ONSEMI MC74VHC1GT00DFT1

MC74VHC1GT00
Single 2−Input NAND Gate/
CMOS Logic Level Shifter
LSTTL−Compatible Inputs
Features
•
•
•
•
•
•
•
•
•
High Speed: tPD = 3.1 ns (Typ) at VCC = 5 V
Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2 V
CMOS−Compatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @Load
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MARKING
DIAGRAMS
5
5
1
SC−88A/SC70−5/SOT−353
DF SUFFIX
CASE 419A
M
The MC74VHC1GT00 is a single gate 2−input NAND fabricated
with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The device input is compatible with TTL−type input thresholds and
the output has a full 5 V CMOS level output swing. The input
protection circuitry on this device allows overvoltage tolerance on the
input, allowing the device to be used as a logic−level translator from
3 V CMOS logic to 5 V CMOS Logic or from 1.8 V CMOS logic to
3 V CMOS Logic while operating at the high voltage power supply.
The MC74VHC1GT00 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1GT00 to be used to interface 5 V circuits to
3 V circuits. The output structures also provide protection
when VCC = 0 V. These input and output structures help prevent
device destruction caused by supply voltage − input/output voltage
mismatch, battery backup, hot insertion, etc.
VH M G
G
1
5
5
VH M G
G
1
TSOP−5/SOT23−5/SC59−5
DT SUFFIX
CASE 483
1
VH = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
Power Down Protection Provided on Inputs and Outputs
Balanced Propagation Delays
PIN ASSIGNMENT
Pin and Function Compatible with Other Standard Logic Families
1
Chip Complexity: FETs = 64
Pb−Free Packages are Available
2
IN A
3
GND
4
OUT Y
5
VCC
IN B
1
IN A
2
GND
3
IN B
5 VCC
FUNCTION TABLE
Inputs
4 OUT Y
Figure 1. Pinout
IN A
IN B
&
February, 2007 − Rev. 11
A
B
Y
L
L
H
H
L
H
L
H
H
H
H
L
OUT Y
ORDERING INFORMATION
Figure 2. Logic Symbol
© Semiconductor Components Industries, LLC, 2007
Output
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
1
Publication Order Number:
MC74VHC1GT00/D
MC74VHC1GT00
MAXIMUM RATINGS
Symbol
Characteristics
VCC
DC Supply Voltage
VIN
DC Input Voltage
VOUT
DC Output Voltage
IIK
Input Diode Current
VCC = 0
High or Low State
IOK
Output Diode Current
IOUT
DC Output Current, per Pin
ICC
DC Supply Current, VCC and GND
TSTG
−20
mA
+20
mA
+25
mA
+50
mA
*65 to )150
_C
350
230
_C/W
SC70−5/SC−88A/SOT−353
SOT23−5/TSOP−5/SC59−5
150
200
mW
PD
Power Dissipation in Still Air at 85_C
Level 1
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
u2000
u200
N/A
V
Above VCC and Below GND at 125_C (Note 5)
$500
mA
ESD Withstand Voltage
Latchup Performance
V
SC70−5/SC−88A/SOT−353 (Note 1)
SOT23−5/TSOP−5/SC59−5
Thermal Resistance
ILATCHUP
V
−0.5 to 7.0
−0.5 to VCC + 0.5
_C
qJA
Flammability Rating
−0.5 to +7.0
_C
Junction Temperature Under Bias
FR
V
260
Lead Temperature, 1 mm from Case for 10 Seconds
TJ
VESD
−0.5 to +7.0
)150
TL
Moisture Sensitivity
Unit
VOUT < GND; VOUT > VCC
Storage Temperature Range
MSL
Value
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
VCC
DC Supply Voltage
VIN
DC Input Voltage
VOUT
DC Output Voltage
TA
VCC = 0
High or Low State
Operating Temperature Range
tr , tf
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
Input Rise and Fall Time
Min
Max
Unit
3.0
5.5
V
0.0
5.5
V
0.0
0.0
5.5
VCC
V
−55
+125
°C
0
0
100
20
ns/V
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
TJ = 80 ° C
117.8
TJ = 90 ° C
1,032,200
TJ =100° C
80
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ =110 ° C
Time, Years
TJ =120° C
Time, Hours
TJ = 130° C
Junction
Temperature °C
NORMALIZED FAILURE RATE
Device Junction Temperature versus
Time to 0.1% Bond Failures
