Infineon BTN7960 High current pn half bridge novalithic Datasheet

Data Sheet, Rev. 1.1, Nov. 2007
BTN7960
High Current PN Half Bridge
NovalithIC™
Automotive Power
High Current PN Half Bridge
BTN7960
Table of Contents
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
2.1
2.2
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
3.1
3.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
4.1
4.2
4.3
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
5.1
5.2
5.2.1
5.2.2
5.2.3
5.3
5.3.1
5.3.2
5.3.3
5.3.4
5.3.5
5.3.6
5.4
5.4.1
5.4.2
5.4.3
5.4.4
5.4.5
5.4.6
Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6
6.1
6.2
6.3
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Half-bridge Configuration Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
22
22
22
23
7
7.1
7.2
7.3
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PG-TO263-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PG-TO220-7-11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PG-TO220-7-12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24
24
25
26
8
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
2
6
6
8
8
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
NovalithIC™
1
BTN7960B
BTN7960P
BTN7960S
Overview
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
Path resistance of max. 30.5 mΩ @ 150 °C (typ. 16 mΩ @ 25 °C)
High Side: max. 12.8 mΩ @ 150 °C (typ. 7 mΩ @ 25 °C)
Low Side: max. 17.7 mΩ @ 150 °C (typ. 9 mΩ @ 25 °C)
(for BTN7960B (SMD))
Low quiescent current of typ. 7 μA @ 25 °C
PWM capability of up to 25 kHz combined with active freewheeling
Switched mode current limitation for reduced power dissipation
in overcurrent
Current limitation level of 33 A min. / 47 A typ. (low side)
Status flag diagnosis with current sense capability
Overtemperature shut down with latch behaviour
Overvoltage lock out
Undervoltage shut down
Driver circuit with logic level inputs
Adjustable slew rates for optimized EMI
Green Product (RoHS compliant)
AEC Qualified
PG-TO263-7-1
Description
The BTN7960 is a integrated high current half bridge for motor
drive applications. It is part of the NovalithIC™ family containing one
p-channel highside MOSFET and one n-channel lowside MOSFET with
an integrated driver IC in one package. Due to the p-channel highside
switch the need for a charge pump is eliminated thus minimizing EMI.
Interfacing to a microcontroller is made easy by the integrated driver IC
which features logic level inputs, diagnosis with current sense, slew rate
adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit.
PG-TO220-7-11
The BTN7960 provides a cost optimized solution for protected high
current PWM motor drives with very low board space consumption.
PG-TO220-7-12
Type
Package
Marking
BTN7960B
PG-TO263-7-1
BTN7960B
BTN7960P
PG-TO220-7-11
BTN7960P
BTN7960S
PG-TO220-7-12
BTN7960S
Data Sheet
3
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Block Diagram
2
Block Diagram
The BTN7960 is part of the NovalithIC™ family containing three separate chips in one package: One p-channel
highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a integrated high current
half-bridge. All three chips are mounted on one common lead frame, using the chip on chip and chip by chip
technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to
the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a
microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current
sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage,
undervoltage, overcurrent and short circuit. The BTN7960 can be combined with other BTN7960 to form H-bridge
and 3-phase drive configurations.
2.1
Block Diagram
VS
Undervolt.
detection
Overvolt.
detection
Current
Sense
Overcurr.
Detection
HS
Overtemp.
detection
Gate Driver
HS
IS
Digital Logic
LS off
IN
OUT
HS off
Gate Driver
LS
INH
Overcurr.
Detection
LS
Slewrate
Adjustment
SR
GND
Figure 1
Block Diagram
2.2
Terms
Following figure shows the terms used in this data sheet.
