LME49713 www.ti.com SNAS386E – SEPTEMBER 2007 – REVISED JUNE 2010 LME49713 High Performance, High Fidelity Current Feedback Audio Operational Amplifier Check for Samples: LME49713 FEATURES APPLICATIONS • • • • • • • • • • • 1 2 Easily drives 150Ω loads Optimized for superior audio signal fidelity Output short circuit protection 100dB (typ) PSRR and 88dB (typ) CMRR SOIC High Performance and Metal can packages • • • Ultra high quality audio amplification High fidelity preamplifiers High fidelity multimedia State of the art phono pre amps High performance professional audio High fidelity equalization and crossover networks High performance line drivers High performance line receivers High fidelity active filters DESCRIPTION The LME49713 is an ultra-low distortion, low noise, ultra high slew rate current feedback operational amplifier optimized and fully specified for high performance, high fidelity applications. Combining advanced leading-edge process technology with state-of-the-art circuit design, the LME49713 current feedback operational amplifier delivers superior signal amplification for outstanding performance. Operating on a wide supply range of ±5V to ±18V, the LME49713 combines extremely low voltage noise density (1.9nV/√Hz) with very low THD+N (0.00036%) to easily satisfy the most demanding applications. To ensure that the most challenging loads are driven without compromise, the LME49713 has a high slew rate of ±1900V/μs and an output current capability of ±100mA. Further, dynamic range is maximized by an output stage that drives 150Ω loads to within 2.9V of either power supply voltage. The LME49713 's outstanding CMRR (88dB), PSRR (100dB), and VOS (0.05mV) give the amplifier excellent operational amplifier DC performance. The LME49713 is available in an 8–lead narrow body SOIC and 8–lead metal can (TO-99). Demonstration boards are available. Table 1. Key Specifications VALUE UNIT ■ Power Supply Voltage Range ±5V to ±18 V ■ THD+N, f = 1kHz AV = 1, RL = 100Ω, VOUT = 3VRMS 0.0006% (typ) ■ THD+N, f = 1kHz AV = 1, RL = 600Ω, VOUT = 1.4VRMS 0.00036% (typ) ■ Input Noise Density 1.9nV/√Hz (typ) ■ Slew Rate ±1900V/μs (typ) ■ Bandwidth AV = –1, RL= 2kΩ, RF = 1.2kΩ 132 ■ Input Bias Current 1.8μA (typ) ■ Input Offset Voltage 0.05mV (typ) MHz (typ) 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007–2010, Texas Instruments Incorporated LME49713 SNAS386E – SEPTEMBER 2007 – REVISED JUNE 2010 www.ti.com Connection Diagram SOIC Package Figure 1. Order Number LME49713MA See NS Package Number M08A LME49713MA Top Mark NZXTT L49713 MA Figure 2. N = National Logo Z = Assembly plant code X = 1 Digit date code TT = Die traceability L49713 = LME49713 MA = Package code Metal Can NC 8 + NC 1 INVERTING INPUT NON-INVERTING INPUT 7 2 V 6 3 5 OUTPUT NC 4 V - Figure 3. Order Number LME49713HA See NS Package Number H08C These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated Product Folder Links: LME49713 LME49713 www.ti.com SNAS386E – SEPTEMBER 2007 – REVISED JUNE 2010 Absolute Maximum Ratings Power Supply Voltage (1) (2) (VS = V+ - V-) 38V −65°C to 150°C Storage Temperature Input Voltage (V-) - 0.7V to (V+) + 0.7V Output Short Circuit (Note 3) Continuous Power Dissipation Internally Limited ESD Rating (Note 4) 2000V ESD Rating (Note 5) 200V Junction Temperature 150°C Thermal Resistance θJA (MA) 145°C/W Temperature Range TMIN ≤ TA ≤ TMAX –40°C ≤ TJ ≤ 70°C Supply Voltage Range ±5.0V ≤ VS ≤ ± 18V (1) (2) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified. The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed. Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated Product Folder Links: LME49713 3 LME49713 SNAS386E – SEPTEMBER 2007 – REVISED JUNE 2010 www.ti.com Electrical Characteristics (1) (2) The following specifications apply for the VS = ±15V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, and TJ = 25°C, unless otherwise specified. LME49713 Symbol Parameter Conditions Typical (3) Limit (4) Units (Limits) THD+N Total Harmonic Distortion + Noise AV = 1, VOUT = 3VRMS, RF = 1.2kΩ RL = 100Ω, VOUT = 3VRMS RL = 600Ω, VOUT = 1.4VRMS 0.0006 0.00036 IMD Intermodulation Distortion AV = 1, VIN = 3VRMS Two-tone, 60Hz & 7kHz 4:1 0.00009 % BW Bandwidth AV = –1, RF = 1.2kΩ 132 MHz SR Slew Rate VO = 20VP-P, AV = –1 ±1900 V/μs FPBW Full Power Bandwidth VOUT = 20VP-P, AV = –1 30 MHz Settling time AV = –1, 10V step, 0.1% error range 50 ns Equivalent Input Noise Voltage fBW = 20Hz to 20kHz 0.26 0.6 Equivalent Input Noise Density f = 1kHz f = 10Hz 1.9 11.5 4.0 in Current Noise Density f = 1kHz f = 10Hz 16 160 VOS Input Offset Voltage ΔVOS/ΔTemp Average Input Offset Voltage Drift vs Temperature –40°C ≤ TA ≤ 85°C 0.29 PSRR Average Input Offset Voltage Shift vs Power Supply Voltage VSUPPLY = ±5V to ±15V (Note 8) 100 95 dB (min) IB Input Bias Current VCM = 0V 1.8 6 μA (max) ΔIOS/ΔTemp Input Bias Current Drift vs Temperature –40°C ≤ TA ≤ 85°C Inverting input Non-inverting input 4.5 4.7 IOS Input Offset Current VCM = 0V 1.3 5 μA (max) ±13.5 (V+) – 2.0 (V-) + 2.0 V (min) V (min) 86 dB (min) ts en ±0.05 0.00071 0.00045 % (max) % (max) μVRMS (max) nV/√Hz (max) pA/√Hz ±1.0 mV (max) μV/°C nA/°C nA/°C VIN-CM Common-Mode Input Voltage Range CMRR Common-Mode Rejection –10V<Vcm<10V 88 Non-inverting-input Input Impedance –10V<Vcm<10V 1.2 MΩ Inverting-input Input Impedance –10V<Vcm<10V 58 Ω ZT Transimpedance VOUT = ±10V RL = 200Ω RL = ∞ 4.2 4.7 2.0 2.65 MΩ (min) MΩ (min) VOUTMAX Maximum Output Voltage Swing RL = 150Ω ±11.1 ±10.3 V (min) RL = 600Ω ±11.6 ±11.4 V (min) IOUT Output Current RL = 150Ω, VS = ±18V ±100 ±91 mA (min) IOUT-CC Instantaneous Short Circuit Current ROUT Output Resistance ZIN (1) (2) (3) (4) 4 fIN = 5MHz, Open-Loop ±140 mA 10 Ω “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified. The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed. Typical values represent most likely parametric norms at TA = +25ºC, and at the Recommended Operation Conditions at the time of product characterization and are not guaranteed. Datasheet min/max specification limits are guaranteed by test or statistical analysis. Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated Product Folder Links: LME49713 LME49713 www.ti.com SNAS386E – SEPTEMBER 2007 – REVISED JUNE 2010 Electrical Characteristics (continued) (1) (2) The following specifications apply for the VS = ±15V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, and TJ = 25°C, unless otherwise specified. LME49713 Symbol IS Parameter Total Quiescent Current Conditions IOUT = 0mA Typical Limit (3) (4) 8.5 10 Units (Limits) mA (max) Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated Product Folder Links: LME49713 5 LME49713 SNAS386E – SEPTEMBER 2007 – REVISED JUNE 2010 www.ti.com Typical Performance Characteristics THD FFT vs Frequency VO = 3VRMS, RL = 100Ω, VS = ±15V, AV = 1 -100 -100 -105 -105 -110 -110 -115 -115 FFT AMPLITUDE (dB) FFT AMPLITUDE (dB) THD FFT vs Frequency VO = 3VRMS, RL = 1kΩ, VS = ±15V, AV = 1 -120 -125 -130 -135 -140 -145 -130 -135 -140 -145 -150 -150 -155 -155 -160 0 2 4 6 8 -160 0 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20 FREQUENCY (kHz) THD FFT vs Frequency VO = 3VRMS, RL = 600Ω, VS = ±15V, AV = 1 THD FFT vs Frequency VO1 = 1.4VRMS, RL = 1kΩ, VS = ±15V, AV = 1 -100 -100 -105 -105 -110 -110 -115 FFT AMPLITUDE (dB) FFT AMPLITUDE (dB) FREQUENCY (kHz) -120 -125 -130 -135 -140 -145 -115 -120 -125 -130 -135 -140 -145 -150 -150 -155 -155 -160 0 2 4 6 8 -160 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (kHz) THD FFT vs Frequency VO1 = 1.4VRMS, RL = 100Ω, VS = ±15V, AV = 1 THD FFT vs Frequency AV =1. 4VRMS, RL = 600Ω, VS = ±15V, AV = 1 -100 -100 -105 -105 -110 -110 -115 -115 FFT AMPLITUDE (dB) FFT AMPLITUDE (dB) FREQUENCY (kHz) -120 -125 -130 -135 -140 -145 -150 -160 -120 -125 -130 -135 -140 -145 -150 -155 -155 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (kHz) 6 -120 -125 -160 0 2 4 6 8 10 12 14 16 18 20 FREQUENCY (kHz) Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated Product Folder Links: LME49713 LME49713 www.ti.com SNAS386E – SEPTEMBER 2007 – REVISED JUNE 2010 THD vs Frequency VO = 3VRMS, RL = 100Ω, SOIC THD vs Frequency VO = 3VRMS, RL = 600Ω, SOIC 0.01 THD+N (%) THD+N (%) 0.01 0.001 0.0001 20 200 2k FREQUENCY (Hz) 0.001 0.0001 20 20k THD vs Frequency VO = 3VRMS, RL = 100Ω 200 2k FREQUENCY (Hz) 20k THD vs Output Voltage VO = 3VRMS, RL = 600Ω 10 1 1 THD+N (%) THD (%) 0.1 0.01 0.1 0.01 0.001 0.001 0.0001 20 200 2k 0.0001 1m 20k 10m 100m 1 10 15 OUTPUT VOLTAGE (V) FREQUENCY (Hz) Output Voltage vs Supply Voltage AV = 1, RL = 600Ω THD vs RF 20 0.016 OUTPUT VOLTAGE (V) 0.014 THD+N (%) 0.012 0.010 0.008 0.006 y = 2E-07x + 0.0001 0.004 15 10 5 0.002 0 0 20k 40k 60k 80k RF (:) 0 0 5 10 15 20 POWER SUPPLY (V) Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated Product Folder Links: LME49713 7 LME49713 SNAS386E – SEPTEMBER 2007 – REVISED JUNE 2010 www.ti.com Output Voltage vs Supply Voltage AV = 1, RL = open Supply Current (ICC) vs Power Supply RL = open 20 12 SUPPLY CURRENT (mA) OUTPUT VOLTAGE (V) 10 15 10 5 8 6 4 2 0 0 5 10 15 0 20 POWER SUPPLY (V) Supply Current (IEE) vs Power Supply RL = open Gain vs Frequency VS = ±15V, G = –1 0 3 2 -2 SUPPLY CURRENT (mA) 5 6 7 8 9 10 11 12 13 14 15 16 17 18 POWER SUPPLY (V) 1 GAIN (dB) -4 -6 -8 0 -1 -2 32 MHz RF=3 k: 55 MHz RF=2 k: -3 -10 -4 -12 5 6 7 8 9 10 11 12 13 14 15 16 17 18 132 MHz RF=1.2 k: 214 MHz RF=0.8 k: -5 1E+5 POWER SUPPLY (V) 9 16 8 15 1E+9 14 GAIN (dB) 6 GAIN (dB) 1E+8 Gain vs Frequency VS = ±15V, G = –5 7 5 4 3 31 MHz RF=3 k: 2 52 MHz RF=2 k: 111 MHz RF=1.2 k: 1E+6 1E+7 13 12 11 29 MHz RF=3 k: 46 MHz RF=2 k: 10 9 209 MHz RF=0.8 k: 0 1E+5 1E+8 1E+9 FREQUENCY (Hz) 8 1E+7 FREQUENCY (Hz) Gain vs Frequency VS = ±15V, G = –2 1 1E+6 84 MHz RF=1.2 k: 126 MHz RF=0.8 k: 8 1E+5 1E+6 1E+7 1E+8 1E+9 FREQUENCY (Hz) Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated Product Folder Links: LME49713 LME49713 www.ti.com SNAS386E – SEPTEMBER 2007 – REVISED JUNE 2010 Gain vs Frequency VS = ±15V, G = –10 Gain vs Frequency RF = 800Ω, VS = ±15V 22 21 19 21 15 13 19 GAIN (dB) GAIN (dB) 20 18 17 16 15 82 MHz (Av) = -10 17 9 7 27 MHz RF=3 k: 5 41 MHz RF=2 k: 3 65 MHz RF=1.2 k: 1 82 MHz RF=0.8 k: -1 14 