ECH8612 Ordering number : EN8258A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8612 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Best suited for load switches. 1.8V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±8 V ID 7 A Drain Current (DC) Drain Current (Pulse) V IDP PD PW≤10µs, duty cycle≤1% 40 A Mounted on a ceramic board (900mm2✕0.8mm) 1unit 1.3 W PT Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ Unit max ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±6.4V, VDS=0V 20 VDS=10V, ID=1mA VDS=10V, ID=3.5A 0.4 Forward Transfer Admittance VGS(off) yfs RDS(on)1 RDS(on)2 ID=3A, VGS=4.5V ID=1.5A, VGS=2.5V 18 24 mΩ Static Drain-to-Source On-State Resistance 25 36 mΩ ID=0.5A, VGS=1.8V VDS=10V, f=1MHz 35 52 mΩ Input Capacitance RDS(on)3 Ciss Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS Conditions IDSS IGSS Output Capacitance Coss Reverse Transfer Capacitance Crss Marking : FE VDS=10V, f=1MHz VDS=10V, f=1MHz 6.6 V 1 µA ±10 µA 1.2 11 V S 920 pF 150 pF 120 pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70306 / 52506 MS IM TB-00002337 / 32505PE TS IM TB-00000442 No.8258-1/4 ECH8612 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 14 ns Rise Time tr td(off) See specified Test Circuit. 170 ns See specified Test Circuit. 100 ns tf See specified Test Circuit. 98 ns Qg VDS=10V, VGS=4.5V, ID=7A 12 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4.5V, ID=7A VDS=10V, VGS=4.5V, ID=7A 1.3 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=7A, VGS=0V Turn-OFF Delay Time Fall Time Total Gate Charge Package Dimensions unit : mm 7011A-001 3.7 0.83 8 7 6 5 0.25 2.9 0.15 5 2.3 2.8 0 to 0.02 4 0.65 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view 0.3 0.9 0.25 1 1 V Electrical Connection Top View 8 nC 1.2 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Bottom View Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=3.5A RL=2.86Ω VIN D VOUT PW=10µs D.C.≤1% G ECH8612 P.G 50Ω S No.8258-2/4 ECH8612 ID -- VDS V 4 3 2 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 2 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 3.0A 1.5A 30 20 10 1 2 3 4 5 6 Gate-to-Source Voltage, VGS -- V 7 1.2 1.4 1.6 1.8 IT09382 V 1.8 S= 40 , VG 0.5A I D= V =2.5 VGS , A 5 . I D=1 =4.5V A, V GS I D=3.0 30 20 10 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09384 IS -- VSD 10 VDS=10V 2 1.0 50 IT09383 yfs -- ID 3 0.8 RDS(on) -- Ta 0 --60 0 0 0.6 60 50 40 0.4 Gate-to-Source Voltage, VGS -- V Ta=25°C ID=0.5A 0.2 IT09381 RDS(on) -- VGS 60 VGS=0V 7 5 10 1.0 7 5 25 3 °C 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 5 3 0.1 0.4 7 5 2 td(off) 100 tf 7 5 3 tr 2 td(on) 0.7 0.8 0.9 1.0 1.1 IT09386 f=1MHz 2 Ciss, Coss, Crss -- pF 3 0.6 Ciss, Coss, Crss -- VDS 3 VDD=10V VGS=4.5V 7 0.5 Diode Forward Voltage, VSD -- V IT09385 SW Time -- ID 1000 10 7 0.01 7 2 2 0.1 0.01 1.0 C C 5° --2 = °C Ta 75 --25° 2 2 25°C 3 3 5° C Source Current, IS -- A 7 5 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 3 0 0 Forward Transfer Admittance, yfs -- S 4 1 VGS=1.0V 0 Switching Time, SW Time -- ns 5 Ta=7 5°C Drain Current, ID -- A 6 2.0 V 6.0V Drain Current, ID -- A VDS=10V 1.5 6 5 ID -- VGS 7 25°C --25°C 1.8 V 4.5V 2.5V 7 Ciss 1000 7 5 3 2 Coss Crss 100 7 5 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT09387 0 5 10 15 20 Drain-to-Source Voltage, VDS -- V IT09388 No.8258-3/4 ECH8612 VGS -- Qg 100 7 5 3 2 VDS=10V ID=7A 4.0 3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 Total Gate Charge, Qg -- nC IT09389 PD -- Ta 1.6 1m s 10 ID=7A ms 10 0m DC 1.0 7 5 3 2 0.1 7 5 3 2 <10µs s op era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT09390 Mounted on a ceramic board (900mm2✕0.8mm) 1.5 1.4 1.3 1.2 1.0 0.8 ip 1u iss D al t To ni at t n io Allowable Power Dissipation, PD -- W 12 10 7 5 3 2 ASO IDP=40A 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09391 Note on usage : Since the ECH8612 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2006. Specifications and information herein are subject to change without notice. PS No.8258-4/4