ATMEL AT24C01BN-SP25-B Two-wire automotive temperature serial eeprom Datasheet

1. Features
• Medium-voltage and Standard-voltage Operation
– 2.5 (VCC = 2.5V to 5.5V)
Automotive Temperature Range –40°C to 125°C
Internally Organized 128 x 8 (1K), 256 x 8 (2K), 512 x 8 (4K) or 1024 x 8 (8K)
Two-wire Serial Interface
Schmitt Trigger, Filtered Inputs for Noise Suppression
Bidirectional Data Transfer Protocol
400 kHz (2.5V) Compatibility
Write Protect Pin for Hardware Data Protection
8-byte Page (1K, 2K) or 16-byte Page (4K, 8K) Write Modes
Partial Page Writes are Allowed
Self-timed Write Cycle (5 ms max)
High-reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 100 Years
• 8-lead JEDEC SOIC and 8-lead TSSOP Packages
•
•
•
•
•
•
•
•
•
•
•
Two-wire
Automotive
Temperature
Serial EEPROM
1K (128 x 8)
2. Description
2K (256 x 8)
The AT24C01B/02B/04B/08B provides 1024/2048/4096/8192 bits of serial electrically
erasable and programmable read-only memory (EEPROM) organized as
128/256/512/1024 words of 8 bits each. The device is optimized for use in many automotive applications where low-power and low-voltage operation are essential. The
AT24C01B/02B/04B/08B is available in space-saving 8-lead JEDEC SOIC and 8-lead
TSSOP packages and is accessed via a two-wire serial interface. In addition, the
entire family is available in 2.5V (2.5V to 5.5V) versions.
4K (512 x 8)
8-lead SOIC
Table 2-1.
Pin Configurations
Pin Name
Function
A0 − A2
Address Inputs
SDA
Serial Data
SCL
Serial Clock Input
WP
Write Protect
A0
A1
A2
GND
1
2
3
4
8
7
6
5
VCC
WP
SCL
SDA
8K (1024 x 8)
AT24C01B
AT24C02B
AT24C04B
AT24C08B
8-lead TSSOP
A0
A1
A2
GND
1
2
3
4
8
7
6
5
VCC
WP
SCL
SDA
8517C–SEEPR–01/09
3. Absolute Maximum Ratings
*NOTICE:
Operating Temperature...........................−55°C to +125°C
Storage Temperature..............................−65°C to +150°C
Voltage on Any Pin
with Respect to Ground..................................−1.0V to +7.0V
Maximum Operating Voltage..........................................6.25V
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
DC Output Current........................................................5.0 mA
Figure 3-1.
Block Diagram
VCC
GND
WP
START
STOP
LOGIC
SERIAL
CONTROL
LOGIC
LOAD
DEVICE
ADDRESS
COMPARATOR
A2
A1
A0
R/W
EN
H.V. PUMP/TIMING
COMP
LOAD
DATA RECOVERY
INC
DATA WORD
ADDR/COUNTER
Y DEC
X DEC
SCL
SDA
EEPROM
SERIAL MUX
DOUT/ACK
LOGIC
DIN
DOUT
2
AT24C01B/02B/04B/08B
8517C–SEEPR–01/09
AT24C01B/02B/04B/08B
4. Pin Description
SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each EEPROM
device and negative edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bi-directional for serial data transfer. This pin is opendrain driven and may be wire-ORed with any number of other open-drain or open-collector
devices.
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1 and A0 pins are device address inputs
that are hard wired for the AT24C01B/02B/04B. As many as eight 1K/2K devices may be
addressed on a single bus system (device addressing is discussed in detail under the Device
Addressing section). The AT24C04B uses the A2 and A1 inputs for hardwire addressing and a
total of four 4K devices may be addressed on a single bus system. The A0 pin is a no connect.
The AT24C08B only uses the A2 input for hardwire addressing and a total of two 8K devices
may be addressed on a single bus system. The A0 and A1 pins are no connect.