1E+5 1E+6 1E+7 1E+8 126 MHz (Av) = -5 11 209 MHz (Av) = -2 214 MHz (Av) = -1 -3 1E+5 1E+9 1E+6 FREQUENCY (Hz) Gain vs Frequency RF = 1.2kΩ, VS = ±15V 21 19 21 19 65 MHz (Av) = -10 1E+9 41 MHz (Av) = -10 17 15 15 13 13 84 MHz (Av) = -5 GAIN (dB) GAIN (dB) 1E+8 Gain vs Frequency RF = 2kΩ, VS = ±15V 17 11 9 7 5 46 MHz (Av) = -5 11 9 7 5 111 MHz (Av) = -2 52 MHz (Av) = -2 3 3 1 1 -1 -1 132 MHz (Av) = -1 -3 1E+5 1E+6 1E+7 1E+8 55 MHz (Av) = -1 -3 1E+5 1E+6 1E+7 1E+9 1E+8 1E+9 FREQUENCY (Hz) FREQUENCY (Hz) Gain vs Frequency RF = 3kΩ, VS = ±15V 21 19 1E+7 FREQUENCY (Hz) CMRR vs Frequency VS= ±15V +0 27 MHz (Av) = -10 -10 17 -20 15 -30 29 MHz (Av) = -5 CMRR (dB) GAIN (dB) 13 11 9 7 5 31 MHz (Av) = -2 -40 -50 -60 -70 3 -80 1 -1 32 MHz (Av) = -1 -3 1E+5 1E+6 1E+7 -90 1E+8 1E+9 FREQUENCY (Hz) -100 20 200 2k FREQUENCY (Hz) 20k Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated Product Folder Links: LME49713 9 LME49713 SNAS386E – SEPTEMBER 2007 – REVISED JUNE 2010 www.ti.com PSRR vs Frequency VS= ±15V, VRIPPLE = 200mVP-P Current Noise vs Frequency VS= ±15V -60 1000 CURRENT NOISE (pA/rt.Hz) -65 PSRR (dB) -70 -75 -80 -85 100 10 -90 -95 1 10 100 1k 10k FREQUENCY (Hz) 100k 1 1M 1 10 Equivalent Voltage Noise vs Frequency VS= ±15V 100k Slew Rate vs Output Voltage VS= ±15V 2500 100 2000 SLEW RATE (V/Ps) VOLTAGE NOISE (nV/rt.Hz) 100 1k 10k FREQUENCY (Hz) 10 1500 1000 500 1 1 10 100 1k 10k FREQUENCY (Hz) 100k 0 0 5 10 15 20 25 VOUT (VP-P) Application Information GENERAL AMPLIFIER FUNCTION Voltage feedback amplifiers have a small-signal bandwidth that is a function of the closed-loop gain. Conversely, the LME49713 current feedback amplifier features a small-signal bandwidth that is relatively independent of the closed-loop gain. This is shown in Figure 1 where the LME49713’s gain is –1,–2, –5 and –10. Like all current feedback amplifiers, the LME49713’s closed-loop bandwidth is a function of the feedback resistance value. Therefore, Rs must be varied to select the desired closed-loop gain. POWER SUPPLY BYPASSING AND LAYOUT CONSIDERATIONS Properly placed and correctly valued supply bypassing is essential for optimized high-speed amplifier operation. The supply bypassing must maintain a wideband, low-impedance capacitive connection between the amplifier’s supply pin and ground. This helps preserve high speed signal and fast transient fidelity. The bypassing is easily accomplished using a parallel combination of a 10μF tantalum and a 0.1μF ceramic capacitors for each power supply pin. The bypass capacitors should be placed as close to the amplifier power supply pins as possible. FEEDBACK RESISTOR SELECTION (Rf) The value of the Rf, is also a dominant factor in compensating the LME49713. For general applications, the LME49713 will maintain specified performance with an 1.2kΩ feedback resistor. Although this value will provide good results for most applications, it may be advantageous to adjust this value slightly for best pulse response optimized for the desired bandwidth. In addition to reducing bandwidth, increasing the feedback resistor value also reduces overshoot in the time domain response. 