CEL NE68718-T1-A Npn epitaxial silicon rf transistor for high-frequency low-noise amplification 4-pin super minimold Datasheet

NPN SILICON RF TRANSISTOR
NE68718
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD
FEATURES
• Low Noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• 4-pin super minimold Package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
NE68718-A
50 pcs (Non reel)
• 8 mm wide embossed taping
NE68718-T1-A
3 kpcs/reel
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
5
V
Collector to Emitter Voltage
VCEO
3
V
Emitter to Base Voltage
VEBO
2
V
IC
30
mA
90
mW
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
Note Free air
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10516EJ01V0DS (1st edition)
(Previous No. P12109EJ2V0DS00)
Date Published August 2004 CP(K)
The mark  shows major revised points.
NE68718
ELECTRICAL CHARACTERISTICS (T A = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA


100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA


100
nA
Note 1
VCE = 2 V, IC = 20 mA
70

140

Gain Bandwidth Product (1)
fT
VCE = 2 V, IC = 20 mA, f = 2.0 GHz
10
13

GHz
Gain Bandwidth Product (2)
fT
DC Current Gain
hFE
RF Characteristics
Insertion Power Gain (1)
S21e
2
Insertion Power Gain (2)
S21e
2
VCE = 1 V, IC = 10 mA, f = 2.0 GHz
8.0
11

GHz
VCE = 2 V, IC = 20 mA, f = 2.0 GHz
8.0
11

dB
VCE = 1 V, IC = 10 mA, f = 2.0 GHz
7.5
9.0

dB
Noise Figure (1)
NF
VCE = 2 V, IC = 3 mA, f = 2.0 GHz

1.3
2.0
dB
Noise Figure (2)
NF
VCE = 1 V, IC = 3 mA, f = 2.0 GHz

1.3
2.0
dB
VCB = 2 V, IE = 0 mA, f = 1.0 MHz

0.3
0.6
pF
Reverse Transfer Capacitance
Cre
Note 2
Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
2
Rank
FB
Marking
T86
hFE Value
70 to 140
Data Sheet PU10516EJ01V0DS
NE68718
TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10516EJ01V0DS
3
NE68718
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
4
Data Sheet PU10516EJ01V0DS
NE68718
PACKAGE DIMENSIONS
4-PIN SUPER MINIMOLD (UNIT: mm)
Data Sheet PU10516EJ01V0DS
5