Diodes DMP32D5LFA-7B Esd protected Datasheet

DMP32D5LFA
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V(BR)DSS
RDS(on)
-30V
1.5 Ω @ VGS = -4.5V
2.5 Ω @ VGS = -2.5V
ID
TA = +25°C
-0.3 A
-0.2 A
Description
NEW PRODUCT
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
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0.4mm Ultra Low Profile Package for Thin Application
0.48mm2 Package Footprint, 16 Times Smaller Than SOT23
Low VGS(th), can be Driven Directly from a Battery
Low RDS(ON)
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ideal for high efficiency power management applications.
Mechanical Data
Applications
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Load Switch
Portable Applications
Power Management Functions
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Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.00043 grams (Approximate)
D
X2-DFN0806-3
S
G
D
G
Gate Protection
Diode
ESD PROTECTED
Bottom View
Top View
Package Pin Configuration
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP32D5LFA-7B
Notes:
Case
X2-DFN0806-3
Packaging
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
R2
R2= Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMP32D5LFA
Document Number: DS37119 Rev. 3 - 2
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October 2014
© Diodes Incorporated
DMP32D5LFA
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±8
V
ID
-0.3
-0.2
A
IDM
-1.5
A
Continuous Drain Current (Note 5) VGS = 4.5V
TA = +25°C
TA = +70°C
Steady
State
NEW PRODUCT
Pulsed Drain Current (Note 6)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Steady State
PD
360
mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RJA
353
°C/W
TJ, TSTG
-55 to +150
°C
Operating and Storage Temperature Range
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
-30
—
—
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
—
—
-100
nA
VDS = -24V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±10
µA
VGS = ±8V, VDS = 0V
VGS(th)
-0.4
—
-1.2
V
VDS = VGS, ID = -250μA
0.9
1.5
1.2
2.5
2.5
7.5
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
RDS(on)
—
VGS = -4.5V, ID = -200mA
Ω
VGS = -1.8V, ID = -50mA
VSD
—
—
-1.0
V
Input Capacitance
Ciss
—
40.9
—
pF
Output Capacitance
Coss
—
4.7
—
pF
Reverse Transfer Capacitance
Crss
—
3.6
—
pF
Total Gate Charge
Qg
—
0.7
—
nC
Gate-Source Charge
Qgs
—
0.1
—
nC
Gate-Drain Charge
Qgd
—
0.2
—
nC
Turn-On Delay Time
tD(on)
—
20
—
ns
Turn-On Rise Time
tr
—
40
—
ns
Turn-Off Delay Time
tD(off)
—
144
—
ns
tf
—
58
—
ns
Diode Forward Voltage (Note 8)
VGS = -2.5V, ID = -100mA
VGS = 0V, IS = -10mA
DYNAMIC CHARACTERISTICS (Note 8)
Turn-Off Fall Time
Notes:
VDS = -15V, VGS = 0V,
f = 1.0MHz
VGS = -4.5V, VDS = -15V,
ID = -200mA
VDS = -15V, ID = -200mA
VGS = -4.5V, RG = 6Ω
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP32D5LFA
Document Number: DS37119 Rev. 3 - 2
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October 2014
© Diodes Incorporated
DMP32D5LFA
1.0
1
VGS = -4.5V
VGS = -3.0V
VGS = -2.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
0.8
VGS = -4.0V
0.6
VGS = -2.0V
0.4
VGS = -1.8V
0.2
0.6
0.5
0.4
0.3
0
0.5
1
1.5
2
2.5
V DS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
TA = 25C
TA = 125C
TA = -55 C
0
0.5
1
1.5
2
2.5
3
3.5
4
V GS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
VGS = -1.8V
4
3
VGS = -2.5V
2
0
3
TA = 85C
T A = 150 C
0.1
5
R DS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.7
0.2
VGS = -1.5V
1
VGS = -4.5V
2
VGS = -4.5V
1.8
1.6
1.4
T A = 85C
1.2
1
TA = 25C
0.8
TA = -55C
0.6
0.4
0.2
0
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2
TA = 150C
TA = 125C
0
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
1
VGS = -4.5V
ID = -0.5A
1.6
1.4
1.2
VGS = -2.5V
ID = -0.2A
1
0.8
0.6
0.4
0.2
0
-50
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
2
1.8
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
0.8
0.0
VDS = -5.0V
0.9
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
DMP32D5LFA
Document Number: DS37119 Rev. 3 - 2
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VGS = -2.5V
ID = -0.2A
1.8
1.6
1.4
1.2
VGS = -4.5V
ID = -0.5A
1
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
October 2014
© Diodes Incorporated
DMP32D5LFA
1
1.6
0.8
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.8
1.4
1.2
-ID = 1mA
1
-I D = 250µA
0.8
0.6
0.4
0.6
0.4
TA= 150C
T A= 125 C
0.2
0.2
0
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
Ciss
VGS, GATE-SOURCE VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
TA= 25C
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
8
100
10
Coss
Crss
1
TA= 85C
TA= -55 C
0
-50
0
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
12
6
VDS = -15V
ID = -0.2A
4
2
0
0
0.2
0.4
0.6
0.8
1
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
1.2
10
R DS(on)
Limited
PW = 100µs
I D, DRAIN CURRENT (A)
NEW PRODUCT
2
1
DC
0.1
PW = 10s
PW = 1s
0.01
T J(m ax) = 150°C
PW = 100ms
T A = 25°C
PW = 10ms
V GS = 4.5V
Single Pulse
DUT on 1 * MRP Board
0.001
0.1
PW = 1ms
1
10
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DMP32D5LFA
Document Number: DS37119 Rev. 3 - 2
100
4 of 6
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A3
X2-DFN0806-3
Dim
Min Max
Typ
A
0.375 0.40
0.39
A1
0
0.05
0.02
A3
0.10
b
0.10 0.20
0.15
D
0.55 0.65
0.60
D1
0.35 0.45
0.40
E
0.75 0.85
0.80
E1
0.20 0.30
0.25
e
0.35
K
0.20
L
0.20 0.30
0.25
All Dimensions in mm
A1
A
NEW PRODUCT
Seating Plane
D
e
L (2x)
b (2x)
K
E
E1
Pin#1
R0.075
D1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Dimensions
C
X
X1
X2
Y
Y1
Y2
Y2
X (2x)
Y (2x)
Value
(in mm)
0.350
0.200
0.450
0.550
0.375
0.475
1.000
C
X2
DMP32D5LFA
Document Number: DS37119 Rev. 3 - 2
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DMP32D5LFA
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2014, Diodes Incorporated
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DMP32D5LFA
Document Number: DS37119 Rev. 3 - 2
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October 2014
© Diodes Incorporated
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