MOSFET SMD Type P-Channel MOSFET AO4407A (KO4407A) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-12 A (VGS =-20V) 1.50 0.15 ● RDS(ON) ＜ 11mΩ (VGS =-20V) 0.21 -0.02 +0.04 ● RDS(ON) ＜ 13mΩ (VGS =-10V) ● RDS(ON) ＜ 17mΩ (VGS =-6V) 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current TA=25°C TA=70°C ID -10 IDM -60 Avalanche Current IAR -26 EAR 101 Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead L=0.3mH TA=25°C TA=70°C t ≤ 10s Steady-State PD RthJA RthJL V -12 Pulsed Drain Current Avalanche energy Unit 3.1 2 A mJ W 40 75 ℃/W 24 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO4407A (KO4407A) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS VDS=0V, VGS=±25V VGS(th) VDS=VGS ID=-250μA Gate Threshold Voltage Min Typ -30 ID=-250μA, VGS=0V On state drain current RDS(On) VDS=-30V, VGS=0V -1 VDS=-30V, VGS=0V, TJ=55℃ -5 ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg VGS=-20V, ID=-12A -1.7 17 VGS=-10V, VDS=-5V VDS=-5V, ID=-10A -60 2060 VGS=0V, VDS=-15V, f=1MHz 2.4 3.6 30 39 VGS=-10V, VDS=-15V, ID=-12A 4.6 11 tr 9.4 Turn-Off DelayTime td(off) Marking 2 4407A KC**** www.kexin.com.cn Ω nC 10 VGS=-10V, VDS=-15V, RL=1.25Ω, RGEN=3Ω ns 24 12 IF=-12A, dI/dt=100A/us 30 40 22 IS IS=-1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. ■ Marking pF VGS=0V, VDS=0V, f=1MHz td(on) VSD 2600 295 Turn-On Rise Time Diode Forward Voltage S 370 Turn-On DelayTime Maximum Body-Diode Continuous Current mΩ A 21 Qgd Qrr V VGS=-6V, ID=-10A Gate Drain Charge Body Diode Reverse Recovery Charge -3 13 Qg tf nA 15 TJ=125℃ Qgs trr ±100 VGS=-10V, ID=-12A Total Gate Charge Body Diode Reverse Recovery Time uA 11 Gate Source Charge Turn-Off Fall Time Unit V VGS=-20V, ID=-12A Static Drain-Source On-Resistance Max nC -3 A -1 V MOSFET SMD Type P-Channel MOSFET AO4407A (KO4407A) ■ Typical Characterisitics 80 80 -10V 60 60 -5V -ID(A) -ID (A) VDS= -5V -6V -4.5V 40 40 -4V 125°C 20 20 25°C VGS= -3.5V 0 0 0 1 2 3 4 5 0 0.5 20 Normalized On-Resistance RDS(ON) (mΩ ) 1.5 2 2.5 3 3.5 4 4.5 5 1.8 15 VGS=-6V 10 VGS=-10V VGS=-20V 5 0 0 4 8 12 16 VGS=-20V ID=-12A 1.6 1.4 VGS=-10V ID=-12A 1.2 VGS=-6V ID=-10A 1.0 0.8 20 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 ID=-12A 1E+00 25 1E-01 20 -IS (A) RDS(ON) (mΩ ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 125°C 15 125°C 1E-02 1E-03 25°C 1E-04 10 1E-05 25°C 1E-06 5 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO4407A (KO4407A) ■ Typical Characterisitics 3000 10 Capacitance (pF) -VGS (Volts) 2500 VDS=-15V ID=-12A 8 6 4 2 Ciss 2000 1500 1000 Coss 500 0 0 5 10 15 20 25 Crss 0 30 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 10 TJ(Max)=150°C TA=25°C 1 10ms RDS(ON) limited 0.1 100ms TJ(Max)=150°C TA=25°C Power (W) 100µs 1ms -ID (Amps) 30 1000 10µs 0.1 1 10 -VDS (Volts) 1 10 1 0.00001 100 . D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.01 Zθ JA Normalized Transient Thermal Resistance 25 -VDS (Volts) Figure 8: Capacitance Characteristics 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 4 20 www.kexin.com.cn 100 1000