Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 1/9 CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTN22N20J3 BVDSS 200V ID VGS=10V, ID=11A 22A 86mΩ VGS=4.5V, ID=5A 93mΩ RDSON(TYP) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTN22N20J3 TO-252 G G：Gate D：Drain D S S：Source Ordering Information Device MTN22N20J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN22N20J3 CYStek Product Specification Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=1.6mH, ID=20A, RG=25Ω Repetitive Avalanche Energy@ L=0.1mH (Note 2) Total Power Dissipation @TC=25℃ Total Power Dissipation @TA=25℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS ID ID IDM IAS EAS EAR 200 ±30 22 15 40 20 320 4.6 107 1.14 -55~+175 Pd Tj, Tstg Unit V A mJ W °C *2. Duty cycle ≤ 1% Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 1.4 110 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) *1 GFS *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 MTN22N20J3 Min. Typ. Max. Unit Test Conditions 200 2 - 3 86 93 15 4 ±100 1 25 115 125 - V V nA S VGS=0, ID=250μA VDS =VGS, ID=250μA VGS=±30, VDS=0 VDS =200V, VGS =0 VDS =160V, VGS =0, TJ=125°C VGS =10V, ID=11A VGS =4.5V, ID=5A VDS =15V, ID=11A - 34 7 14 36 36 122 - nC VDS=160V, ID=20A, VGS=10V ns VDS=100V, ID=20A, VGS=10V, RG=25Ω μA mΩ CYStek Product Specification CYStech Electronics Corp. tf *1, 2 Ciss Coss Crss Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 60 1496 154 56 - - 0.84 120 400 20 40 1.3 - pF Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 3/9 VGS=0V, VDS=25V, f=1MHz A V ns nC IF=IS, VGS=0V IF=20A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTN22N20J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 40 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V,6V ID, Drain Current (A) 35 30 VGS=5V 25 20 15 10 5 1.2 1 0.8 0.6 ID=250μA, VGS=0V VGS=4V 0.4 0 0 2 4 6 8 VDS , Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1000 VGS=4.5V 100 VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 200 ID=11A R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 160 120 80 40 2 VGS=10V, ID=11A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 85mΩ 0 0 0 MTN22N20J3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 ID=250μA 1.2 1 0.8 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current 100 140 10 VDS=160V VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 60 Gate Charge Characteristics 100 10 1 VDS=15V 0.1 Ta=25°C Pulsed VDS=100V 8 6 4 2 ID=20A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 0 10 5 10 15 20 25 30 Qg, Total Gate Charge(nC) 35 40 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 25 RDSON Limited 100μs 1ms 10 10ms 100ms 1s 1 DC TC=25°C, Tj=175°C VGS=10V, θJC=1.4°C/W Single Pulse 0.1 ID, Maximum Drain Current(A) 100 ID, Drain Current(A) 20 Tj, Junction Temperature(°C) 20 15 10 5 VGS=10V, RθJC=1.4°C/W 0 0.01 0.1 \ MTN22N20J3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 6/9 Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 120 70 ID, Drain Current(A) PD, Power Dissipation(W) VDS=20V 60 50 40 30 20 100 80 60 40 20 10 0 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 12 0 25 50 75 100 125 150 TC, Case Temperature(℃) 175 200 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.1 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.4°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTN22N20J3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTN22N20J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN22N20J3 CYStek Product Specification Spec. No. : C840J3 Issued Date : 2012.07.02 Revised Date : 2013.12.26 Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name 22N20 Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN22N20J3 CYStek Product Specification