DSEP 8-06B HiPerFREDTM Epitaxial Diode IFAV = 10 A VRRM = 600 V trr = 30 ns with soft recovery Preliminary Data VRSM VRRM V V 600 600 Type A C TO-220 AC C DSEP 8-06B A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 125°C; rectangular, d = 0.5 35 10 A A Features IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 50 A EAS TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH 0.1 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A -55...+175 175 -55...+150 °C °C °C 60 W ● ● ● ● ● TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical 0.4...0.6 2 Nm g ● ● Applications ● ● ● Symbol IR ① VF ② Conditions Characteristic Values typ. max. 60 0.25 µA mA IF = 10 A; 1.66 2.66 V V 2.5 0.5 K/W K/W 30 ns TVJ = 150°C TVJ = 25°C RthJC RthCH trr IRM ● ● TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs TVJ = 100°C ● ● ● A ● ● Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 ms, Duty Cycle < 2.0 % Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● 2.4 International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see outlines.pdf IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved 230 Data according to IEC 60747 and per diode unless otherwise specified 1-1