WRITE PROTECT (WP): The AT24C01B/02B/04B/08B has a Write Protect pin that provides
hardware data protection. The Write Protect pin allows normal read/write operations when connected to ground (GND). When the Write Protect pin is connected to VCC, the write protection
feature is enabled and operates as shown in the following table.
Table 4-1.
WP Pin
Status
Write Protect
Part of the Array Protected
AT24C01B/02B/04B/08B
At VCC
Full Array
At GND
Normal Read/Write Operations
5. Memory Organization
AT24C01B, 1K SERIAL EEPROM: Internally organized with 16 pages of 8 bytes each, the 1K
requires a 7-bit data word address for random word addressing.
AT24C02B, 2K SERIAL EEPROM: Internally organized with 32 pages of 8 bytes each, the 2K
requires an 8-bit data word address for random word addressing.
AT24C04B, 4K SERIAL EEPROM: Internally organized with 32 pages of 16 bytes each, the 4K
requires a 9-bit data word address for random word addressing.
AT24C08B, 8K SERIAL EEPROM: Internally organized with 64 pages of 16 bytes each, the 8K
requires a 10-bit data word address for random word addressing.
3
8517C–SEEPR–01/09
Table 5-1.
Pin Capacitance(1)
Applicable over recommended operating range from TA = 25°C, f = 400 KHz, VCC = +2.5V
Symbol
Test Condition
CI/O
CIN
Note:
Max
Units
Conditions
Input/Output Capacitance (SDA)
8
pF
VI/O = 0V
Input Capacitance (A0, A1, A2, SCL)
6
pF
VIN = 0V
1. This parameter is characterized and is not 100% tested.
Table 5-2.
DC Characteristics
Applicable over recommended operating range from: TA = −40°C to +125°C, VCC = +2.5V to +5.5V (unless otherwise noted)
Symbol
Parameter
Max
Units
VCC1
Supply Voltage
5.5
V
ICC
Supply Current VCC = 5.0V
Read at 100 kHz
0.4
1.0
mA
ICC
Supply Current VCC = 5.0V
Write at 100 kHz
2.0
3.0
mA
ISB1
Standby Current VCC = 2.5V
VIN = VCC or VSS
1.6
4.0
µA
ISB2
Standby Current VCC = 5.0V
VIN = VCC or VSS
8.0
18.0
µA
ILI
Input Leakage Current
VIN = VCC or VSS
0.10
3.0
µA
ILO
Output Leakage Current
VOUT = VCC or VSS
0.05
3.0
µA
−0.6
VCC x 0.3
V
VCC x 0.7
VCC + 0.5
V
0.4
V
Input Low Level
VIL
Test Condition
(1)
(1)
Input High Level
VOL
Output Low Level VCC = 2.5V
4
Typ
2.5
VIH
Note:
Min
IOL = 3.0 mA
1. VIL min and VIH max are reference only and are not tested.
AT24C01B/02B/04B/08B
8517C–SEEPR–01/09
AT24C01B/02B/04B/08B
Table 5-3.
AC Characteristics
Applicable over recommended operating range from TA = −40°C to +125°C, VCC = +2.5V to +5.5V, CL = 1 TTL Gate and
100 pF (unless otherwise noted)
Symbol
Parameter
fSCL
Clock Frequency, SCL
tLOW
Clock Pulse Width Low
tHIGH
Clock Pulse Width High
Min
Max
Units
400
kHz
1.2
µs
0.6
µs
(1)
tI
Noise Suppression Time
tAA
Clock Low to Data Out Valid
0.1
tBUF
Time the bus must be free before
a new transmission can start(2)
1.2
µs
tHD.STA
Start Hold Time
0.6
µs
tSU.STA
Start Set-up Time
0.6
µs
tHD.DAT
Data In Hold Time
0
µs
tSU.DAT
Data In Set-up Time
100
ns
(2)
50
ns
0.9
µs
tR
Inputs Rise Time
300
ns
tF
Inputs Fall Time(2)
300
ns
tSU.STO
Stop Set-up Time
0.6
µs
tDH
Data Out Hold Time
50
ns
tWR
Write Cycle Time
Endurance(2)
5.0V, 25°C, Page Mode
Notes:
5
1M
ms
Write Cycles
1. This parameter is characterized and is not 100% tested (TA = 25°C).
2. This parameter is characterized only.
5
8517C–SEEPR–01/09
6. Device Operation
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external device.
