TGS BC328 To-92 plastic-encapsulate transistors (pnp) Datasheet

TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
BC327/ BC328
TRANSISTOR (PNP)
TO-92
FEATURES
Power dissipation
1. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
2.BASE
Symbol
3. EMITTER
Parameter
Value
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
BC327
BC328
BC327
BC328
Unit
VEBO
Emitter-Base Voltage
-50
-30
-45
-25
-5
IC
Collector Current -Continuous
-800
mA
PC
Collector Power Dissipation
625
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
V
V
V
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
BC327
BC328
Collector-emitter breakdown voltage
BC327
BC328
Test
conditions
Min
Typ
Max
Unit
IC= -100uA, IE=0
VCBO
IC= -10mA ,
V
-45
-25
V
-5
V
IB=0
VCEO
Emitter-base breakdown voltage
-50
-30
VEBO
IE= -10uA, IC=0
BC327
BC328
ICBO
VCB= -45 V , IE=0
VCB= -25V , IE=0
-0.1
-0.1
uA
BC327
BC328
ICEO
VCE= -40 V , IB=0
VCE= -20 V , IB=0
-0.2
-0.2
uA
IEBO
VEB= -4 V ,
-0.1
uA
hFE(1)
VCE=-1 V,
IC= -100mA
100
hFE(2)
VCE=-1 V,
IC= -300mA
40
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=0
630
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB= -50mA
-0.7
V
Base-emitter saturation voltage
VBE(sat)
IC= -500mA, IB=-50mA
-1.2
V
VCE=-1 V, IC= -300mA
-1.2
V
Base-emitter voltage
VBE
fT
Transition frequency
Collector Output Capacitance
Cob
VCE= -5V, IC= -10mA
f = 100MHz
VCB=-10V,IE=0
f=1MHZ
260
MHz
12
pF
CLASSIFICATION OF hFE
Rank
Range
16
25
40
100-250
160-400
250-630
A,May,2011
Similar pages