Digitron GA301A Silicon controlled rectifier nanosecond switching planar Datasheet

DIGITRON SEMICONDUCTORS
GA300, GA300A, GA301, GA301A
SILICON CONTROLLED RECTIFIER
NANOSECOND SWITCHING PLANAR
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RANKINGS
GA300
GA300A
GA301
GA301A
Repetitive Peak Off State Voltage
VDRM
Repetitive Peak On-State Current
ITRM
Up to 100A
Peak Gate Current
60V
100V
IGM
250 mA
IG(AV)
25 mA
Reverse Gate Current
IGR
3 mA
Reverse Gate Voltage
VGR
5V
Average Gate Current
Storage Temperature Range
-65 to +150°C
Operating Temperature Range
0 to +125°C
ELECTRICAL CHARACTERISTICS (@ 25°C unless otherwise noted)
Test
Symbol
Min
Typical
Max
Units
Conditions
Delay Time
td
-
20
10
30
-
ns
IG = 20 mA, IT = 1 A
IG = 30 mA, IT = 1A
Rise Time (Note 1)
GA300, GA300A
tr
-
15
25
25
-
ns
VD = 60 V, IT = 1 A
VD = 60 V, IT = 30 A (Note 1)
Rise Time (Note 1)
GA301, GA301A
tr
-
10
20
20
-
ns
VD = 100 V, IT = 1A
VD = 100 V, IT = 30 A (Note 1)
tq
-
0.8
2.0
µs
IT = 1 A, IR = 1 A, RGK = 1K
0.3
0.5
tpg(on)
-
0.02
0.05
µs
IG = 10 mA, IT = 1 A
Off-State Current
IDRM
-
0.01
20
0.1
100
µA
VDRM = Rating, RGK = 1K, T = 25°C
VDRM = Rating, RGK = 1K, T = 125°C
Reverse Current
IRRM
-
1.0
10
mA
Gate Trigger Voltage
VGT
0.4
0.10
0.6
0.2
0.75
-
V
VD = 5V, RGS = 100 Ω, T = 25°C
VD = 5 V, RGS = 100 Ω, T = 125°C
Gate Trigger Current
IGT
-
10
200
µA
VD = 5 V, RGS = 10 K
VT
-
1.1
1.5
V
IT = 2 A
dV/dt
15
30
-
V/µs
VD = 30 V, RGK = 1 K
IGR
-
0.01
0.1
mA
VGR = 5 V
IH
0.3
0.05
2.0
0.4
5.0
-
mA
VD = 5V, RGK = 1 K, T = 25°C
VD = 5 V, RGK = 1 K, T = 125°C
Circuit Commutated Turn Off Time
GA300, GA301
GA300A, GA301A
Gate Trigger On Pulse Width
(Note 2)
On-State Voltage
Off-State Voltage – Critical Rate of Rise
Reverse Gate Current
Holding Current
VRRM = 30 V, RGK = 1 K
(Note 2)
Note 1 – IG = 10 mA, Pulse Test: Duty Cycle < 1%.
Note 2 – Pulse test intended to guarantee reverse anode voltage capability for pulse commutation. Device should not be operated in the reverse blocking mode on a continuous
basis.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[email protected]
www.digitroncorp.com
Rev. 20130116
DIGITRON SEMICONDUCTORS
GA300, GA300A, GA301, GA301A
SILICON CONTROLLED RECTIFIER
NANOSECOND SWITCHING PLANAR
MECHANICAL CHARACTERISTICS
GA300(A), GA301(A)
Case
TO-18
Marking
Alpha-numeric
Pin out
See below
TO-18
A
B
C
D
E
F
G
H
J
K
L
M
N
P
144 Market Street
Kenilworth NJ 07033 USA
Inches
Min
Max
0.209
0.230
0.178
0.195
0.170
0.210
0.016
0.021
0.030
0.016
0.019
0.100 BSC
0.036
0.046
0.028
0.048
0.500
0.250
45°C BSC
0.050 BSC
0.050
phone +1.908.245-7200
fax +1.908.245-0555
Millimeters
Min
Max
5.310
5.840
4.520
4.950
4.320
5.330
0.406
0.533
0.762
0.406
0.483
2.540 BSC
0.914
1.170
0.711
1.220
12.700
6.350
45° BSC
1.270 BSC
1.270
[email protected]
www.digitroncorp.com
Rev. 20130116
DIGITRON SEMICONDUCTORS
GA300, GA300A, GA301, GA301A
GB300, GB300A, GB301, GB301A
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
SILICON CONTROLLED RECTIFIER
NANOSECOND SWITCHING PLANAR
[email protected]
www.digitroncorp.com
Rev. 20130116
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