Data on the SDA pin may change only during SCL low time periods (see Figure 8-2 on page 8).
Data changes during SCL high periods will indicate a start or stop condition as defined below.
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which
must precede any other command (see Figure 8-3 on page 8).
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a
read sequence, the stop command will place the EEPROM in a standby power mode (see Figure 8-3 on page 8).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the
EEPROM in 8-bit words. The EEPROM sends a “0” to acknowledge that it has received each
word. This happens during the ninth clock cycle.
STANDBY MODE: The AT24C01B/02B/04B/08B features a low-power standby mode which is
enabled: (a) upon power-up and (b) after the receipt of the STOP bit and the completion of any
internal operations.
2-WIRE SOFTWARE RESET: After an interruption in protocol, power loss or system reset, any
2-wire part can be protocol reset by following these steps: (a) Create a start bit condition, (b)
clock 9 cycles, (c) create another start but followed by stop bit condition as shown below. The
device is ready for next communication after above steps have been completed.
Figure 6-1.
Software Reset
Dummy Clock Cycles
Start bit
SCL
1
2
3
Start bit
8
Stop bit
9
SDA
6
AT24C01B/02B/04B/08B
8517C–SEEPR–01/09
AT24C01B/02B/04B/08B
7. Bus Timing
Figure 7-1.
SCL: Serial Clock, SDA: Serial Data I/O
tHIGH
tF
tR
tLOW
SCL
tSU.STA
tLOW
tHD.STA
tHD.DAT
tSU.DAT
tSU.STO
SDA IN
tAA
tDH
tBUF
SDA OUT
8. Write Cycle Timing
Figure 8-1.
SCL: Serial Clock, SDA: Serial Data I/O
SCL
SDA
8th BIT
ACK
WORDn
(1)
twr
STOP
CONDITION
Note:
START
CONDITION
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
7
8517C–SEEPR–01/09
Figure 8-2.
Data Validity
SDA
SCL
DATA STABLE
DATA STABLE
DATA
CHANGE
Figure 8-3.
Start and Stop Definition
SDA
SCL
START
Figure 8-4.
STOP
Output Acknowledge
1
SCL
8
9
DATA IN
DATA OUT
START
8
ACKNOWLEDGE
AT24C01B/02B/04B/08B
8517C–SEEPR–01/09
AT24C01B/02B/04B/08B
9. Device Addressing
The 1K/2K/4K/8K EEPROM device requires an 8-bit device address word following a start condition to enable the chip for a read or write operation (see Figure 11-1 on page 10).
The device address word consists of a mandatory “1”, “0” sequence for the first four most significant bits as shown. This is common to all the Serial EEPROM devices.
The next 3 bits are the A2, A1 and A0 device address bits for the 1K/2K EEPROM. These 3 bits
must compare to their corresponding hardwired input pins.
The 4K EEPROM only uses the A2 and A1 device address bits with the A0 bit being a memory
address bit (P0) (see Figure 11-1 on page 10). The two device address bits must compare to
their corresponding hardwired input pins. The A0 pin is no connect.
The 8K EEPROM only uses the A2 device address bit with the next two bits (P9, P0) being for
memory page addressing (See Figure 11-1 on page 10). The A2 bit must compare to its corresponding hardwired input pin. The A1 and A0 pins are no connect.
The eighth bit of the device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a “0”. If a compare is not made,
the chip will return to a standby state.
10. Write Operations
BYTE WRITE: A write operation requires an 8-bit data word address following the device
address word and acknowledgment. Upon receipt of this address, the EEPROM will again
respond with a “0” and then clock in the first 8-bit data word. Following receipt of the 8-bit data
word, the EEPROM will output a “0” and the addressing device, such as a microcontroller, must
terminate the write sequence with a stop condition. At this time the EEPROM enters an internally
timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during this write cycle
and the EEPROM will not respond until the write is complete (see Figure 11-2 on page 11).
