AP4533GEH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D1/D2
30V
▼ Good Thermal Performance
RDS(ON)
18mΩ
▼ Fast Switching Performance
ID
10.5A
▼ RoHS Compliant & Halogen-Free
P-CH BVDSS
S1
G1
S2
G2
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
-30V
RDS(ON)
36mΩ
ID
-7.5A
D1
G1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
30
-30
V
+20
+20
V
Continuous Drain Current
3
10.5
-7.5
A
Continuous Drain Current
3
8.4
-6.0
A
30
-30
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
W
3.13
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
6
℃/W
40
℃/W
1
200909281
AP4533GEH-HF
o
N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=8A
-
-
18
mΩ
VGS=4.5V, ID=6A
-
-
36
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
13
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=8A
-
6.5
10.5
nC
Qgs
Gate-Source Charge
VDS=15V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.3
-
nC
2
2
td(on)
Turn-on Delay Time
VDS=15V
-
8
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
17
-
ns
tf
Fall Time
RD=15Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
540
860
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Min.
Typ.
IS=2.6A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
nC
2
AP4533GEH-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-6A
-
-
36
mΩ
VGS=-4.5V, ID=-4A
-
-
65
mΩ
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
9.4
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
ID=-6A
-
9
14.5
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5.5
-
nC
2
td(on)
Turn-on Delay Time
VDS=-15V
-
8
-
ns
tr
Rise Time
ID=-1A
-
9.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
20
-
ns
tf
Fall Time
RD=15Ω
-
20
-
ns
Ciss
Input Capacitance
VGS=0V
-
500
800
pF
Coss
Output Capacitance
VDS=-25V
-
180
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
135
-
pF
Min.
Typ.
IS=-2.6A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-6A, VGS=0V
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
17
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4533GEH-HF
N-Channel
40
40
o
30
10V
7.0V
6.0V
5.0V
T A = 150 C
ID , Drain Current (A)
ID , Drain Current (A)
o
10V
7.0V
6.0V
5.0V
T A = 25 C
20
V G = 4.0 V
30
20
V G = 4.0V
10
10
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
42
ID=6A
ID=8A
V G =10V
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
34
26
1.4
1.0
18
0.6
10
2
4
6
8
-50
10
Fig 3. On-Resistance v.s. Gate Voltage
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
Normalized VGS(th) (V)
8
6
IS(A)
0
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
T j =150 o C
T j =25 o C
4
1.2
0.8
0.4
2
0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4533GEH-HF
N-Channel
f=1.0MHz
1000
I D =8A
V DS =15V
8
800
C (pF)
VGS , Gate to Source Voltage (V)
10
6
600
C iss
4
400
2
200
C oss
C rss
0
0
0
4
8
12
16
1
5
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Operation in this area
limited by RDS(ON)
100us
1ms
10ms
1
100ms
1s
0.1
DC
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
1
10
ID (A)
9
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
0.01
Rthja=75℃/W
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4533GEH-HF
P-Channel
40
40
-ID , Drain Current (A)
-ID , Drain Current (A)
30
-10V
-7.0V
-6.0V
-5.0V
T A = 150 o C
-10V
-7.0V
-6.0V
-5.0V
o
T A = 25 C
20
V G = - 4.0V
10
30
20
V G = - 4.0V
10
0
0
0
1
2
3
4
5
6
0
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
1.8
I D = -6A
V G = -10V
I D = -4 A
o
T A =25 C
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
60
50
40
1.4
1.2
1.0
30
0.8
0.6
20
2
4
6
8
-50
10
Fig 3. On-Resistance v.s. Gate Voltage
5
1.4
Normalized -VGS(th) (V)
1.6
-IS(A)
4
T j =150 o C
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6
3
0
T j , Junction Temperature ( o C)
-V GS ,Gate-to-Source Voltage (V)
T j =25 o C
2
1
1.2
1.0
0.8
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4533GEH-HF
P-Channel
f=1.0MHz
1200
1000
8
I D = -6 A
V DS = -15 V
800
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
600
C iss
4
400
2
C oss
C rss
200
0
0
0
4
8
12
1
16
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
10
100us
1ms
10ms
1
100ms
1s
0.1
o
DC
T A =25 C
Single Pulse
0.01
Normalized Thermal Response (Rthja)
100
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
0.01
Rthja=75℃/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7