VS
I VS , -I D( HS)
I IN
IN
V IN
VS
IINH
I OUT , I L
INH
V INH
VDS (HS )
O UT
ISR
VSD (LS )
V OUT
SR
VSR
I IS
IS
V IS
G ND
IGND , I D( LS)
Figure 2
Data Sheet
Terms
4
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment
8
8
8
1234 5 67
1234567
1 23 45 6 7
Figure 3
Pin Assignment BTN7960B, BTN7960P and BTN7960S (top view)
3.2
Pin Definitions and Functions
Pin
Symbol
I/O
Function
1
GND
-
Ground
2
IN
I
Input
Defines whether high- or lowside switch is activated
3
INH
I
Inhibit
When set to low device goes in sleep mode
4,8
OUT
O
Power output of the bridge
5
SR
I
Slew Rate
The slew rate of the power switches can be adjusted by connecting
a resistor between SR and GND
6
IS
O
Current Sense and Diagnostics
7
VS
-
Supply
Bold type: pin needs power wiring
Data Sheet
5
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings 1)
Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Max.
VS
VIN
VINH
VSR
VS -VIS
VIS
-0.3
45
V
–
-0.3
5.3
V
–
-0.3
1.0
V
–
-0.3
45
V
–
-20
45
V
–
ID(HS)
ID(LS)
-44
44
A
TC < 85°C
switch active
-40
40
A
TC < 125°C
switch active
-90
90
A
TC < 85°C
tpulse = 10ms
-85
85
A
Voltages
4.1.1
Supply Voltage
4.1.2
Logic Input Voltage
4.1.3
Voltage at SR Pin
4.1.4
Voltage between VS and IS Pin
4.1.5
Voltage at IS Pin
Currents
4.1.6
4.1.7
HS/LS Continuous Drain Current2)
HS/LS Pulsed Drain Current2)
ID(HS)
ID(LS)
single pulse
TC < 125°C
tpulse = 10ms
single pulse
4.1.8
HS/LS PWM Current
2)
ID(HS)
ID(LS)
-55
55
A
TC < 85°C
f = 1kHz, DC = 50%
-50
50
A
TC < 125°C
f = 1kHz, DC = 50%
-60
60
A
TC < 85°C
f = 20kHz, DC = 50%
-54
54
A
TC < 125°C
f = 20kHz, DC = 50%
-40
150
°C
–
-55
150
°C
–
kV
HBM3)
Temperatures
4.1.9
Junction Temperature
4.1.10
Storage Temperature
Tj
Tstg
ESD Susceptibility
4.1.11
ESD Susceptibility HBM
IN, INH, SR, IS
OUT, GND, VS
VESD
-2
-6
2
6
1) Not subject to production test, specified by design
2) Maximum reachable current may be smaller depending on current limitation level
3) ESD susceptibility, HBM according to EIA/JESD22-A114-B (1.5 kΩ, 100 pF)
Data Sheet
6
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
General Product Characteristics
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Maximum Single Pulse Current
100
90
80
|I max | [A]
70
60
50
40
30
20
10
0
1,0E-03
1,0E-02
1,0E-01
1,0E+00
1,0E+01
t pulse[s]
Figure 4
BTN7960 Maximum Single Pulse Current (TC < 85°C)
This diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The
maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited
due to thermal protection of the device.
Data Sheet
7
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
General Product Characteristics
4.2
Pos.
Functional Range
Parameter
Symbol
VS(nom)
4.2.1
Supply Voltage Range for
Nominal Operation
4.2.2
Extended Supply Voltage Range for VS(ext)
Operation
4.2.3
Junction Temperature
Tj
Limit Values
Unit
Conditions
Min.
Max.
8
18
V
–
5.5
28
V
Parameter
Deviations possible
-40
150
°C
–
Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the Electrical Characteristics table.
4.3
Pos.
Thermal Resistance
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Conditions
4.3.1
Thermal Resistance
Junction-Case, Low Side Switch1)
Rthjc(LS) = ΔTj(LS)/ Pv(LS)
RthJC(LS) –
1.3
1.8
K/W
–
4.3.2
Thermal Resistance
Junction-Case, High Side Switch1)
Rthjc(HS) = ΔTj(HS)/ Pv(HS)
RthJC(HS) –
0.6
0.9
K/W
–
4.3.3
Thermal Resistance
Junction-Case, both Switches1)
Rthjc = max[ΔTj(HS), ΔTj(LS)] /
(Pv(HS) + Pv(LS))
RthJC
–
0.7
1.0
K/W
–
4.3.4
Thermal Resistance
Junction-Ambient1)
RthJA
–
20
–
K/W
2)
1) Not subject to production test, specified by design
2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu, 2 x 35 µm Cu).
