HP AT-41470 Up to 6 ghz low noise silicon bipolar transistor Datasheet

Up to 6 GHz Low Noise
Silicon␣ Bipolar Transistor
Technical Data
AT-41470
Features
• Low Noise Figure:
1.6 dB Typical at 2.0␣ GHz
3.0 dB Typical at 4.0␣ GHz
• High Associated Gain:
14.5 dB Typical at 2.0␣ GHz
10.5 dB Typical at 4.0␣ GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical fT
• Hermetic, Gold-ceramic
Microstrip Package
Description
Hewlett-Packard’s AT-41470 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41470 is housed in a hermetic,
high reliability gold-ceramic 70 mil
microstrip package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
This device is designed for use in
low noise, wideband amplifier,
mixer and oscillator applications
in the VHF, UHF, and microwave
frequencies. An optimum noise
match near 50 Ω at 1 GHz , makes
this device easy to use as a low
noise amplifier.
70 mil Package
The AT-41470 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
4-119
5965-8927E
AT-41470 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2,3]
Junction Temperature
Storage Temperature
Absolute
Maximum[1]
1.5
20
12
60
500
200
-65 to 200
Units
V
V
V
mA
mW
°C
°C
Thermal Resistance [2,4]:
θjc = 175°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 5.7 mW/°C for TC > 113°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ. Max.
|S21E|2
Insertion Power Gain; VCE = 8 V, IC = 25 mA
f = 2.0 GHz
f = 4.0 GHz
dB
12.0
6.5
P1 dB
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dBm
G1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 25 mA
1 dB Compressed Gain; VCE = 8 V, IC = 25 mA
19.0
18.5
15.0
10.5
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dB
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
fT
Gain Bandwidth Product: VCE = 8 V, IC = 25 mA
hFE
ICBO
IEBO
CCB
Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA
Collector Cutoff Current; VCB = 8 V
Emitter Cutoff Current; VEB = 1 V
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
Note:
1. For this test, the emitter is grounded.
4-120
dB
dB
13.0
GHz
—
µA
µA
pF
1.3
1.6
3.0
18.5
14.5
10.5
1.9
8.0
30
150
0.2
300
0.2
1.0
AT-41470 Typical Performance, TA = 25°C
GA
15
20
2.0 GHz
4.0 GHz
16
12
P1dB
2.0 GHz
8
9
4
NF50 Ω
3
NFO
0
0.5
1.0
2.0
2
G1 dB (dB)
6
6
0
3.0 4.0 5.0
8
4
4V
6V
10 V
G1dB
1
0
10
20
30
40
0
4.0 GHz
4.0 GHz 6
4
2.0 GHz
2
0
30
40
IC (mA)
Figure 4. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. VCE = 8 V.
NFO (dB)
8
16
MSG
|S21E|2 GAIN (dB)
GAIN (dB)
GA
20
40
20
30
10
30
35
12
0
20
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
40
NFO
10
IC (mA)
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. VCE = 8 V.
2.0 GHz
3
2
IC (mA)
16
GAIN (dB)
12
NFO
4
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10mA.
10
GA
13
4.0 GHz
FREQUENCY (GHz)
14
4V
14
12
NF (dB)
GAIN (dB)
18
10 V
6V
15
25
20
15
|S21E|2
MAG
10
1.0 GHz
12
2.0 GHz
8
4.0 GHz
4
5
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 25 mA.
4-121
0
0
10
20
30
40
IC (mA)
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
NFO (dB)
21
16
GAIN (dB)
24
P1 dB (dBm)
24
AT-41470 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 10 mA
Freq.
S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
.79
-37
28.4
26.27
157
0.5
.65
-120
22.3
13.05
110
1.0
.61
-155
17.1
7.17
88
1.5
.60
-172
13.9
4.93
76
2.0
.60
176
11.5
3.75
65
2.5
.61
169
9.7
3.06
59
3.0
.62
161
8.3
2.59
51
3.5
.61
154
7.0
2.24
42
4.0
.60
146
5.9
1.97
32
4.5
.60
137
4.9
1.77
24
5.0
.60
127
4.1
1.61
15
5.5
.61
115
3.4
1.47
6
6.0
.64
104
2.6
1.34
-4
dB
-39.2
-30.8
-28.9
-27.5
-26.4
-26.0
-24.7
-23.2
-21.4
-20.1
-19.5
-18.3
-17.4
S12
Mag.
.011
.029
.036
.042
.048
.050
.058
.069
.085
.099
.106
.121
.135
Ang.
57
40
41
46
46
58
61
63
62
59
59
56
53
Mag.
.94
.62
.52
.50
.50
.48
.49
.51
.52
.55
.57
.58
.57
S22
dB
S12
Mag.
Ang.
Mag.
Ang.
-40.9
-34.4
-30.2
-29.1
-27.1
-25.7
-23.6
-22.6
-21.7
-20.1
-18.9
-18.1
-17.3
.009
.019
.031
.035
.044
.052
.066
.074
.082
.099
.113
.124
.136
75
47
53
62
60
67
67
67
63
62
59
54
50
.85
.50
.44
.44
.44
.43
.44
.46
.48
.50
.52
.54
.53
-19
-30
-31
-34
-39
-39
-46
-55
-62
-68
-73
-78
-85
Ang.
-13
-30
-32
-36
-40
-41
-48
-56
-63
-69
-75
-80
-87
AT-41470 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 25 mA
Freq.
S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
.64
.61
.61
.60
.61
.61
.62
.62
.62
.61
.60
.61
.64
-62
-146
-170
177
167
163
156
150
142
134
123
112
102
32.5
23.7
18.1
14.7
12.3
10.4
9.0
7.7
6.6
5.6
4.8
4.0
3.2
42.11
15.31
8.00
5.42
4.10
3.32
2.81
2.44
2.13
1.91
1.73
1.59
1.45
147
100
83
72
62
58
50
41
32
24
15
6
-3
A model for this device is available in the DEVICE MODELS section.
AT-41470 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq.
GHz
NFO
dB
0.1
0.5
1.0
2.0
4.0
1.2
1.2
1.3
1.6
3.0
Γopt
Mag
.12
.11
.06
.21
.45
Ang
5
17
35
160
-150
4-122
RN/50
0.17
0.17
0.17
0.16
0.20
S22
70 mil Package Dimensions
.040
1.02
4
EMITTER
.020
.508
BASE
COLLECTOR
3
1
2
.004 ± .002
.10 ± .05
EMITTER
.070
1.70
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
Package marking is “414”
4-123
Similar pages