AO4707 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4707 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters. Standard Product AO8820 is Pb-free (meets ROHS & Sony 259 specifications). AO8820L is a Green Product ordering option. AO8820 and AO8820L are electrically identical. A S S G 1 2 3 4 8 7 6 5 VDS (V) = -30V ID = -8A (VGS = -10V) RDS(ON) < 33mΩ (VGS = -10V) RDS(ON) < 56mΩ (VGS = -4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.52V@3A D/K D/K D/K D/K Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Pulsed Drain Current A TA=70°C B Schottky reverse voltage TA=25°C Pulsed Forward Current ID IDM VKA Continuous Forward Current K S A G SOIC-8 Continuous Drain Current D A TA=70°C B MOSFET TA=70°C Power Dissipation ±20 -8 V -6.6 A -40 IF Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A C Maximum Junction-to-Lead Thermal Characteristics Schottky Steady-State Steady-State Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient Maximum Junction-to-Lead C A Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. PD TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units V IFM TA=25°C Schottky -30 30 5 V 3.5 A 3 30 3 2 2 -55 to 150 -55 to 150 °C Typ Max Units 24 40 54 21 75 30 36 40 67 25 75 30 W °C/W °C/W AO4707 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V 40 RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A gFS Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-8A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge -2 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-8A Units µA ±100 nA -2.4 V A 24.5 TJ=125°C VSD Max V VDS=-24V, VGS=0V IGSS IS Typ 33 33 41 56 mΩ -1 V -4.2 A 14.5 -0.76 mΩ S 920 pF 190 pF 122 pF 3.6 Ω 18.4 nC 9.3 nC 2.7 nC Qgd Gate Drain Charge 4.9 nC tD(on) Turn-On DelayTime 7.1 ns tr Turn-On Rise Time 3.4 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω 18.9 ns 8.4 ns IF=-8A, dI/dt=100A/µs 21.5 Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs 12.5 ns nC SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=3.0A 0.48 0.52 0.07 0.15 Irm VR=24V VR=24V, TJ=125°C 4.2 20 VR=24V, TJ=150°C 15 120 60 CT Maximum reverse leakage current Junction Capacitance VR=15V V mA pF A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev4: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4707 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 30 -4.5V -6V -5V 20 20 -4V -ID(A) -ID (A) VDS=-5V 25 15 -3.5V 10 15 10 5 125°C 5 VGS=-3V 25°C 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 60 1.60 RDS(ON) (mΩ) Normalized On-Resistance ID=-7.5A 50 VGS=-4.5V 40 30 VGS=-10V 20 10 0 5 10 15 20 25 1.40 1.20 VGS=-4.5V 1.00 0.80 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 80 70 1.0E+00 ID=-7.5A 60 1.0E-01 50 125°C -IS (A) RDS(ON) (mΩ) VGS=-10V 40 30 25°C 20 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 1.0E-05 10 0 1.0E-06 3 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4707 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=-15V ID=-8A 1250 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 0 0 4 8 12 16 0 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 15 25 30 30 100µs 0.1s 20 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 1ms 10ms 1.0 10 40 TJ(Max)=150°C, T A=25°C 10.0 5 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) 100.0 -ID (Amps) Crss 250 1s 20 10 10s DC 0.1 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 AO4707 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 600 10 125°C Capacitance (pF) IF (Amps) 1 0.1 25°C 0.01 f = 1MHz 500 400 300 200 100 0.001 0.0 0.2 0.4 0.6 0 0.8 0 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics VF (Volts) Figure 12: Schottky Forward Characteristics 0.7 1.0E-01 0.6 IF=5A Leakage Current (A) VF (Volts) 5 0.5 0.4 IF=3A 0.3 0.2 1.0E-02 1.0E-03 VR=24V 1.0E-04 1.0E-05 1.0E-06 0.1 0 25 50 75 100 125 Temperature (°C) 150 0 175 25 50 75 100 125 150 175 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 Alpha & Omega Semiconductor, Ltd. 0.01 0.1 1 T 10 100 1000