Data Sheet
8
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Block Description and Characteristics
5
Block Description and Characteristics
5.1
Supply Characteristics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, IL = 0 A, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
–
2
3
Unit
Conditions
mA
VINH = 5 V
VIN = 0 V or 5 V
RSR = 0 Ω
General
5.1.1
IVS(on)
Supply Current
DC-mode
normal operation
(no fault condition)
5.1.2
IVS(off)
Quiescent Current
–
7
12
µA
–
–
65
µA
VINH = 0 V
VIN = 0 V or 5 V
Tj < 85 °C
VINH = 0 V
VIN = 0 V or 5 V
I V S (o f f ) [µA]
25
20
15
10
5
0
-40
0
40
80
120
160
T [°C]
Figure 5
Data Sheet
Typical Quiescent Current vs. Junction Temperature
9
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Block Description and Characteristics
5.2
Power Stages
The power stages of the BTN7960 consist of a p-channel vertical DMOS transistor for the high side switch and a
n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in a
separate top chip. Both switches can be operated up to 25 kHz, allowing active freewheeling and thus minimizing
power dissipation in the forward operation of the integrated diodes.
The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj. The
typical on state resistance characteristics are shown in Figure 6.
Low Side Switch
25
25
RON(LS ) [mΩ]
RON(HS) [mΩ ]
High Side Switch
20
15
Tj = 150°C
10
20
15
Tj = 150°C
10
Tj = 25°C
Tj = 25°C
Tj = -40°C
Tj = -40°C
5
5
4
8
12
16
20
24
4
28
8
12
Data Sheet
20
24
28
VS [V]
VS [V]
Figure 6
16
Typical ON State Resistance vs. Supply Voltage (BTN7960B)
10
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Block Description and Characteristics
5.2.1
Power Stages - Static Characteristics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Unit
Conditions
mΩ
IOUT = 9 A; VS = 13.5 V
Max.
High Side Switch - Static Characteristics
5.2.1
ON State High Side Resistance1) RON(HS)
–
–
7
10
–
12.8
BTN7960B
Tj = 25 °C
Tj = 150 °C
–
–
7.8
11.2
–
14
Tj = 25 °C
Tj = 150 °C
–
–
7.1
10.2
–
13
–
–
1
µA
–
–
50
µA
–
–
–
0.9
0.8
0.6
1.5
1.1
0.8
Tj = 25 °C
Tj = 150 °C
VINH = 0 V; VOUT = 0 V
Tj < 85 °C
VINH = 0 V; VOUT = 0 V
Tj = 150 °C
IOUT = -9 A
Tj = -40 °C
Tj = 25 °C
Tj = 150 °C
BTN7960P
BTN7960S
5.2.2
5.2.3
Leakage Current High Side
IL(LKHS)
Reverse Diode Forward-Voltage VDS(HS)
High Side2)
V
Low Side Switch - Static Characteristics
5.2.4
ON State Low Side Resistance1) RON(LS)
mΩ
–
–
9
14
IOUT = -9 A; VS = 13.5 V
BTN7960B
–
17.7
Tj = 25 °C
Tj = 150 °C
BTN7960P
Tj = 25 °C
Tj = 150 °C
–
–
9.8
15.2
–
18.9
–
–
9.1
14.2
–
17.9
–
–
1
µA
–
–
10
µA
BTN7960S
5.2.5
5.2.6
Leakage Current Low Side
IL(LKLS)
Reverse Diode Forward-Voltage VSD(LS)
Low Side2)
V
–
–
–
0.9
0.8
0.7
1.5
1.1
0.9
Tj = 25 °C
Tj = 150 °C
VINH = 0 V; VOUT = VS
Tj < 85 °C
VINH = 0 V; VOUT = VS
Tj = 150 °C
IOUT = 9 A
Tj = -40 °C
Tj = 25 °C
Tj = 150 °C
1) Specified RON value is related to normal soldering points; RON values is specified for BTN7960B: pin 1,7 to pin 8 (tab,
backside) and for BTN7960P/BTN7960S: pin 1,7 to pin4
2) Due to active freewheeling, diode is conducting only for a few µs, depending on RSR
Data Sheet
11
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Block Description and Characteristics
5.2.2
Switching Times
IN
t dr(HS )
t r(HS )
t df (HS )
tf (HS )
t
VOUT
90%
90%
ΔVOUT
ΔVOUT
10%
10%
t
Figure 7
Definition of switching times high side (Rload to GND)
