DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC559 PNP general purpose transistor Product data sheet Supersedes data of 1999 May 28 2004 Nov 05 NXP Semiconductors Product data sheet PNP general purpose transistor BC559 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 30 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • General purpose switching and amplification. DESCRIPTION handbook, halfpage1 PNP transistor in a TO-92 (SOT54) plastic package. NPN complement: BC549. 3 2 3 2 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER BC559C NAME DESCRIPTION VERSION SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −30 V VCEO collector-emitter voltage open base − −30 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C 2004 Nov 05 Tamb ≤ 25 °C 2 NXP Semiconductors Product data sheet PNP general purpose transistor BC559 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 250 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. UNIT VCB = −30 V; IE = 0 A − −1 −15 nA VCB = −30 V; IE = 0 A; Tj = 150 °C − − −4 μA nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A − − −100 hFE DC current gain; BC559C VCE = −5 V; IC = −2 mA; see Fig.2 420 − 800 VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −60 −300 mV IC = −100 mA; IB = −5 mA − −180 −650 mV base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA; note 1 − −750 − mV IC = −100 mA; IB = −5 mA; note 1 − −930 − mV VCE = −5 V; IC = −2 mA; note 2 −600 −650 −750 mV VBEsat VBE base-emitter voltage VCE = −5 V; IC = −10 mA; note 2 − − −820 mV Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz − 4 − pF fT transition frequency VCB = −5 V; IE = −10 mA; f = 100 MHz 100 − − MHz F noise figure; BC559C VCE = −5 V; IC = −200 μA; RS = 2 kΩ; f = 30 Hz to 15.7 kHz − − 4 dB VCE = −5 V; IC = −200 μA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 4 dB Notes 1. VBEsat decreases by about −1.7 mV/K with increasing temperature. 2. VBE decreases by about −2 mV/K with increasing temperature. 2004 Nov 05 3 NXP Semiconductors Product data sheet PNP general purpose transistor BC559 MBH728 600 handbook, full pagewidth hFE 500 VCE = −5 V 400 300 200 100 0 −10−2 −10−1 −1 −10 BC559C. Fig.2 DC current gain; typical values. 2004 Nov 05 4 −102 IC (mA) −103 NXP Semiconductors Product data sheet PNP general purpose transistor BC559 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 2004 Nov 05 REFERENCES IEC JEDEC JEITA TO-92 SC-43A 5 EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 NXP Semiconductors Product data sheet PNP general purpose transistor BC559 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2004 Nov 05 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp7 Date of release: 2004 Nov 05 Document order number: 9397 750 13572