IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL 512K x 8 LOW VOLTAGE, FEBRUARY 2012 ULTRA LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION The ISSI IS62WV5128DALL / IS62WV5128DBLL are • High-speed access time: 35, 45, 55 ns high-speed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby • TTL compatible interface levels When CS1 is HIGH (deselected) the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. • Single power supply 1.65V – 2.2V Vdd (IS62WV5128DALL) Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. 2.3V – 3.6V Vdd (IS62WV5128DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Industrial and Automotive temperature support The IS62WV5128DALL and IS62WV5128DBLL are packaged in the JEDEC standard 32-pin TSOP (TYPE I), 32-pin sTSOP (TYPE I), 32-pin TSOP (Type II), 32-pin SOP and 36-pin mini BGA. • Lead-free available FUNCTIONAL BLOCK DIAGRAM A0-A18 DECODER 512K x 8 MEMORY ARRAY VDD GND I/O DATA CIRCUIT I/O0-I/O7 CS1 OE COLUMN I/O CONTROL CIRCUIT WE Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 1 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL PIN DESCRIPTIONS A0-A18 CS1 OE WE I/O0-I/O7 NC Vdd GND Address Inputs Chip Enable 1 Input Output Enable Input Write Enable Input Input/Output No Connection Power Ground 36-pin mini BGA (B) (6mm x 8mm) (Package Code B) 1 2 3 4 5 6 A A0 A1 NC A3 A6 A8 B I/O4 A2 WE A4 A7 I/O0 C I/O5 NC A5 D GND VDD E VDD GND F I/O6 G I/O7 H A9 I/O1 A18 A17 I/O2 OE CS1 A16 A15 I/O3 A10 A11 A12 A13 A14 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL PIN DESCRIPTIONS A0-A18 Address Inputs CS1 Chip Enable 1 Input OE Output Enable Input WE Write Enable Input I/O0-I/O7 Input/Output Vdd Power GND Ground PIN CONFIGURATION 32-pin TSOP (TYPE I), (Package Code T) 32-pin sTSOP (TYPE I) (Package Code H) A11 A9 A8 A13 WE A18 A15 VDD A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CS1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 32-pin SOP (Package Code Q) 32-pin TSOP (TYPE II) (Package Code T2) A17 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VDD A15 A18 WE A13 A8 A9 A11 OE A10 CS1 I/O7 I/O6 I/O5 I/O4 I/O3 3 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL TRUTH TABLE Mode Not Selected (Power-down) Output Disabled Read Write WE X H H L CS1 H L L L I/O Operation High-Z OE X H L X Vdd Current Isb1, Isb2 High-Z Dout Din Icc Icc Icc ABSOLUTE MAXIMUM RATINGS(1) Symbol Vterm Vdd Tstg Pt Parameter Terminal Voltage with Respect to GND Vdd Relates to GND Storage Temperature Power Dissipation Value –0.5 to Vdd + 0.5 –0.3 to 4.0 –65 to +150 1.0 Unit V V °C W Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol Cin CI/O Parameter Input Capacitance Input/Output Capacitance Conditions Vin = 0V Vout = 0V Max. 6 8 Unit pF pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V. 4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL AC TEST CONDITIONS Parameter Unit Unit (2.3V-3.6V) (3.3V + 5%) Input Pulse Level 0.4V to Vdd - 0.3V 0.4V to Vdd - 0.3V Input Rise and Fall Times 1V/ ns 1V/ ns Input and Output Timing VDD /2 VDD + 0.05 and Reference Level (VRef) 2 Output Load See Figures 1 and 2 See Figures 1 and 2 R1 ( Ω ) 1005 1213 R2 ( Ω ) 820 1378 Vtm (V) 3.0V 3.3V Unit (1.65V-2.2V) 0.4V to Vdd - 0.3V 1V/ ns 0.9V See Figures 1 and 2 13500 10800 1.8V AC TEST LOADS R1 R1 VTM VTM OUTPUT OUTPUT 30 pF Including jig and scope R2 Figure 1. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 5 pF Including jig and scope R2 Figure 2. 5 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Vdd = 3.3V + 5% Symbol Voh Vol Vih Vil Ili Ilo Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage Test Conditions Vdd = Min., Ioh = –1 mA Vdd = Min., Iol = 2.1 mA Min. 2.4 — 2 –0.3 –1 –1 GND ≤ Vin ≤ Vdd GND ≤ Vout ≤ Vdd, Outputs Disabled Max. — 0.4 Vdd + 0.3 0.8 1 1 Unit V V V V µA µA Max. — 0.4 Vdd + 0.3 0.8 1 1 Unit V V V V µA µA Note: 1. Vil (min.) = –0.3V DC; Vil (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested. Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width < 10 ns). Not 100% tested. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Vdd = 2.3V-3.6V Symbol Voh Vol Vih Vil Ili Ilo Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage Test Conditions Vdd = Min., Ioh = –1.0 mA Vdd = Min., Iol = 2.1 mA Min. 1.8 — 2.0 –0.3 –1 –1 GND ≤ Vin ≤ Vdd GND ≤ Vout ≤ Vdd, Outputs Disabled Note: 1. Vil (min.) = –0.3V DC; Vil (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested. Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width < 10 ns). Not 100% tested. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Vdd = 1.65V-2.2V Symbol Voh Vol Vih Vil(1) Ili Ilo Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage Test Conditions Ioh = -0.1 mA Iol = 0.1 mA Vdd 1.65-2.2V 1.65-2.2V 1.65-2.2V 1.65-2.2V GND ≤ Vin ≤ Vdd GND ≤ Vout ≤ Vdd, Outputs Disabled Min. 1.4 — 1.4 –0.2 –1 –1 Max. — 0.2 Vdd + 0.2 0.4 1 1 Unit V V V V µA µA Note: 1. Vil (min.) = –0.3V DC; Vil (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested. Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width < 10 ns). Not 100% tested. 6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL OPERATING RANGE (Vdd) Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C Automotive –40°C to +125°C Vdd 1.65V-2.2V 1.65V-2.2V 1.65V-2.2V Speed 45ns 55ns 55ns Vdd (45 ns) 2.3V-3.6V 2.3V-3.6V Vdd (35 ns) 3.3V+5% 3.3V+5% OPERATING RANGE (Vdd) Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C OPERATING RANGE (Vdd) Range Automotive Ambient Temperature –40°C to +125°C Vdd (45 ns) 2.3V-3.6V POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) -35 Symbol Parameter Test Conditions Min. Max. Icc Vdd Dynamic Operating Vdd = Max., Com. — 20 Supply Current Iout = 0 mA, f = fmax Ind. — 25 CE = Vil Auto. — 30 Vin ≥ Vdd – 0.3V, or typ.(2) 10 Vin ≤ 0.4V Icc1 Operating Vdd = Max., Com. — 3 Supply Current Iout = 0 mA, f = 0 Ind. — 3 CE = Vil Auto. — 3 Vin ≥ Vdd – 0.3V, or Vin ≤ 0.4V Isb2 CMOS Standby Vdd = Max., Com. — 5 Current (CMOS Inputs) CE ≥ Vdd – 0.2V, Ind. — 10 Vin ≥ Vdd – 0.2V, or Auto. — 30 Vin ≤ 0.2V, f = 0 typ.(2) 2 -45 Min. Max. — 15 — 20 — 25 -55 Min. Max. — 15 — 20 — 25 Unit mA — — — 3 3 3 — — — 3 3 3 mA — — — 5 10 30 — — — 5 10 30 µA Note: 1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at Vdd = 3.0V, Ta = 25oC and not 100% tested. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 7 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) 35 ns 45 ns 55 ns Symbol Parameter Min. Max. Min. Max. Min. Max. Unit trc taa toha tacs1 tdoe thzoe(2) tlzoe(2) thzcs1 tlzcs1 Read Cycle Time 35 — 45 — 55 — ns Address Access Time — 35 — 45 — 55 ns Output Hold Time 10 — 10 — 10 — ns CS1 Access Time — 35 — 45 — 55 ns OE Access Time — 10 — 20 — 25 ns OE to High-Z Output — 10 — 15 — 20 ns OE to Low-Z Output 3 — 5 — 5 — ns CS1 to High-Z Output 0 10 0 15 0 20 ns CS1 to Low-Z Output 5 — 10 — 10 — ns Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to Vdd-0.2V/Vdd-0.3V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. AC WAVEFORMS READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE = Vil, WE = Vih) tRC ADDRESS tAA tOHA DOUT PREVIOUS DATA VALID tOHA DATA VALID 8 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL AC WAVEFORMS READ CYCLE NO. 2(1,3) (CS1, OE Controlled) tRC ADDRESS tAA tOHA OE tDOE CS1 tHZOE tLZOE tACS1 tLZCS1 DOUT HIGH-Z tHZCS DATA VALID Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CS1= Vil. WE=Vih. 3. Address is valid prior to or coincident with CS1 LOW transition. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 9 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range) 35ns 45ns 55 ns Symbol Parameter Min. Max. Min.Max. Min. Max. Unit twc Write Cycle Time 35 — 45 — 55 — ns tscs1 CS1 to Write End 25 — 35 — 45 — ns taw Address Setup Time to Write End 25 — 35 — 45 — ns tha Address Hold from Write End 0 — 0 — 0 — ns tsa Address Setup Time 0 — 0 — 0 — ns tpwe WE Pulse Width 25 — 35 — 40 — ns tsd Data Setup to Write End 20 — 20 — 25 — ns thd Data Hold from Write End 0 — 0 — 0 — ns (3) thzwe WE LOW to High-Z Output — 10 — 20 — 20 ns tlzwe(3) WE HIGH to Low-Z Output 3 — 5 — 5 — ns Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4V to Vdd-0.2V/Vdd-0.3V and output loading specified in Figure 1. 2. The internal write time is defined by the overlap of CS1 LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. 3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. AC WAVEFORMS WRITE CYCLE NO. 1 (CS1 Controlled, OE = HIGH or LOW) tWC ADDRESS tHA tSCS1 CS1 tAW tPWE WE tSA DOUT DATA UNDEFINED tHZWE tLZWE HIGH-Z tSD DIN tHD DATA-IN VALID 10 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle) tWC ADDRESS OE tHA tSCS1 CS1 tAW tPWE WE tSA DOUT tHZWE tLZWE HIGH-Z DATA UNDEFINED tSD DIN tHD DATA-IN VALID WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle) tWC ADDRESS OE tHA tSCS1 CS1 tAW tPWE WE tSA DOUT DATA UNDEFINED tHZWE tLZWE HIGH-Z tSD DIN Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 tHD DATA-IN VALID 11 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Vdr Idr tsdr trdr Parameter Vdd for Data Retention Data Retention Current Data Retention Setup Time Recovery Time Test Condition See Data Retention Waveform Vdd = 1.2V, CS1 ≥ Vdd – 0.2V Com. Ind. Auto. typ.(1) See Data Retention Waveform See Data Retention Waveform Min. 1.2 — — — 1 0 trc Max. 3.6 3 7 20 Unit V µA — — ns ns Note: 1. Typical values are measured at Vdd = 3.0V, Ta = 25oC and not 100% tested. DATA RETENTION WAVEFORM (CS1 Controlled) tSDR Data Retention Mode tRDR VDD VDR CS1 GND CS1 ≥ VDD - 0.2V 12 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL ORDERING INFORMATION IS62WV5128DALL (1.65V-2.2V) Industrial Range: –40°C to +85°C Speed (ns) 55 55 55 55 Order Part No. IS62WV5128DALL-55TI IS62WV5128DALL-55TLI IS62WV5128DALL-55T2I IS62WV5128DALL-55T2LI IS62WV5128DALL-55HI IS62WV5128DALL-55HLI IS62WV5128DALL-55BI IS62WV5128DALL-55BLI Package TSOP, TYPE I (8 x 20 mm) TSOP, TYPE I, Lead-free (8 x 20 mm) TSOP, TYPE II TSOP, TYPE II, Lead-free sTSOP, TYPE I (8 x 13.4 mm) sTSOP, TYPE I, Lead-free (8 x 13.4 mm) mini BGA (6mmx8mm) mini BGA (6mmx8mm), Lead-free ORDERING INFORMATION IS62WV5128BLL (2.3V - 3.6V) Industrial Range: –40°C to +85°C Speed (ns) 45 45 45 45 45 45 45 45 45 Order Part No. IS62WV5128DBLL-45TI IS62WV5128DBLL-45TLI IS62WV5128DBLL-45QLI IS62WV5128DBLL-45T2I IS62WV5128DBLL-45T2LI IS62WV5128DBLL-45HI IS62WV5128DBLL-45HLI IS62WV5128DBLL-45BI IS62WV5128DBLL-45BLI Package TSOP, TYPE I (8 x 20 mm) TSOP, TYPE I, Lead-free (8 x 20 mm) SOP, Lead-free TSOP, TYPE II TSOP, TYPE II, Lead-free sTSOP, TYPE I (8 x 13.4 mm) sTSOP, TYPE I, Lead-free (8 x 13.4 mm) mini BGA (6mmx8mm) mini BGA (6mmx8mm), Lead-free Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 13 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL 14 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 15 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL 16 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012 17 08/12/2008 Package Outline 1. CONTROLLING DIMENSION : MM . 2. Reference document : JEDEC MO-207 NOTE : IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL 18 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. A 02/09/2012