IN
tdf (LS )
t f (LS )
tdr(LS )
tr(LS )
t
VOUT
90%
90%
ΔV OUT
ΔVOUT
10%
10%
t
Figure 8
Definition of switching times low side (Rload to VS)
Due to the timing differences for the rising and the falling edge there will be a slight difference between the length
of the input pulse and the length of the output pulse. It can be calculated using the following formulas:
•
•
ΔtHS = (tdr(HS) + 0.5 tr(HS)) - (tdf(HS) + 0.5 tf(HS))
ΔtLS = (tdf(LS) + 0.5 tf(LS)) - (tdr(LS) + 0.5 tr(LS)).
Data Sheet
12
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Block Description and Characteristics
5.2.3
Power Stages - Dynamic Characteristics
VS = 13.5 V, Tj = -40 °C to +150 °C, Rload = 2 Ω, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Unit
Conditions
Max.
High Side Switch Dynamic Characteristics
5.2.7
5.2.8
5.2.9
5.2.10
5.2.11
Rise-Time of HS
Slew Rate HS on1)
Switch on Delay Time HS
Fall-Time of HS
Slew Rate HS off1)
tr(HS)
ΔVOUT/
tr( HS)
µs
0.5
–
2
1
2
5
1.6
–
11
6.8
–
1
10.8
5.4
2.2
21.6
–
5.4
1.5
–
5
3.1
4.4
14
4.5
–
25
0.5
–
2
1
2
5
1.6
–
11
10.8
5.4
2.2
21.6
–
5.4
V/µs
tdr(HS)
Switch off Delay Time HS
tf(HS)
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
-ΔVOUT/
tf(HS)
6.8
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
V/µs
tdf(HS)
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
1
2.4
3
–
3.4
–
3
10
17
1) Not subject to production test, calculated value; |ΔVOUT|/ tr(HS) or |-ΔVOUT|/ tf(HS)
Data Sheet
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
–
1
5.2.12
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
13
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Block Description and Characteristics
VS = 13.5 V, Tj = -40 °C to +150 °C, Rload = 2 Ω, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Unit
Conditions
Max.
Low Side Switch Dynamic Characteristics
5.2.13
5.2.14
Rise-Time of LS
Slew Rate LS switch off1)
tr(LS)
5.2.16
5.2.17
Switch off Delay Time LS
Fall-Time of LS
Slew Rate LS switch on1)
0.4
–
2
0.9
2
5
1.4
–
11
7.7
–
1
12
5.4
2.2
27
–
5.4
0.6
–
2
1.3
2.2
5
2
–
11
0.5
–
2
1
2
5
1.5
–
11
10.8
5.4
2.2
21.6
–
5.4
ΔVOUT/
tr(LS)
5.2.15
µs
V/µs
tdr(LS)
Switch on Delay Time LS
tf(LS)
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
-ΔVOUT/
tf(LS)
7.2
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
V/µs
tdf(LS)
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
2
4
5
–
5.6
–
5
15
25
1) Not subject to production test, calculated value; |ΔVOUT|/ tr(LS) or |-ΔVOUT|/ tf(LS)
Data Sheet
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
µs
–
1
5.2.18
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
14
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Block Description and Characteristics
5.3
Protection Functions
The device provides integrated protection functions. These are designed to prevent IC destruction under fault
conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are not to be used for continuous or repetitive operation, with the exception of the current
limitation (Chapter 5.3.4). In a fault condition the BTN7960 will apply the highest slew rate possible independent
of the connected slew rate resistor. Overvoltage, overtemperature and overcurrent are indicated by a fault current
IIS(LIM) at the IS pin as described in the paragraph “Status Flag Diagnosis With Current Sense Capability” on
Page 19 and Figure 12.