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
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2
MC74VHC1GT00
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
1.4
2.0
2.0
VIH
Minimum High−Level
Input Voltage
3.0
4.5
5.5
VIL
Maximum Low−Level
Input Voltage
3.0
4.5
5.5
VOH
Minimum High−Level
Output Voltage
VIN = VIH or VIL
VOL
Maximum Low−Level
Output Voltage
VIN = VIH or VIL
TA ≤ 85°C
TA = 25°C
VCC
(V)
Typ
Max
Min
1.4
2.0
2.0
0.53
0.8
0.8
VIN = VIH or VIL
IOH = −50 mA
3.0
4.5
2.9
4.4
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
3.0
4.5
2.58
3.94
VIN = VIH or VIL
IOL = 50 mA
3.0
4.5
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
Max
3.0
4.5
−55 ≤ TA ≤ 125°C
Min
Max
1.4
2.0
2.0
0.53
0.8
0.8
V
0.53
0.8
0.8
2.9
4.4
2.9
4.4
2.48
3.80
2.34
3.66
Unit
V
V
V
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
V
IIN
Maximum Input
Leakage Current
VIN = 5.5 V or GND
0 to
5.5
±0.1
±1.0
±1.0
mA
ICC
Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
1.0
20
40
mA
ICCT
Quiescent Supply
Current
Input: VIN = 3.4 V
5.5
1.35
1.50
1.65
mA
IOFF
Power Off Output
Leakage Current
VOUT = 5.5 V
0.0
0.5
5.0
10
mA
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AC ELECTRICAL CHARACTERISTICS Input tr = tf = 3.0 ns
TA ≤ 85°C
TA = 25°C
Symbol
tPLH,
tPHL
CIN
Parameter
Maximum Propagation
Delay, Input A or B to Y
Min
Typ
Max
Max
Unit
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
4.1
5.5
10.0
13.5
11.0
15.0
13.0
17.5
ns
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
3.1
3.6
6.9
7.9
8.0
9.0
9.5
10.5
5.5
10
10
10
Test Conditions
Maximum Input
Capacitance
Min
Max
−55 ≤ TA ≤ 125°C
Min
pF
Typical @ 25°C, VCC = 5.0 V
CPD
11
Power Dissipation Capacitance (Note 6)
pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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3
MC74VHC1GT00
3.0 V
A or B
50%
GND
tPHL
tPLH
VOH
Y
50% VCC
VOL
Figure 4. Switching Waveforms
VCC
OUTPUT
INPUT
CL*
*Includes all probe and jig capacitance.
A 1−MHz square input wave is recommended for propagation delay tests.
Figure 5. Test Circuit
ORDERING INFORMATION
Device
Package
MC74VHC1GT00DFT1
SC70−5/SC−88A/SOT−353
M74VHC1GT00DFT1G
SC70−5/SC−88A/SOT−353
(Pb−Free)
MC74VHC1GT00DFT2
SC70−5/SC−88A/SOT−353
M74VHC1GT00DFT2G
SC70−5/SC−88A/SOT−353
(Pb−Free)
MC74VHC1GT00DTT1
SOT23−5/TSOP−5/SC59−5
M74VHC1GT00DTT1G
SOT23−5/TSOP−5/SC59−5
(Pb−Free)
Shipping†
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MC74VHC1GT00
PACKAGE DIMENSIONS
SC−88A, SOT−353, SC−70
CASE 419A−02
ISSUE J
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
G
5
4
−B−
S
1
2
DIM
A
B
C
D
G
H
J
K
N
S
3
D 5 PL
0.2 (0.008)
M
B
M
N
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
−−−
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
J
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
mm Ǔ
ǒinches
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
MC74VHC1GT00
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE F
NOTE 5
2X
0.10 T
2X
0.20 T
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5. OPTIONAL CONSTRUCTION: AN
ADDITIONAL TRIMMED LEAD IS ALLOWED
IN THIS LOCATION. TRIMMED LEAD NOT TO
EXTEND MORE THAN 0.2 FROM BODY.
D 5X
0.20 C A B
5
1
4
2
3
M
B
S
K
L
DETAIL Z
G
A
DIM
A
B
C
D
G
H
J
K
L
M
S
DETAIL Z
J
C
0.05
SEATING
PLANE
H
T
MILLIMETERS
MIN
MAX
3.00 BSC
1.50 BSC
0.90
1.10
0.25
0.50
0.95 BSC
0.01
0.10
0.10
0.26
0.20
0.60
1.25
1.55
0_
10 _
2.50
3.00
SOLDERING FOOTPRINT*
0.95
0.037
1.9
0.074
2.4
0.094
1.0
0.039
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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6
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MC74VHC1GT00/D