GE BC546 Small signal transistors (npn) Datasheet

BC546 THRU BC549
Small Signal Transistors (NPN)
TO-92
FEATURES
.142 (3.6)
min. .492 (12.5) .181 (4.6)
.181 (4.6)
♦ NPN Silicon Epitaxial Planar Transistors
♦ These transistors are subdivided into three groups
A, B and C according to their current gain. The type
BC546 is available in groups A and B, however, the types BC547 and BC548 can be
supplied in all three groups. The BC549 is a
low-noise type and available in groups B and
C. As complementary types, the PNP transistors BC556 … BC559 are recommended.
max. ∅ .022 (0.55)
♦ On special request, these transistors are also
.098 (2.5)
manufactured in the pin configuration TO-18.
E
C
MECHANICAL DATA
B
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
BC546
BC547
BC548, BC549
VCBO
VCBO
VCBO
80
50
30
V
V
V
Collector-Emitter Voltage
BC546
BC547
BC548, BC549
VCES
VCES
VCES
80
50
30
V
V
V
Collector-Emitter Voltage
BC546
BC547
BC548, BC549
VCEO
VCEO
VCEO
65
45
30
V
V
V
Emitter-Base Voltage
BC546, BC547
BC548, BC549
VEBO
VEBO
6
5
V
V
Collector Current
IC
100
mA
Peak Collector Current
ICM
200
mA
Peak Base Current
IBM
200
mA
Peak Emitter Current
–IEM
200
mA
Power Dissipation at Tamb = 25 °C
Ptot
5001)
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
1)
4/98
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
BC546 THRU BC549
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
–
–
–
1.6
3.2
6
–
–
–
220
330
600
2.7
4.5
8.7
18
30
60
–
–
–
4.5
8.5
15
30
60
110
–
–
–
kΩ
kΩ
kΩ
µS
µS
µS
hre
hre
hre
–
–
–
1.5 · 10–4
2 · 10–4
3 · 10–4
–
–
–
–
–
–
hFE
hFE
hFE
–
–
–
90
150
270
–
–
–
–
–
–
hFE
hFE
hFE
110
200
420
180
290
500
220
450
800
–
–
–
hFE
hFE
hFE
–
–
–
120
200
400
–
–
–
–
–
–
Thermal Resistance Junction to Ambient Air
RthJA
–
–
2501)
K/W
Collector Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
VCEsat
VCEsat
–
–
80
200
200
600
mV
mV
Base Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
VBEsat
VBEsat
–
–
700
900
–
–
mV
mV
Base-Emitter Voltage
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 10 mA
VBE
VBE
580
–
660
–
700
720
mV
mV
BC546
BC547
ICES
ICES
–
–
0.2
0.2
15
15
nA
nA
BC548, BC549
ICES
–
0.2
15
nA
BC546
BC547
ICES
ICES
–
–
–
–
4
4
µA
µA
h-Parameters at VCE = 5 V, IC = 2 mA,
f = 1 kHz,
Small Signal Current Gain
Current Gain Group A
B
C
Current Gain Group A
Input Impedance
B
C
Output Admittance Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
DC Current Gain
at VCE = 5 V, IC = 10µA
Current Gain Group A
B
C
at VCE = 5 V, IC = 2 mA
Current Gain Group A
B
C
at VCE = 5 V, IC = 100 mA
Current Gain Group A
B
C
Collector-Emitter Cutoff Current
at VCE = 80 V
at VCE = 50 V
at VCE = 30 V
at VCE = 80 V, Tj = 125 °C
at VCE = 50 V, Tj = 125 °C
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
BC546 THRU BC549
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
ICES
–
–
4
4
µA
µA
Gain-Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
–
300
–
MHz
Collector-Base Capacitance
at VCB = 10 V, f = 1 MHz
CCBO
–
3.5
6
pF
Emitter-Base Capacitance
at VEB = 0.5 V, f = 1 MHz
CEBO
–
9
–
pF
F
–
2
10
dB
BC548
BC549
F
–
1.2
4
dB
BC549
F
–
1.4
4
dB
at VCE = 30 V, Tj = 125 °C
BC548, BC549
Noise Figure
at VCE = 5 V, IC = 200 µA, RG = 2 kΩ,
f = 1 kHz, ∆f = 200 Hz
BC546, BC547
at VCE = 5 V, IC = 200 µA, RG = 2 kΩ,
f = 30…15000 Hz
RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549
RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549
RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549
RATINGS AND CHARACTERISTIC CURVES BC546 THRU BC549
Similar pages