In the following the protection functions are listed in order of their priority. Overvoltage lock out overrides all other
error modes.
5.3.1
Overvoltage Lock Out
To assure a high immunity against overvoltages (e.g. load dump conditions) the device shuts the lowside MOSFET
off and turns the highside MOSFET on, if the supply voltage is exceeding the over voltage protection level VOV(OFF).
The IC operates in normal mode again with a hysteresis VOV(HY) if the supply voltage decreases below the switchon voltage VOV(ON). In H-bridge configuration, this behavior of the BTN7960 will lead to freewheeling in highside
during over voltage.
5.3.2
Undervoltage Shut Down
To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (output is tri-state), if the
supply voltage drops below the switch-off voltage VUV(OFF). The IC becomes active again with a hysteresis VUV(HY)
if the supply voltage rises above the switch-on voltage VUV(ON).
5.3.3
Overtemperature Protection
The BTN7960 is protected against overtemperature by an integrated temperature sensor. Overtemperature leads
to a shut down of both output stages. This state is latched until the device is reset by a low signal with a minimum
length of treset at the INH pin, provided that its temperature has decreased at least the thermal hysteresis ΔT in the
meantime.
Repetitive use of the overtemperature protection impacts lifetime.
5.3.4
Current Limitation
The current in the bridge is measured in both switches. As soon as the current in forward direction in one switch
(high side or low side) is reaching the limit ICLx, this switch is deactivated and the other switch is activated for tCLS.
During that time all changes at the IN pin are ignored. However, the INH pin can still be used to switch both
MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the IS pin is reset after 2 * tCLS.
Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by EMI coming from the
motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the
effective current limitation level ICLx depends on the slew rate of the load current dI/dt as shown in Figure 10.
Data Sheet
15
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Block Description and Characteristics
IL
tCLS
ICLx
ICLx 0
t
Figure 9
Timing Diagram Current Limitation (Inductive Load)
High Side Switch
Low Side Switch
80
80
Tj = -40°C
75
Tj = 25°C
I C L L [A]
I C L H [A]
75
70
Tj = 150°C
65
60
70
65
60
ICLH0
55
55
50
50
45
45
40
40
ICLL0
Tj = 25°C
Tj = -40°C
Tj = 150°C
35
35
0
500
1000
1500
0
2000
500
dIL/dt [A/ms]
Figure 10
Data Sheet
1000
1500
2000
dIL/dt [A/ms]
Typical Current Limitation Level vs. Current Slew Rate dI/dt
16
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Block Description and Characteristics
Low Side Switch
High Side Switch
70
I C L L [ A]
I C L H [ A]
70
Tj = -40°C
65
Tj = 25°C
Tj = 150°C
65
60
60
55
55
50
50
Tj = -40°C
Tj = 25°C
Tj = 150°C
45
45
40
40
4
6
8
10
12
14
16
18
4
20
6
8
10
14
16
18
20
VS [V]
VS [V]
Figure 11
12
Typical Current Limitation Detection Levels vs. Supply Voltage
In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation.
This method of limiting the current has the advantage of greatly reduced power dissipation in the BTN7960
compared to driving the MOSFET in linear mode. Therefore it is possible to use the current limitation for a short
time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor
start up). However, the regular use of the current limitation is allowed as long as the specified maximum junction
temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device.
5.3.5
Short Circuit Protection
The device is short circuit protected against
•
•
•
output short circuit to ground
output short circuit to supply voltage
short circuit of load
The short circuit protection is realized by the previously described current limitation in combination with the overtemperature shut down of the device.
Data Sheet
17
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Block Description and Characteristics
5.3.6
Electrical Characteristics - Protection Functions
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Unit
Conditions
Typ.
Max.
