Kexin FMMT489 Medium power transistor Datasheet

Transistors
IC
SMD Type
Medium Power Transistor
FMMT489
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
0.55
Very low equivalent on-resistance
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
50
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Peak collector current
ICM
4
A
Collector current
IC
1
A
Base current
IB
200
mA
Ptot
500
mW
Tj,Tstg
-55 to +150
Power dissipation
Operating and storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=100ìA
50
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=10mA
30
V
Emitter-base breakdown voltage
V(BR)EBO IE=100ìA
5
Collector cutoff current
ICBO
Emitter cut-off current
IEBO
VCB=30V
nA
VEB=4V
100
nA
Collector-emitter saturation voltage *
VCE(sat) IC=1A,IB=100mA
Base-emitter saturation voltage *
VBE(sat) IC=1A,IB=100mA
Base-emitter voltage *
VBE(ON) IC=1A,VCE=2V
Static Forward Current Transfer Ratio*
Current-gain-bandwidth product
Output capacitance
* Pulse test: tp
hFE
fT
Cobo
300 ìs; d
V
100
0.3
1.0
IC=1mA,VCE=2V
100
IC=1A,VCE=2V
100
IC=2A,VCE=2V
60
IC=4A,VCE=2V
20
IC=50mA,VCE=10V,f=100MHz
150
VCB=10V,f=1MHz
V
V
V
300
MHz
10
pF
0.02.
Marking
Marking
489
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