AMERICAN BRIGHT OPTOELECTRONICS CORP. Z-BEND DOMILED GaP 10mA BL-PDP-GRS-C10 • Feature: 1. Surface mount LED. 2. 120° viewing angle. 3. Small package outline (LxWxH) of 3.2 x 2.8 x 1.8 mm. 4. Qualified according to JEDEC moisture sensitivity Level 2. 5. Compatible to both IR reflow soldering and TTW soldering. • Package Dimension: Recommended Solder Pad V.4 Page: 1 of 5 AMERICAN BRIGHT OPTOELECTRONICS CORP. • Z-BEND DOMILED GaP 10mA BL-PDP-GRS-C10 Optical Characteristics: Part Number BL-PDP-GRS-C10 BIN G1 BIN G2 BIN H1 BIN H2 Chip Technology Color Luminous Intensity @ IF = 10mA Iv (mcd) GaP / 1.80 – 4.50 Green, 560nm 1.80 – 2.24 2.24 – 2.80 2.80 – 3.55 3.55 – 4.50 Forward voltage Chip Type @ If=10 mA. 2.05 V (typ.); 2.45 V (max) Viewing Angle GaP Reverse current, IR @ VR = 5V, (max) at 50% Iv 100 µA 120° Note: 1. Other luminous intensity groups are also available upon request. 2. Luminous intensity is measured with an accuracy of ±11%. 3. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. 4. An optional Vf binning is also available upon request. Binning scheme is as per following table. • Absolute Maximum Ratings: Parameter Maximum Value Unit DC forward current. 30 mA Peak pulse current; (tp ≤ 10 µs, Duty cycle = 0.005) 500 mA 5 V 100 °C Operating temperature. -40 … +100 °C Storage temperature. -40 … +100 °C 75 mW Reverse voltage. LED junction temperature. Power dissipation ( at room temperature ) • Vf Binning: Vf Bin @ 10mA Forward voltage (V) 01 1.25 … 1.55 02 1.55 … 1.85 03 1.85 … 2.15 04 2.15 … 2.45 Forward voltage, Vf is measured with an accuracy of ±0.1 V. V.4 Page: 2 of 5 AMERICAN BRIGHT OPTOELECTRONICS CORP. Z-BEND DOMILED GaP 10mA BL-PDP-GRS-C10 • Wavelength Grouping: Color Group BL-PDP; Pure Green Wavelength distribution (nm) Full 552.5 – 564.5 W 552.5 – 555.5 X 555.5 – 558.5 Y 558.5 – 561.5 Z 561.5 – 564.5 Wavelength is measured with an accuracy of ±1 nm. • Typical electro-optical characteristics curves: Fig.1 Relative luminous intensity vs. forward current. Fig.2 Forward current vs. forward voltage. Forward Current vs. Forward Voltage 4.0 35 3.5 Forward Current (mA) Relative intensity. Normalized at 10 mA. Intensity vs. DC Forw ard Current 3.0 2.5 2.0 1.5 1.0 0.5 30 25 20 15 10 5 0 0.0 0 5 10 15 20 25 30 1.0 35 1.2 1.4 Fig.3 Radiation pattern. 30° 20° 10° 1.6 1.8 2.0 2.2 2.4 2.6 Forward Voltage (V) FORW ARD CURRENT (m A) Fig.4 Maximum forward current vs. temperature. 0° 35 1.0 30 40° 0.8 50° 60° 70° 0.6 0.4 20 15 10 5 0.2 0 80° 90° Forward Current, If 25 0 0 10 20 30 40 50 60 70 80 90 Ambient Temperature V.4 Page: 3 of 5 100 AMERICAN BRIGHT OPTOELECTRONICS CORP. Z-BEND DOMILED GaP 10mA BL-PDP-GRS-C10 Fig.6 Recommended IR-reflow Soldering Profile (acc. to IPC 9501). Classification Reflow Profile (JEDEC J-STD-020B) 275 250 Temperature (oC) 225 200 235-240oC 10 30s Ramp-up 3 oC/sec o 183 C 175 60-150s 150 125 Rampdown 100 Preheat 60- 75 50 360s max 25 0 50 100 150 200 Time (sec) Fig.7 Recommended TTW Soldering Profile (acc. to CECC 00802). V.4 Page: 4 of 5 AMERICAN BRIGHT OPTOELECTRONICS CORP. Z-BEND DOMILED GaP 10mA BL-PDP-GRS-C10 • Taping And Orientation: Reels come in quantity of 2000 units. Reel diameters is 180 mm V.4 Page: 5 of 5