10 Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated Product Folder Links: LME49713 LME49713 www.ti.com SNAS386E – SEPTEMBER 2007 – REVISED JUNE 2010 21 19 65 MHz (Av) = -10 17 15 GAIN (dB) 13 84 MHz (Av) = -5 11 9 7 5 111 MHz (Av) = -2 3 1 -1 132 MHz (Av) = -1 -3 1E+5 1E+6 1E+7 1E+8 1E+9 FREQUENCY (Hz) Figure 4. FIGURE 1. Bandwidth as a function of gain SLEW RATE CONSIDERATIONS A current feedback amplifier’s slew rate characteristics are different than that of voltage feedback amplifiers. A voltage feedback amplifier’s slew rate limiting or non-linear amplifier behavior is dominated by the finite availability of the first stage tail current charging the second stage voltage amplifier’s compensation capacitor. Conversely, a current feedback amplifier’s slew rate is not constant. Transient current at the inverting input determines slew rate for both inverting and non-inverting gains. The non-inverting configuration slew rate is also determined by input stage limitations. Accordingly, variations of slew rates occur for different circuit topologies. DRIVING CAPACITIVE LOADS The LME49713 can drive significantly higher capacitive loads than many current feedback amplifiers. Although the LME49713 can directly drive as much as 100pF without oscillating, the resulting response will be a function of the feedback resistor value. CAPACITIVE FEEDBACK It is quite common to place a small lead-compensation capacitor in parallel with a voltage feedback amplifier’s feedback resistance, Rf. This compensation reduces the amplifier’s peaking in the frequency domain and damps the transient response. Whereas this yields the expected results when used with voltage feedback amplifiers, this technique must not be used with current feedback amplifiers. The dynamic impedance of capacitors in the feedback loop reduces the amplifier’s stability. Instead, reduced peaking in the frequency response and bandwidth limiting can be accomplished by adding an RC circuit to the amplifier’s input. Revision History Rev Date Description 1.0 09/26/07 Initial release. 1.1 09/28/07 Added the Typical Performance curves. 1.2 10/03/07 Input Limit values. 1.3 10/29/07 Edited the Specification table, typical performance curve, and text edits. 1.4 01/29/08 Added more curves in the Typical Performance section. 1.5 07/24/08 Added the Metal Can package. 1.6 08/20/08 Text edits (updated some of the curves' titles). 1.7 08/22/08 Text edits. 1.8 02/08/10 Input changes on typical and limits in the EC table. 1.9 04/23/10 Input Typical and Limit edits on THD+N and IOUT in the EC table. 2.0 06/02/10 Input text edits on the first page. Submit Documentation Feedback Copyright © 2007–2010, Texas Instruments Incorporated Product Folder Links: LME49713 11 PACKAGE OPTION ADDENDUM www.ti.com 16-Nov-2012 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Qty Drawing Eco Plan Lead/Ball Finish (2) MSL Peak Temp Samples (3) (Requires Login) LME49713HA/NOPB ACTIVE TO-99 LMC 8 20 Green (RoHS & no Sb/Br) POST-PLATE Level-1-NA-UNLIM LME49713MA/NOPB ACTIVE SOIC D 8 95 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM LME49713MAX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 16-Nov-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device LME49713MAX/NOPB Package Package Pins Type Drawing SOIC D 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.4 Pack Materials-Page 1 6.5 B0 (mm) K0 (mm) P1 (mm) 5.4 2.0 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 16-Nov-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LME49713MAX/NOPB SOIC D 8 2500 349.0 337.0 45.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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