Z ibo Seno Electronic Engineering Co., Ltd. FR151 – FR157 1.5A FAST RECOVERY DIODE Features ! ! ! ! ! Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-15, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.40 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version D DO-15 Min Max Dim 24.5 — A 7.62 5.50 B 0.60 0.80 C 2.60 3.60 D All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 75°C Symbol FR151 FR152 FR153 FR154 FR155 FR156 FR157 Unit VRRM VRWM VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V IO 1.5 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 60 A Forward Voltage @IF = 1.5A VFM 1.2 V @TA = 25°C @TA = 100°C IRM 5.0 100 µA Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 2) trr Typical Junction Capacitance (Note 3) Cj 30 pF Operating Temperature Range Tj -65 to +150 °C TSTG -65 to +150 °C Storage Temperature Range 150 250 500 nS Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. FR151 – FR157 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. FR151 – FR157 1.5 10 IF, INSTANTANEOUS FWD CURRENT (A) I(AV), AVERAGE FWD RECTIFIED CURRENT (A) 1.2 0.9 0.6 0.3 Single phase half-wave 60 Hz resistive or inductive load 0 25 75 50 0.1 Tj = 25°C Pulse width = 300µs 0.01 125 100 1.0 150 175 200 0.6 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Forward Derating Curve 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 100 60 Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC Method) TA = 25°C f = 1.0MHz Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 1.0 0.8 40 20 0 10 1 1 10 1 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 trr +0.5A 50Ω NI (Non-inductive) 10Ω NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit FR151 – FR157 2 of 2 www.senocn.com Alldatasheet