VUV(ON) –
VUV(OFF) 4.0
VUV(HY) –
–
5.5
V
–
5.4
V
VS increasing
VS decreasing
0.2
–
V
–
VOV(ON) 27.8
VOV(OFF) 28
VOV(HY) –
–
–
V
–
30
V
VS decreasing
VS increasing
0.2
–
V
–
Under Voltage Shut Down
5.3.1
Switch-ON Voltage
5.3.2
Switch-OFF Voltage
5.3.3
ON/OFF hysteresis
Over Voltage Lock Out
5.3.4
Switch-ON Voltage
5.3.5
Switch-OFF Voltage
5.3.6
ON/OFF hysteresis
Current Limitation
5.3.7
Current Limitation Detection level ICLH0
High Side
45
62
80
A
VS = 13.5 V
5.3.8
Current Limitation Detection level ICLL0
Low Side
33
47
60
A
VS = 13.5 V
tCLS
70
115
210
µs
VS = 13.5 V
Current Limitation Timing
5.3.9
Shut OFF Time for HS and LS
Thermal Shut Down
5.3.10
Thermal Shut Down Junction
Temperature
TjSD
155
175
200
°C
–
5.3.11
Thermal Switch ON Junction
Temperature
TjSO
150
–
190
°C
–
5.3.12
Thermal Hysteresis
ΔT
–
7
–
K
–
5.3.13
Reset Pulse at INH Pin (INH low) treset
4
–
–
µs
–
Data Sheet
18
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Block Description and Characteristics
5.4
Control and Diagnostics
5.4.1
Input Circuit
The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the
integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In this condition one of
the two power switches is switched on depending on the status of the IN pin. To deactivate both switches, the INH
pin has to be set to low. No external driver is needed. The BTN7960 can be interfaced directly to a microcontroller,
as long as the maximum ratings in Chapter 4.1 are not exceeded.
5.4.2
Dead Time Generation
In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same
time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC, generating a so
called dead time between switching off one MOSFET and switching on the other. The dead time generated in the
driver IC is automatically adjusted to the selected slew rate.
5.4.3
Adjustable Slew Rate
In order to optimize electromagnetic emission, the switching speed of the MOSFETs is adjustable by an external
resistor. The slew rate pin SR allows the user to optimize the balance between emission and power dissipation
within his own application by connecting an external resistor RSR to GND.
5.4.4
Status Flag Diagnosis With Current Sense Capability
The status pin IS is used as a combined current sense and error flag output. In normal operation (current sense
mode), a current source is connected to the status pin, which delivers a current proportional to the forward load
current flowing through the active high side switch. If the high side switch is inactive or the current is flowing in the
reverse direction no current will be driven except for a marginal leakage current IIS(LK). The external resistor RIS
determines the voltage per output current. E.g. with the nominal value of 8.5k for the current sense ratio
kILIS = IL / IIS, a resistor value of RIS = 1 kΩ leads to VIS = (IL / 8.5 A)V. In case of a fault condition the status output
is connected to a current source which is independent of the load current and provides IIS(lim). The maximum
voltage at the IS pin is determined by the choice of the external resistor and the supply voltage. In case of current
limitation the IIS(lim) is activated for 2 * tCLS.
