Diode Semiconductor Korea M1J---M7J VOLTAGE RANGE: 50 ---- 1000V SURFACE MOUNT RECTIFIERS CURRENT: FEATURES 1.0 A SMAJ For surface mounted applications Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropnol and similar solvents The plastic material carries U/L recognition 94V-0 2.6± 0.15 1.95± 0.25 4.3± 0.1 5.6± 0.2 2.35± 0.1 MECHANICAL DATA Case: JEDEC SMAJ,molded plastic Terminals: Solder plated, solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode end Weight: 0.003 ounces, 0.084 grams Mounting position: Any 0.2± 0.05 0.203MAX 1.3± 0.2 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. M1J M2J M3J M4J M5J M6J M7J M1 M2 M3 M4 M5 M6 M7 VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current @TL=110 I(AV) 1.0 A I FSM 30 A Maximum instantaneous forward voltage at 1.0 A Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 VF 1.1 V IR 5.0 50 µA Typical junction capacitance (Note1) CJ 15 pF RθJA 75 TJ - 55 --- + 150 TSTG - 55 --- + 150 Device marking Maximum recurrent peak reverse voltage UNITS Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load TJ=125 Typical thermal resistance (Note2) Operating temperature range Storage temperature range NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Thermal resistance from junction to ambient /W www.diode.kr Diode Semiconductor Korea M1J--M7J FIG.1 -- FORWARD DERATING CURVE FIG.2 PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,AMPERES AVERAGE FORWARD CURRENT,AMPERES 1.2 Resistive or inductive Load 1.0 0.8 0.6 0.4 0.2X0.2(5.0X5.0mm) THICK COPPERPAND AREAS 0.2 0 0 20 40 60 80 100 120 140 160 10 0 O T L = 11 0 C 8 .3 m s S in g le H a lf S in e (J E D E C M e th o d ) 30 10 1 1 AMBIENT TEMPERATURE INSTANTANEOUS FORWARD CURRENT,AMPERES O TJ=25 C 1 0.6 0.8 1.0. 1.2 S 1.4 1.6 1.8 100 INSTANTANEOUS REVERSE CURRENT MICROAMPERES 10 0.01 0.4 2.0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS 10 O TJ=125 C 1 O TJ=75 C 0.1 TJ=25OC 0.01 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, FIG.5-TYPICAL JUNCTION CAPACITANCE FIG.6-TRANSIENT THERMAL IMPEDANCE 100 100 TRANSIENT THERMAL IMPEDANCE, /W JUNCTION CAPACITANCE pF 10 0 FIG.4 -- TYPICAL REVERSE CHARACTERISTICS 100 Puise Width=300 1%DUTY CYCLE 10 NUMBER OF CYCLES AT 60Hz FIG.3 -- TYPICAL FORWARD CHARACTERISTICS 0.1 W a ve 0 TJ=25 C f=1.0MHZ Vsig=50mVp-p 10 1 0.01 0.1 1 REVERSE VOLTAGE,VOLTS 10 100 10 1 0.1 0.01 UNITS MOUNTED on 0.20x0.20''(5.0X5.0mm)X0.5mil INCHES(0.013mm) THICK COPPERLAND AREAS 0.1 1 10 100 PULSE DURATON,SEC www.diode.kr