation FDMC86520L Rev.C Package Power 33 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC86520L N-Channel PowerTrench® MOSFET August 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3 V 60 V 29 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 13.5 A 6.5 7.9 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 11.5 A 9.1 11.7 VGS = 10 V, ID = 13.5 A, TJ = 125 °C 9 11 VDS = 5 V, ID = 13.5 A 49 gFS Forward Transconductance 1 1.7 -7 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 30 V, VGS = 0 V, f = 1 MHz 3420 4550 pF 638 850 pF 25 40 pF Ω 0.5 Switching Characteristics td(on) Turn-On Delay Time 15 30 ns tr Rise Time 5.2 10 ns td(off) Turn-Off Delay Time 32 55 ns tf Fall Time 3.4 10 ns 45 64 nC 21 30 VDD = 30 V, ID = 13.5 A, VGS = 10 V, RGEN = 6 Ω Qg(TOT) Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge VGS = 0 V to 4.5 V Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 30 V, ID = 13.5 A nC 9.6 nC 4.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 13.5 A (Note 2) 0.82 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.71 1.2 38 62 ns 21 34 nC IF = 13.5 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 125 °C/W when mounted on a minimum pad of 2 oz copper 53 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 23 A, VDD = 54 V, VGS = 10 V. FDMC86520L Rev.C 2 www.fairchildsemi.com FDMC86520L N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 60 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4 ID, DRAIN CURRENT (A) VGS = 4 V 50 VGS = 3.5 V 40 VGS = 10 V VGS = 4.5 V 30 VGS = 3 V 20 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.5 1.0 1.5 2.0 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 VGS = 3 V VGS = 3.5 V 2 VGS = 4 V VGS = 4.5 V 1 VGS = 10 V 0 2.5 0 10 Figure 1. On Region Characteristics rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 13.5 A VGS = 10 V ID = 13.5 A 50 60 20 TJ = 125 oC 10 TJ = 25 oC 0 100 125 150 2 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VDS = 5 V 40 30 TJ = 150 oC 20 TJ = 25 oC 10 TJ = -55 oC VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 2.0 2.5 3.0 3.5 4.0 0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics FDMC86520L Rev.C 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 0 1.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 30 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) 40 40 1.6 50 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 60 20 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC86520L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 13.5 A VDD = 30 V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 40 V VDD = 20 V 6 4 Ciss 1000 Coss 100 10 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 40 1 0.1 50 1 Figure 7. Gate Charge Characteristics 60 Figure 8. Capacitance vs Drain to Source Voltage 60 ID, DRAIN CURRENT (A) 50 IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = 100 oC 50 VGS = 10 V 40 VGS = 4.5 V 30 20 Limited by package 10 TJ = 125 oC 1 0.01 0.1 1 o RθJC = 3.1 C/W 10 0 25 100 50 P(PK), PEAK TRANSIENT POWER (W) 100 us 10 1 ms 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 0.1 1s RθJA = 125 oC/W 10 s DC o TA = 25 C 0.01 0.01 0.1 1 10 100 300 150 2000 1000 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMC86520L Rev.C 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 THIS AREA IS LIMITED BY rDS(on) 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC86520L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMC86520L Rev.C 5 www.fairchildsemi.com FDMC86520L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 3.30 0.10 C A B 2X 3.30 PIN#1 QUADRANT 0.10 C TOP VIEW 2X 0.8 MAX 0.10 C RECOMMENDED LAND PATTERN (0.20) 0.08 C 0.05 0.00 SIDE VIEW SEATING PLANE PIN #1 IDENT 1 (4X) 0.55 0.45 2.32 2.22 0.79 A. DOES NOT CONFORM TO JEDEC REGISTRATION MO-229 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. LAND PATTERN RECOMMENDATION IS BASED ON FSC DESIGN ONLY 4 0.35 1.15 R0.15 2.05 1.95 0.30 E. DRAWING FILE NAME : MLP08Srev1 8 5 0.65 1.95 0.40 (8X) 0.30 0.10 0.05 C A B C BOTTOM VIEW FDMC86520L Rev.C 6 www.fairchildsemi.com FDMC86520L N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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