MBRH20045 thru MBRH200100R
Silicon Power
Schottky Diode
VRRM = 45 V - 100 V
IF(AV) = 200 A
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
D-67 Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
Conditions
MBRH20045(R) MBRH20060(R) MBRH20080(R) MBRH200100(R)
Unit
VRRM
45
60
80
100
V
VRMS
32
42
57
70
V
VDC
Tj
Tstg
45
-55 to 150
-55 to 150
60
-55 to 150
-55 to 150
80
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
IF
TC ≤ 136 °C
200
200
200
200
A
IFSM
TC = 25 °C, tp = 8.3 ms
3000
3000
3000
3000
A
Maximum instantaneous
forward voltage
VF
IFM = 200 A, Tj = 25 °C
0.70
0.75
0.84
0.84
V
Maximum instantaneous
reverse current at rated DC
blocking voltage
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
50
1
10
50
1
10
50
1
10
50
mA
0.35
0.35
0.35
0.35
°C/W
Parameter
Average forward current
(per pkg)
Peak forward surge current
MBRH20045(R) MBRH20060(R) MBRH20080(R) MBRH200100(R)
Unit
Thermal characteristics
Thermal resistance, junction
- case
RthJC
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MBRH20045 thru MBRH200100R
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MBRH20045 thru MBRH200100R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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