Normal operation:
current sense mode
Fault condition:
error flag mode
VS
VS
ESD-ZD
IIS~ ILoad
IIS(lim)
Figure 12
Data Sheet
ESD-ZD
IS
Sense
output
logic
IIS~ ILoad
RIS VIS
IIS(lim)
Sense
output
logic
IS
R IS V IS
Sense Current and Fault Current
19
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Block Description and Characteristics
IIS
[mA]
IIS(lim)
er
low
i
kil
hi
e
alu
v
s
u
val
lis
r ki
ghe
e
Current Sense Mode
(High Side)
Error Flag Mode
ICLx
Figure 13
Sense Current vs. Load Current
5.4.5
Truth Table
Device State
Inputs
Outputs
[A]
Mode
INH
IN
HSS
0
X
OFF
OFF
0
Stand-by mode
1
0
OFF
ON
0
LSS active
1
1
ON
OFF
CS
HSS active
Over-Voltage (OV)
X
X
ON
OFF
1
Shut-down of LSS,
HSS activated,
error detected
Under-Voltage (UV)
X
X
OFF
OFF
0
UV lockout
Overtemperature or Short
Circuit of HSS or LSS
0
X
OFF
OFF
0
Stand-by mode, reset of latch
1
X
OFF
OFF
1
Shut-down with latch, error detected
Current Limitation Mode
1
1
OFF
ON
1
Switched mode, error detected1)
1
0
ON
OFF
1
Switched mode, error detected1)
Normal Operation
1) Will return to normal operation after
LSS
IL
IS
tCLS; Error signal is reset after 2*tCLS (see Chapter 5.3.4)
Inputs
Switches
Status Flag IS
0 = Logic LOW
OFF = switched off
CS = Current sense mode
1 = Logic HIGH
ON = switched on
1 = Logic HIGH (error)
X = 0 or 1
Data Sheet
20
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Block Description and Characteristics
5.4.6
Electrical Characteristics - Control and Diagnostics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit
Conditions
Control Inputs (IN and INH)
5.4.1
High level Voltage
INH, IN
VINH(H)
VIN(H)
–
–
1.75
1.6
2.15
2
V
–
5.4.2
Low level Voltage
INH, IN
VINH(L)
VIN(L)
1.1
1.4
–
V
–
5.4.3
Input Voltage hysteresis
VINHHY
VINHY
–
–
350
200
–
–
mV
–
5.4.4
Input Current high level
–
30
150
µA
VIN = VINH = 5.3 V
5.4.5
Input Current low level
IINH(H)
IIN(H)
IINH(L)
IIN(L)
–
25
125
µA
VIN = VINH = 0.4 V
103
RIS = 1 kΩ
IL = 30 A
IL = 15 A
IL = 5 A
VS = 13.5 V
RIS = 1kΩ
Current Sense
5.4.6
Current Sense ratio in static oncondition
kILIS = IL / IIS
kILIS
6
5.5
5
8.5
8.5
8.5
11
11.5
12.5
4
5
6.5
mA
5.4.7
Maximum analog Sense Current, IIS(lim)
Sense Current in fault Condition
5.4.8
Isense Leakage current
IISL
–
–
1
µA
5.4.9
Isense Leakage current,
active high side switch
IISH
–
1
80
µA
Data Sheet
21
VIN = 0 V or
VINH = 0 V
VIN = VINH = 5 V
IL = 0 A
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Application Information
6
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
6.1
Application Example
Microcontroller
XC866
Voltage Regulator
I/O
WO
Reset
Vdd
RO
Q
D
CQ
22µF
I/O
I/O
I/O
RIN1 RINH1
10kΩ 10kΩ
I/O
Vss
TLE
4278G
I
CS
470µF
GND
CD
47nF
BTN7960
VS
IN
OUT
CSc1
470nF
CSc2
470nF
M
VS
RSR1
0..51kΩ
VS
R1
1kΩ
IPB
100P03P3L
-04
RINH2
10kΩ
RIN2
10kΩ
INH
IN
OUT
IS
SR
SR
RIS12
470Ω
DZ 1
10V
BTN7960
INH
IS
Reverse Polarity
Protection
GND
GND
RSR2
0..51kΩ
High Current H-Bridge
Figure 14
Application Example: H-Bridge with two BTN7960
Note: This is a simplified example of an application circuit. The function must be verified in the real application.
6.2
Layout Considerations
Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances
have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The
BTN7960 has no separate pin for power ground and logic ground. Therefore it is recommended to assure that the
offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of the
device (GND / pin 1) is minimized. If the BTN7960 is used in a H-bridge or B6 bridge design, the voltage offset
between the GND pins of the different devices should be small as well.
A ceramic capacitor from VS to GND close to each device is recommended to provide current for the switching
phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable value for this
capacitor would be about 470 nF.
The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series
resistors in the range of 10 kΩ.