PAGE WRITE: The 1K/2K EEPROM is capable of an 8-byte page write. The 4K/8K devices are
capable of 16-byte page writes.
A page write is initiated the same as a byte write, but the microcontroller does not send a stop
condition after the first data word is clocked in. Instead, after the EEPROM acknowledges
receipt of the first data word, the microcontroller can transmit up to seven (1K/2K) or fifteen (4K/
8K) more data words. The EEPROM will respond with a “0” after each data word received. The
microcontroller must terminate the page write sequence with a stop condition (see Figure 11-3
on page 11).
The data word address lower three (1K/2K) or four (4K/8K) bits are internally incremented following the receipt of each data word. The higher data word address bits are not incremented,
retaining the memory page row location. When the word address, internally generated, reaches
the page boundary, the following byte is placed at the beginning of the same page. If more than
eight (1K/2K) or sixteen (4K/8K) data words are transmitted to the EEPROM, the data word
address will “roll over” and previous data will be overwritten.
ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
9
8517C–SEEPR–01/09
operation desired. Only if the internal write cycle has completed will the EEPROM respond with
a “0”, allowing the read or write sequence to continue.
11. Read Operations
Read operations are initiated the same way as write operations with the exception that the
read/write select bit in the device address word is set to “1”. There are three read operations:
current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last
address accessed during the last read or write operation, incremented by one. This address
stays valid between operations as long as the chip power is maintained. The address “roll over”
during read is from the last byte of the last memory page to the first byte of the first page. The
address “roll over” during write is from the last byte of the current page to the first byte of the
same page.
Once the device address with the read/write select bit set to “1” is clocked in and acknowledged
by the EEPROM, the current address data word is serially clocked out. The microcontroller does
not respond with an input “0” but does generate a following stop condition (see Figure 11-4 on
page 11).
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data
word address. Once the device address word and data word address are clocked in and
acknowledged by the EEPROM, the microcontroller must generate another start condition. The
microcontroller now initiates a current address read by sending a device address with the
read/write select bit high. The EEPROM acknowledges the device address and serially clocks
out the data word. The microcontroller does not respond with a “0” but does generate a following
stop condition (see Figure 11-5 on page 11).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment
the data word address and serially clock out sequential data words. When the memory address
limit is reached, the data word address will “roll over” and the sequential read will continue. The
sequential read operation is terminated when the microcontroller does not respond with a “0” but
does generate a following stop condition (see Figure 11-6 on page 12).
Figure 11-1. Device Address
1K/2K
10
1 0
MSB
1
0
A2 A1 A0 R/W
4K
1
0
1
0
A2 A1 P0 R/W
8K
1
0
1
0
A2 P1 P0 R/W
AT24C01B/02B/04B/08B
8517C–SEEPR–01/09
AT24C01B/02B/04B/08B
Figure 11-2. Byte Write
(* = DON’T CARE bit for 1K)
Figure 11-3. Page Write
(* = DON’T CARE bit for 1K)
Figure 11-4. Current Address Read
Figure 11-5. Random Read
( = Don’t care bit for 1K)
11
8517C–SEEPR–01/09
Figure 11-6. Sequential Read
12
AT24C01B/02B/04B/08B
8517C–SEEPR–01/09
AT24C01B/02B/04B/08B
12. AT24C01B Ordering Information
Ordering Code
Package
Operation Range
8S1
8S1
8A2
8A2
Lead-free/Halogen-free/NiPdAu Lead
Finish/Automotive Temperature
(−40°C to 125°C)
AT24C01BN-SP25-B(1)
AT24C01BN-SP25-T(2)
AT24C01B-TP25-B(1)
AT24C01B-TP25-T(2)
Notes:
1. “-B” denotes bulk.
2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP = 5K per reel.
