CPH6445 Ordering number : ENA1532A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH6445 General-Purpose Switching Device Applications Features • • • 4V drive Low ON-resistance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg Unit 60 V ±20 V 3.5 A PW≤10μs, duty cycle≤1% 14 A When mounted on ceramic substrate (1200mm2×0.8mm) 1.6 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7018A-003 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel 4 Packing Type: TL Marking 0.9 1 2 0.95 LOT No. ZX 0.05 1.6 0.2 0.6 2.8 0.2 0.6 5 CPH6445-TL-E 0.15 2.9 6 TL 3 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Electrical Connection 1, 2, 5, 6 SANYO : CPH6 3 4 http://semicon.sanyo.com/en/network 61312 TKIM/21710PE TKIM TC-00002252 No. A1532-1/7 CPH6445 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max 60 ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.2 1.2 1 μA ±10 μA 2.6 2.0 V S RDS(on)1 VDS=10V, ID=1.5A ID=1.5A, VGS=10V 92 117 mΩ RDS(on)2 ID=0.7A, VGS=4.5V 120 168 mΩ RDS(on)3 ID=0.7A, VGS=4V 132 185 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time 310 pF 40 pF Crss 25 pF 6.0 ns Rise Time td(on) tr Turn-OFF Delay Time td(off) Fall Time tf Qg Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=30V, VGS=10V, ID=3.5A IS=3.5A, VGS=0V 5.5 ns 27 ns 13 ns 6.8 nC 1.1 nC 1.4 nC 0.85 1.2 V Switching Time Test Circuit 10V 0V VDD=30V VIN ID=1.5A RL=20Ω VOUT VIN D PW=10μs D.C.≤1% G P.G 50Ω CPH6445 S Ordering Information Device CPH6445-TL-E Package Shipping memo CPH6 3,000pcs./reel Pb Free No. A1532-2/7 CPH6445 ID -- VDS 4.0 0.5 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 4.0 IT14867 RDS(on) -- Ta ID=0.7A 270 1.5A 240 210 180 150 120 90 60 0 2 4 6 8 10 12 14 Source Current, IS -- A = Ta °C 25 °C 0.1 7 5 75 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 7 5 7 10 IT14870 Ciss, Coss, Crss -- pF 10 5 tr 20 40 60 80 100 120 140 160 IT14869 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 IT14871 Ciss, Coss, Crss -- VDS f=1MHz Ciss 3 2 100 7 5 Coss 3 Crss 2 3 2 0.1 0 5 tf td(on) --20 7 2 7 --40 1000 td(off) 3 30 Diode Forward Voltage, VSD -- V VDD=30V VGS=10V 5 60 0.01 7 5 3 2 0.001 3 2 0.01 7 0.001 2 3 90 10 7 5 3 2 C 5° --2 120 Ambient Temperature, Ta -- °C VDS=10V 3 2 150 0 --60 16 3 2 1.0 7 5 7A =0. , ID V 4 = A 0.7 V GS I D= , V 5 A =4. =1.5 V GS V, I D 0 1 = VGS 180 IT14868 | yfs | -- ID 7 5 210 C 25°C 300 240 --25°C 330 Ta=7 5° Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.5 Ta=25°C Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S 0 260 360 30 0 1.0 IT14866 RDS(on) -- VGS 390 Switching Time, SW Time -- ns 1.5 1.0 0.2 0 2.0 25° C 0.4 2.5 °C VGS= 2.5V 0.6 3.0 --25 0.8 3.5 Ta =7 5° C 1.0 VDS=10V 4.5 Drain Current, ID -- A 1.2 V 3.0 4 .0 V Drain Current, ID -- A 1.4 ID -- VGS 5.0 4.5V 15.0V 10.0V 8.0V 1.6 3.5 V 1.8 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 IT14872 10 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14873 No. A1532-3/7 CPH6445 VGS -- Qg 10 VDS=30V ID=3.5A 9 10 7 5 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 3 2 7 6 5 4 3 1 3 2 1 2 4 3 5 Total Gate Charge, Qg -- nC 7 IT14874 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 6 DC 10 op era 0m s tio Operation in this area is limited by RDS(on). 3 2 10 μs 0μ 1m s s 10 ms 10 ID=3.5A 1.0 7 5 2 0 IDP=14A (PW≤10μs) 3 2 0.1 7 5 0 ASO n( Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT14875 When mounted on ceramic substrate (1200mm2×0.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14876 No. A1532-4/7 CPH6445 Embossed Taping Specification CPH6445-TL-E No. A1532-5/7 CPH6445 Outline Drawing CPH6445-TL-E Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1532-6/7 CPH6445 Note on usage : Since the CPH6445 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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