Data Sheet
22
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Application Information
6.3
Half-bridge Configuration Considerations
Please note that, if the BTN7960 is used in a half-bridge configuration with the load connected between OUT and
GND and the supply voltage is exceeding the Overvoltage Switch-OFF level VOV(OFF), the implemented
“Overvoltage Lock Out” feature leads to automatically turning on the high side switch, while turning off the low
side switch, and therefore connecting the load to VS; independently of the current IN- and INH-pin signals (see
also “Truth Table” on Page 20). This will lead to current flowing through the load, if not otherwise configured.
It shall be insured that the power dissipated in the NovalithIC™ does not exceed the maximum ratings. For further
explanations see the application note “BTN79x0 Over Voltage (OV) Operation”.
Microcontroller
XC866
Voltage Regulator
I/O
WO
Reset
Vdd
RO
Q
D
CQ
22µF
I/O
I/O
RIN
10kΩ
I/O
RINH
10kΩ
Vss
TLE
4278G
Reverse Polarity
Protection
I
DZ 1
10V
CS
470µF
GND
CD
47nF
R1
1kΩ
VS
IPB
100P03P3L04
BTN7960
INH
VS
IN
IS
OUT
CSc
470nF
M
SR
RIS
1kΩ
RSR
0..51kΩ
GND
High Current Half-Bridge
Figure 15
Application Example: Half-Bridge with a BTN7960 (Load to GND)
Note: This is a simplified example of an application circuit. The function must be verified in the real application.
Data Sheet
23
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Package Outlines
7
Package Outlines
7.1
PG-TO263-7-1
4.4
10 ±0.2
1.27 ±0.1
0...0.3
B
0.05
2.4
0.1
4.7 ±0.5
2.7 ±0.3
7.551)
1±0.3
9.25 ±0.2
(15)
A
8.5 1)
0...0.15
7 x 0.6 ±0.1
6 x 1.27
0.5 ±0.1
0.25
M
A B
8˚ MAX.
1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
0.1 B
GPT09114
Footprint
4.6
16.15
9.4
10.8
0.47
0.8
8.42
Figure 16
PG-TO263-7-1 (Plastic Green Transistor Single Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Data Sheet
24
Dimensions in mm
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Package Outlines
PG-TO220-7-11
10 ±0.2
A
9.9 ±0.2
1.27 ±0.1
C
7 x 0.6 ±0.1
1)
Figure 17
0.5 ±0.1
2.4
0...0.15
6 x 1.27
3.7 ±0.3
10.2 ±0.3
8.6 ±0.3
0.05
1.6 ±0.3
0...0.3
2.8 ±0.2
3.7 -0.15
1)
12.95
15.65 ±0.3
17 ±0.3
8.5
4.4
1)
9.25 ±0.2
7.2
3.9 ±0.4
0.25
M
A C
8.4 ±0.4
Typical
Metal surface min. X = 7.25, Y = 12.3
All metal surfaces tin plated, except area of cut.
PG-TO220-7-11 (Plastic Green Transistor Single Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Data Sheet
25
Dimensions in mm
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Package Outlines
PG-TO220-7-12
10 ±0.2
A
B
9.9 ±0.2
1.27 ±0.1
2.8 ±0.2
3.7 -0.15
0...0.3
0.05
2.4
13 ±0.5
C
11±0.5
1)
12.95
17 ±0.3
15.65 ±0.3
8.5
4.4
1)
0.5 ±0.1
0...0.15
2.4
7 x 0.6 ±0.1
6 x 1.27
1)
Figure 18
9.25 ±0.2
7.3
0.25
M
A B C
Typical
Metal surface min. X = 7.25, Y = 12.3
All metal surfaces tin plated, except area of cut.
PG-TO220-7-12 (Plastic Transistor Single Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Data Sheet
26
Dimensions in mm
Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7960
Revision History
8
Revision History
Revision
Date
Changes
1.1
2007-11-21
New packages added;
1.0
2007-11-06
Initial version Data Sheet
Data Sheet
27
Rev. 1.1, 2007-11-21
Edition 2007-11-21
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
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and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
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Warnings
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question, please contact the nearest Infineon Technologies Office.
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