Package Type
8S1
8-lead, 0.150” Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
Options
−2.5
Low-voltage (2.5V to 5.5V)
13
8517C–SEEPR–01/09
13. AT24C02B Ordering Information
Ordering Code
Package
Operation Range
8S1
8S1
8A2
8A2
Lead-free/Halogen-free/NiPdAu Lead
Finish/Automotive Temperature
(−40°C to 125°C)
AT24C02BN-SP25-B(1)
AT24C02BN-SP25-T(2)
AT24C02B-TP25-B(1)
AT24C02B-TP25-T(2)
Notes:
1. “-B” denotes bulk.
2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP = 5K per reel.
Package Type
8S1
8-lead, 0.150” Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
Options
−2.5
14
Low-voltage (2.5V to 5.5V)
AT24C01B/02B/04B/08B
8517C–SEEPR–01/09
AT24C01B/02B/04B/08B
14. AT24C04B Ordering Information
Ordering Code
Package
Operation Range
8S1
8S1
8A2
8A2
Lead-free/Halogen-free/NiPdAu Lead
Finish/Automotive Temperature
(−40°C to 125°C)
AT24C04BN-SP25-B(1)
AT24C04BN-SP25-T(2)
AT24C04B-TP25-B(1)
AT24C04B-TP25-T(2)
Notes:
1. “-B” denotes bulk.
2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP = 5K per reel.
Package Type
8S1
8-lead, 0.150” Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
Options
−2.5
Low-voltage (2.5V to 5.5V)
15
8517C–SEEPR–01/09
15. AT24C08B Ordering Information
Ordering Code
Package
Operation Range
8S1
8S1
8A2
8A2
Lead-free/Halogen-free/NiPdAu Lead
Finish/Automotive Temperature
(−40°C to 125°C)
AT24C08BN-SP25-B(1)
AT24C08BN-SP25-T(2)
AT24C08B-TP25-B(1)
AT24C08B-TP25-T(2)
Notes:
1. “-B” denotes bulk.
2. “-T” denotes tape and reel. SOIC = 4K per reel. TSSOP = 5K per reel.
Package Type
8S1
8-lead, 0.150” Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8A2
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
Options
−2.5
16
Low-voltage (2.5V to 5.5V)
AT24C01B/02B/04B/08B
8517C–SEEPR–01/09
AT24C01B/02B/04B/08B
16. Packaging Information
16.1
8A2 – TSSOP
3
2 1
Pin 1 indicator
this corner
E1
E
L1
N
L
Top View
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
A
b
D
MIN
NOM
MAX
NOTE
2.90
3.00
3.10
2, 5
3, 5
E
e
D
A2
6.40 BSC
E1
4.30
4.40
4.50
A
–
–
1.20
A2
0.80
1.00
1.05
b
0.19
–
0.30
e
Side View
L
0.65 BSC
0.45
L1
Notes:
4
0.60
0.75
1.00 REF
1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
5/30/02
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
DRAWING NO.
8A2
REV.
B
17
8517C–SEEPR–01/09
16.2
8S1 – JEDEC SOIC
C
1
E
E1
L
N
∅
Top View
End View
e
B
COMMON DIMENSIONS
(Unit of Measure = mm)
A
SYMBOL
A1
D
Side View
MIN
NOM
MAX
A
1.35
–
1.75
A1
0.10
–
0.25
b
0.31
–
0.51
C
0.17
–
0.25
D
4.80
–
5.00
E1
3.81
–
3.99
E
5.79
–
6.20
e
NOTE
1.27 BSC
L
0.40
–
1.27
∅
0˚
–
8˚
Note: These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
10/7/03
R
18
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
TITLE
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)
DRAWING NO.
8S1
REV.
B
AT24C01B/02B/04B/08B
8517C–SEEPR–01/09
AT24C01B/02B/04B/08B
17. Revision History
Doc. Rev.
Date
Comments
8517C
1/2009
Removed Preliminary status.
8517B
3/2008
Added data for 8K device.
8517A
1/2008
Initial document release.
19
8517C–SEEPR–01/09
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