BAS40−04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Low Forward Voltage http://onsemi.com 40 VOLTS SCHOTTKY BARRIER DIODES Features • Pb−Free Package is Available ANODE 1 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 40 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 1.8 mW mW/°C TJ, Tstg −55 to +150 °C IFM 120 mA IFSM 200 600 mA RJA 508 (Note 1) 311 (Note 2) °C/W Operating Junction and Storage Temperature Range Forward Continuous Current Single Forward Current t1s t 10 ms Thermal Resistance Junction−to−Ambient CATHODE 2 3 CATHODE/ANODE MARKING DIAGRAM 3 1 CB D 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 x 1.0 in pad. SOT−23 (TO−236AB) CASE 318 Style 11 CB D = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† BAS40−04LT1 SOT−23 3000/ Tape & Reel SOT−23 (Pb−Free) 3000/ Tape & Reel BAS40−04LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 March, 2004 − Rev. 8 1 Publication Order Number: BAS40−04LT1/D BAS40−04LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage Total Capacitance (IR = 10 A) (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Symbol Min Max Unit V(BR)R 40 − V CT − 5.0 pF IR − 1.0 Adc Forward Voltage (IF = 1.0 mAdc) VF − 380 mVdc Forward Voltage (IF = 10 mAdc) VF − 500 mVdc Forward Voltage (IF = 40 mAdc) VF − 1.0 Vdc http://onsemi.com 2 BAS40−04LT1 IR , REVERSE CURRENT (µA) 100 10 150°C 125 °C 1.0 85°C 25°C 0.1 −40 °C 0 0.1 TA = 150°C 125°C 10 85°C 1.0 0.1 25°C 0.01 0.2 0.3 −55 °C 0.4 0.5 0.6 0.7 0.001 0.8 0 5.0 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10 15 VR, REVERSE VOLTAGE (VOLTS) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5.0 20 Figure 2. Reverse Current versus Reverse Voltage 3.5 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 3 35 40 25 BAS40−04LT1 PACKAGE DIMENSIONS SOT−23 (TO−236AB) CASE 318−08 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09. A L 3 1 V B 2 S DIM A B C D G H J K L S V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches SOT−123 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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