Features • • • • • • • Frequency Range 5 GHz to 6 GHz Pout 25 dBm at 5.8 GHz Gain Typically 30 dB Pin Typically 0 dBm VCC 2.7V to 3.8V Power Consumption in Power-down Mode Typically < 1 µA Package: QFN16 3 mm × 3 mm 5.8 GHz WDCT Power Amplifier Benefits • • • • Biasing Control Extends Battery Time Simple Input and Output Matching Only One Single Supply Required No High-side Switching Transistor Required ATR7040 1. Description 1.1 Process This 5-GHz power amplifier (PA) is designed using Atmel’s Silicon-Germanium (SiGe) process and provides high efficiency. 1.2 Circuitry The PA, ATR7040, consists of a three-stage amplifier with a typical output power of 25 dBm. The output stage was implemented using an open-collector structure. Power up, power down, and output level are controlled at bias control pin 6 (Vctl). 4868C–DECT–05/06 Figure 1-1. Block Diagram VCC1 7 VCC2 6 ATR7040 RFIN 10 Matching RFOUT/VCC3 2 RFOUT/VCC3 3 Matching Bias control 13 VCTL 2 14 GND PADDLE GND 15 VCC_CTL ATR7040 4868C–DECT–05/06 ATR7040 2. Pin Configuration Pinning QFN16 NC VCC_CTL GND VCTL Figure 2-1. 16 15 14 13 12 NC 1 2 ATR7040 11 NC 3 GND on the 10 RFIN 4 PADDLE 9 NC 5 6 7 8 NC VCC2 VCC1 NC NC RFOUT/VCC3 RFOUT/VCC3 NC Table 2-1. Pin Description Pin Symbol 1 NC 2 RFOUT RF output and supply voltage for output amplifier stage 3 RFOUT RF output and supply voltage for output amplifier stage 4 NC Not connected(1) 5 NC Not connected(1) 6 VCC2 Supply voltage for second amplifier stage 7 VCC1 Supply voltage for first amplifier stage 8 NC Not connected(1) 9 NC Not connected(1) 10 RFIN 11 NC Not connected(1) 12 NC Not connected(1) 13 VCTL Control voltage for power ramping 14 GND Ground 15 VCC_CTL 16 NC PADDLE – Note: Function Not connected(1) RF input Supply voltage for biasing control block Not connected(1) Ground 1. Pin can be connected to paddle for increased GND area 3 4868C–DECT–05/06 3. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage VCC 5 V Supply current Icc 400 mA Junction temperature Tj 150 °C Storage temperature TStg –40 to +125 °C Input RF power Pin 10 dBm Control voltage Vctl 2.5 V Symbol Value Unit RthJA 40 K/W Symbol Value Unit VCC 2.7 to 3.8 V Operating frequency range fin 5100 to 5900 MHz Ambient temperature range Tamb –25 to +75 °C Note: The part may not survive all maximums applied simultaneously. Electrostatic sensitive device. Observe precautions for handling. 4. Thermal Resistance Parameters Junction ambient package QFN16, 3 × 3, slug soldered on PCB 5. Operating Range Parameters Supply voltage 4 ATR7040 4868C–DECT–05/06 ATR7040 6. Electrical Characteristics Operating conditions: VCC = 3.6V, Vctl = 1.5V, input frequency = 5.8 GHz, input power 0 dBm, pulsed mode, duty cycle 10%, ton = 1 ms, Tamb = 25°C, unless otherwise specified. No. Parameters Test Conditions Pin Symbol Min. Typ. 1.0 Frequency range Depends on external circuitry 1.1 Supply voltage Vcc 1.2 Input power Pin 1.3 Saturated power output Psat 1.4 Output power deviation Pd –2 +2 dB 1.5 Control voltage range PA operating mode Vctl 1.0 1.7 V Power-down mode Vctl 0.2 V 1.6 Control input current PA on 5 1.7 Input return loss With external matching 10 –6 dB 1.8 Isolation Vctl ≤ 0.2V ISOr 1.9 Power added efficiency At power saturation, Pin = 0 dBm 1.10 Current consumption 1.11 1.12 5100 2.7 3.6 Max. Unit 5900 MHz 3.8 V 0 dBm 25 dBm 90 Ictl –7 33 µA 35 dB PAE 35 % For 25 dBm output power Icc 250 mA Current consumption in power-down mode Vctl ≤ 0.2V Icc 1 µA Duty cycle of operation At saturated output power 100 % 7. Application Circuit Figure 7-1. Application Circuit VCC C6 slug RFIN C1 8 7 6 5 9 4 TRL1 10 3 11 2 12 1 13 VCTL 14 15 L1 TRL2 C3 RFOUT C2 16 VCC 5 4868C–DECT–05/06 8. Diagrams Figure 8-1. Output Power, Efficiency and Supply Currents Versus Input Frequency Pin = 0 dBm, Vcc = 3.6V, Vctl = 1.4V 40 400 PAE (%) 350 Iges (mA) 300 30 250 Pout (dBm) 25 200 150 20 Iges (mA) Pout (dBm), PAE % 35 100 15 50 10 5600 5650 5700 5750 5800 5850 5900 5950 0 6000 Frequency (MHz) Figure 8-2. Output Power, Gain, Efficiency and Supply Currents Versus Input Power 400 30 350 300 20 Gain (dB) 250 10 200 PAE (%) 0 Iges (mA) Pout (dBm), Gain (dB), PAE (%) Freq = 5800 MHz, Vcc = 3.6V, Vctl = 1.4V 40 150 -10 100 Iges (mA) Pout (dBm) -20 50 -30 0 -20 -15 -10 -5 0 5 Pin (dBm) Figure 8-3. Output Power, Efficiency and Supply Currents Versus Operating Voltage Freq = 5800 MHz, Pin = 0 dBm, Vctl = 1.5V 40 450 400 35 350 30 300 Iges (mA) 250 25 200 Iges (mA) Pout (dBm), PAE (%) PAE (%) Pout (dBm) 20 150 100 15 50 10 0 2.5 3.0 3.5 4.0 Vcc (V) 6 ATR7040 4868C–DECT–05/06 ATR7040 9. Ordering Information Extended Type Number Package Remarks ATR7040-PVPG QFN16, 3 × 3 Taped and reeled, MOQ 2000, Pb-free ATR7040-PVQG QFN16, 3 × 3 Taped and reeled, MOQ 8000, Pb-free 10. Package Information Package: QFN 16 - 3x3 Exposed pad 1.7x1.7 (acc. JEDEC OUTLINE No. MO-220) Dimensions in mm Not indicated tolerances ±0.05 3 0.9±0.1 1.7 +0 0.05 -0.05 68 2. 12 1 9 4 8 0.25 4 16 5 15 1 13 technical drawings according to DIN specifications 0. 0.4±0.1 16 0.5 nom. Drawing-No.: 6.543-5115.01-4 Issue: 1; 07.03.05 1.5 Assembly Chip PAC 7 4868C–DECT–05/06 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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