MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE A B E J H K M(4 - Mounting Holes) L F G C D G E E C CM Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. 2 - M6 NUTS 2 - M4 NUTS TC Measured Point N P E Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking C E G Outline Drawing and Circuit Diagram Dimensions Inches A 4.21 B 3.66±0.01 C 2.44 D 1.89±0.01 E 0.53 Millimeters 107.0 93.0±0.25 62.0 48.0±0.25 Dimensions Inches Millimeters H 0.96 J 0.31 8.0 K 1.14 29.0 L 0.81 13.5 M 0.26 Dia. 24.5 20.5 6.5 Dia. F 0.37 9.5 N 1.34 +0.04/-0.02 34 +1.0/-0.5 G 0.45 11.5 P 1.02 +0.04/-0.02 26 +1.0/-0.5 Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400HU-24H is a 1200V (VCES), 400 Ampere Single IGBT Module. Type Current Rating Amperes VCES Volts (x 50) CM 400 24 Sep.1998 MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM400HU-24H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 400 Amperes ICM 800* Amperes IE 400 Amperes Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** IEM 800* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 2100 Watts Mounting Torque, M6 Main Terminal, M6 Mounting – 3.5~4.5 N·m Mounting Torque, M4 Terminal – 1.3~1.7 N·m – 450 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 2 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA 4.5 6 7.5 Volts – 2.9 3.7 Volts – Volts – nC Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(sat) IC = 400A, VGE = 15V, Tj = 25°C IC = 400A, VGE = 15V, Tj = 125°C – Total Gate Charge QG VCC = 600V, IC = 400A, VGE = 15V – 1500 Emitter-Collector Voltage* VEC IE = 400A, VGE = 0V – – 2.85 3.2 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time tr Switch Turn-off Delay Time Times Fall Time Test Conditions Min. Typ. – – 60 nF – – 21 nF – – 12 nF VCC = 600V, IC = 400A, – – 250 ns VGE1 = VGE2 = 15V, – – 350 ns VCE = 10V, VGE = 0V Max. Units td(off) RG = 0.78Ω, Resistive – – 350 ns tf Load Switching Operation – – 350 ns Diode Reverse Recovery Time trr IE = 400A, diE/dt = -800A/µs – – 300 ns Diode Reverse Recovery Charge Qrr IE = 400A, diE/dt = -800A/µs – 2.2 – µC Max. Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c)Q Thermal Resistance, Junction to Case Contact Thermal Resistance Min. Typ. Per IGBT Module Test Conditions – – 0.06 Units °C/W Rth(j-c)D Per FWDi Module – – 0.09 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.02 – °C/W Sep.1998 MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) 800 12 VGE = 20V 600 11 400 10 9 200 8 0 2 4 6 8 600 400 200 4 8 12 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 240 480 720 960 1200 COLLECTOR-CURRENT, IC, (AMPERES) CAPACITANCE VS. VCE (TYPICAL) 2 IC = 160A 101 1.0 0 4 8 12 16 CAPACITANCE, Cies, Coes, Cres, (nF) 4 102 20 1.5 2.0 2.5 3.0 3.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, trr, (ns) td(off) tf td(on) VCC = 600V VGE = ±15V RG = 0.78 Ω Tj = 125°C tr 102 COLLECTOR CURRENT, IC, (AMPERES) 103 Irr 101 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 Cres VGE = 0V 100 101 102 GATE CHARGE, VGE di/dt = -800A/µsec Tj = 25°C trr Coes COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 102 101 10-1 10-1 4.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Cies 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 400A 101 101 1 0 REVERSE RECOVERY CURRENT, Irr, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 8 102 2 Tj = 25°C IC = 800A 103 3 102 Tj = 25°C 0 4 20 103 6 VGE = 15V Tj = 25°C Tj = 125°C 0 0 10 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VCE = 10V Tj = 25°C Tj = 125°C 0 0 SWITCHING TIME, (ns) 5 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 800 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 400A 16 VCC = 400V 12 VCC = 600V 8 4 0 0 400 800 1200 1600 2000 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM400HU-24H TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.06°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.09°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998