AP73T02GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
BVDSS
25V
RDS(ON)
9mΩ
ID
57A
S
Description
AP73T02 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for high current application due to the low connection
resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
57
A
ID@TC=100℃
Drain Current, VGS @ 10V
40
A
160
A
50
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data & specifications subject to change without notice
Value
Units
3
℃/W
62.5
℃/W
1
201501293
AP73T02GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
Test Conditions
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
25
-
-
V
VGS=10V, ID=30A
-
-
9
mΩ
VGS=4.5V, ID=20A
-
-
16
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
40
-
S
IDSS
Drain-Source Leakage Current
VDS=25V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=15A
-
14
22
nC
Qgs
Gate-Source Charge
VDS=20V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9.5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
9
-
ns
tr
Rise Time
ID=30A
-
85
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
20.5
-
ns
tf
Fall Time
RD=0.5Ω
-
12.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
710
1130
pF
Coss
Output Capacitance
VDS=25V
-
300
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
220
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.9
-
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP73T02GH-HF
160
100
10V
7.0V
6.0V
o
T C =175 C
10V
7.0V
6.0V
5.0V
80
120
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 o C
5.0V
80
V G = 4.0V
60
V G =4.0V
40
40
20
0
0
0
2
4
6
8
10
12
0
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
8
Fig 2. Typical Output Characteristics
12
2.0
I D =20A
I D =30A
V G =10V
T C =25 o C
10
Normalized RDS(ON)
RDS(ON) (mΩ )
4
V DS , Drain-to-Source Voltage (V)
8
1.6
1.2
0.8
6
0.4
4
2
4
6
8
-50
10
0
50
100
150
200
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
30
Normalized VGS(th)
IS(A)
1.2
20
o
T j =25 o C
T j =175 C
10
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
200
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP73T02GH-HF
f=1.0MHz
1000
I D =15A
8
800
V DS =12V
V DS =15V
V DS =20V
6
C iss
C (pF)
VGS , Gate to Source Voltage (V)
10
4
600
400
C oss
C rss
2
200
0
0
0
4
8
12
16
20
24
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thjc)
1000
Operation in this
area limited by
RDS(ON)
ID (A)
100
100us
10
1ms
10ms
100ms
DC
o
T C =25 C
Single Pulse
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP73T02GH-HF
MARKING INFORMATION
73T02GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5