EFM301 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION EFM306 SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 3.0 Amperes FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.24 gram DO-214AB MECHANICAL DATA 0.125 (3.17) 0.115 (2.92) * Epoxy : Device has UL flammability classification 94V-0 0.245 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.008 (0.203) 0.004 (0.102) Ratings at 25 o C ambient temperature unless otherwise specified. 0.320 (8.13) 0.305 (7.75) Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) SYMBOL EFM301 EFM302 EFM303 EFM304 EFM305 EFM306 UNITS Maximum Recurrent Peak Reverse Voltage RATINGS VRRM 50 100 150 200 300 400 Volts Maximum RMS Volts VRMS 35 70 105 140 210 280 Volts VDC 50 100 150 200 300 400 Volts Maximum DC Blocking Voltage Maximum Average Forward Current at T A = 55 oC IO Peak Forward Surge Current I FM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) 3.0 125 I FSM CJ Operating and Storage Temperature Range Amps 50 T J , T STG Amps 30 pF 0 -65 to + 175 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 3.0A DC SYMBOL VF Maximum DC Reverse Current @T A = 25 o C at Rated DC Blocking Voltage @T A =150 o C Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. IR EFM301 EFM302 EFM303 0.95 EFM304 EFM305 EFM306 1.25 UNITS Volts 5.0 uAmps 50 trr 35 nSec 2001-5 FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr +0.5A (-) OSCILLOSCOPE (NOTE 1) (+) -1.0A 1cm NOTES:1 Rise Time = 7ns max. Input Impedance = SET TIME BASE FOR 10 ns/cm 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 1.0 TJ = 25 .1 FM 30 4 10 01 ~E 1.0 TJ = 25 .1 Pulse Width = 300uS 1% Duty Cycle .01 .001 .01 0 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) JUNCTION CAPACITANCE, (pF) 175 150 8.3ms Single Half Sine-Wave (JEDEC Method) 125 100 75 50 25 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, (A) 0 25 50 75 100 125 150175 AMBIENT TEMPERATURE ( EF TJ = 100 0 M3 10 1.0 EF INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) TJ = 150 2.0 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 100 3.0 6 1 NONINDUCTIVE -0.25A Single Phase Half Wave 60Hz Resistive or Inductive Load 4.0 30 PULSE GENERATOR (NOTE 2) 5.0 FM 25 Vdc (approx) (-) 0 6.0 ~E D.U.T (+) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 05 10 NONINDUCTIVE M3 50 NONINDUCTIVE AVERAGE FORWARD CURENT, (A) RATING AND CHARACTERISTIC CURVES ( EFM301 THRU EFM306 ) 200 100 60 40 EFM 301 20 EFM ~EF 305 10 ~EF TJ = 25 6 4 M30 4 M30 6 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) RECTRON )