BCR20AM-12LA Triac Medium Power Use REJ03G0299-0300 Rev.3.00 Nov 30, 2007 Features • IT (RMS) : 20 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4 3 1 12 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 3 Applications Vacuum cleaner, electric heater, light dimmer, copying machine, and controller for other motor and heater Maximum Ratings Parameter Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 REJ03G0299-0300 Page 1 of 6 Rev.3.00 Nov 30, 2007 VDRM VDSM Voltage class 12 600 720 Unit V V BCR20AM-12LA Parameter Ratings Unit RMS on-state current Symbo l IT (RMS) 20 A Commercial frequency, sine full wave Note3 360° conduction, Tc = 109°C Surge on-state current ITSM 200 A 60Hz sinewave 1 full cycle, peak value, non-repetitive I2 t 167 A2s PGM PG (AV) VGM IGM Tj Tstg — 5 0.5 10 2 – 40 to +125 – 40 to +125 2.0 W W V A °C °C g Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.5 Unit mA V I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 30 A, Instantaneous measurement Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 30Note6 30Note6 30Note6 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD Rth (j-c) 0.2 — — — — 0.8 V °C/W Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Note4 (dv/dt)c 10 — — V/µs Tj = 125°C Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. 3. 4. 5. 6. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured at the T2 tab 1.5 mm away from the molded case. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = –10 A/ms 3. Peak off-state voltage VD = 400 V REJ03G0299-0300 Page 2 of 6 Rev.3.00 Nov 30, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR20AM-12LA Performance Curves 103 7 5 3 2 Rated Surge On-State Current 240 2 10 7 5 3 2 Tj = 125°C 101 7 5 3 2 Tj = 25°C Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 0 80 40 2 3 5 7 10 1 2 3 5 7 10 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V 1 10 7 5 3 VGT = 1.5V 2 PGM = 5W PG(AV) = 0.5W IGM = 2A 0 10 7 5 3 2 IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 2 10 7 5 3 2 101 7 5 3 2 0 10 7 5 3 2 Typical Example IFGT I IRGT I IRGT III 10–1 –60 –40–20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 3 10 7 5 Typical Example 3 2 102 7 5 3 2 1 10 –60 –40–20 0 20 40 60 80 100 120 140 Junction Temperature (°C) REJ03G0299-0300 Page 3 of 6 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Conduction Time (Cycles at 60Hz) Rev.3.00 Nov 30, 2007 Transient Thermal Impedance (°C/W) Gate Voltage (V) 120 On-State Voltage (V) 2 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 160 0 0 10 10 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 10 7 5 3 2 200 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 –1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 Conduction Time (Cycles at 60Hz) BCR20AM-12LA Allowable Case Temperature vs. RMS On-State Current 40 30 360° Conduction Resistive, inductive loads 20 10 120 100 80 60 40 360° Conduction inductive loads 5 10 15 20 25 0 0 30 5 10 15 20 25 30 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current All fins are black painted aluminum and greased Natural convection 140 120 160 × 160 × t2.3 100 100 × 100 × t2.3 80 60 × 60 × t2.3 60 40 20 0 0 5 10 15 20 25 160 Ambient Temperature (°C) 160 Ambient Temperature (°C) Curves apply regardless of conduction angle 140 20 Resistive, 0 0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 160 140 120 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 100 80 60 40 20 0 0 30 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 105 7 5 3 2 Typical Example 104 7 5 3 2 3 10 7 5 3 2 2 10 –60 –40–20 0 20 40 60 80 100 120 140 REJ03G0299-0300 Page 4 of 6 Junction Temperature (°C) Rev.3.00 Nov 30, 2007 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 103 7 5 Typical Example 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 Junction Temperature (°C) 103 7 5 3 2 Distribution T2+, G– Typical Example 102 7 5 3 2 1 10 7 5 3 T2+, G+ 2 T –, G– Typical Example 2 100 –60 –40–20 0 20 40 60 80 100 120 140 Breakover Voltage vs. Junction Temperature 160 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Commutation Characteristics 140 Typical Example Tj = 125°C 120 100 III Quadrant 80 60 40 I Quadrant 20 0 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 102 Typical Example 7 Tj = 125°C 5 I = 4A T 3 τ = 500µs 2 VD = 200V Gate Trigger Current vs. Gate Current Pulse Width Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time f = 3Hz 101 7 5 3 2 100 7 3 Rate of Rise of Off-State Voltage (V/µs) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Typical Example 140 Junction Temperature (°C) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Latching Current (mA) Latching Current vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) BCR20AM-12LA III Quadrant Minimum Characteristics Value I Quadrant 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Characteristics Test Circuits 3 10 7 5 3 2 IFGT I 6Ω 6Ω Typical Example IRGT I IRGT III A 6V V 102 7 5 Test Procedure I 6Ω 3 2 A 6V 101 0 10 2 3 5 7 10 1 2 3 5 7 10 Gate Current Pulse Width (µs) REJ03G0299-0300 Page 5 of 6 Rev.3.00 Nov 30, 2007 2 V A 6V 330Ω 330Ω Test Procedure III V 330Ω Test Procedure II BCR20AM-12LA Package Dimensions Package Name TO-220 JEITA Package Code SC-46 Previous Code RENESAS Code PRSS0004AA-A MASS[Typ.] 2.0g 10.5Max Unit: mm 4.5 φ3.6 3.8Max 12.5Min 16Max 7.0 3.2 1.3 1.0 0.8 0.5 2.54 2.6 4.5Max 2.54 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. REJ03G0299-0300 Page 6 of 6 Rev.3.00 Nov 30, 2007 Standard order code example BCR20AM-12LA BCR20AM-12LA-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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